Abstract
A method for significantly increasing the growth rates (GRs) of high-k oxide thin films grown via plasma-enhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O2 plasma oxidant was developed. This approach led to improvements of ∼60% in the saturation GRs of PE-ALD ZrO2, HfO2, and SiO2. Furthermore, despite the significantly higher GR enabled by PE-ALD, the mechanical and dielectric properties of the PE-ALD oxide films were similar or even superior to those of films grown via the conventional O2 plasma process. Optical emission spectroscopy analyses in conjunction with theoretical calculation of the electron energy distribution function revealed that adding Ar gas to the O2 plasma increased the density of high-energy electrons, thereby generating more O2 plasma species, such as ions and radicals, which played a key role in improving the GRs and the properties of the films. This promising approach is expected to facilitate the high-volume manufacturing of films via PE-ALD, especially for use as gate insulators in thin-film transistor-based devices in the display industry.
| Original language | English |
|---|---|
| Pages (from-to) | 40286-40293 |
| Number of pages | 8 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 10 |
| Issue number | 46 |
| DOIs | |
| Publication status | Published - 2018 Nov 21 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Effects of Ar Addition to O2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films. / Jung, Hanearl; Oh, Il Kwon; Yoon, Chang Mo; Park, Bo Eun; Lee, Sanghun; Kwon, Ohyung; Lee, Woo Jae; Kwon, Se Hun; Kim, Woo Hee; Kim, Hyungjun.
In: ACS Applied Materials and Interfaces, Vol. 10, No. 46, 21.11.2018, p. 40286-40293.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of Ar Addition to O2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films
AU - Jung, Hanearl
AU - Oh, Il Kwon
AU - Yoon, Chang Mo
AU - Park, Bo Eun
AU - Lee, Sanghun
AU - Kwon, Ohyung
AU - Lee, Woo Jae
AU - Kwon, Se Hun
AU - Kim, Woo Hee
AU - Kim, Hyungjun
PY - 2018/11/21
Y1 - 2018/11/21
N2 - A method for significantly increasing the growth rates (GRs) of high-k oxide thin films grown via plasma-enhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O2 plasma oxidant was developed. This approach led to improvements of ∼60% in the saturation GRs of PE-ALD ZrO2, HfO2, and SiO2. Furthermore, despite the significantly higher GR enabled by PE-ALD, the mechanical and dielectric properties of the PE-ALD oxide films were similar or even superior to those of films grown via the conventional O2 plasma process. Optical emission spectroscopy analyses in conjunction with theoretical calculation of the electron energy distribution function revealed that adding Ar gas to the O2 plasma increased the density of high-energy electrons, thereby generating more O2 plasma species, such as ions and radicals, which played a key role in improving the GRs and the properties of the films. This promising approach is expected to facilitate the high-volume manufacturing of films via PE-ALD, especially for use as gate insulators in thin-film transistor-based devices in the display industry.
AB - A method for significantly increasing the growth rates (GRs) of high-k oxide thin films grown via plasma-enhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O2 plasma oxidant was developed. This approach led to improvements of ∼60% in the saturation GRs of PE-ALD ZrO2, HfO2, and SiO2. Furthermore, despite the significantly higher GR enabled by PE-ALD, the mechanical and dielectric properties of the PE-ALD oxide films were similar or even superior to those of films grown via the conventional O2 plasma process. Optical emission spectroscopy analyses in conjunction with theoretical calculation of the electron energy distribution function revealed that adding Ar gas to the O2 plasma increased the density of high-energy electrons, thereby generating more O2 plasma species, such as ions and radicals, which played a key role in improving the GRs and the properties of the films. This promising approach is expected to facilitate the high-volume manufacturing of films via PE-ALD, especially for use as gate insulators in thin-film transistor-based devices in the display industry.
UR - http://www.scopus.com/inward/record.url?scp=85056470020&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85056470020&partnerID=8YFLogxK
U2 - 10.1021/acsami.8b14244
DO - 10.1021/acsami.8b14244
M3 - Article
C2 - 30358984
AN - SCOPUS:85056470020
VL - 10
SP - 40286
EP - 40293
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 46
ER -