Effects of Ar Addition to O2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films

Hanearl Jung; Il Kwon Oh; Chang Mo Yoon; Bo Eun Park; Sanghun Lee; Ohyung Kwon; Woo Jae Lee; Se Hun Kwon; Woo Hee Kim; Hyungjun Kim

doi:10.1021/acsami.8b14244

Effects of Ar Addition to O₂ Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films

Hanearl Jung, Il Kwon Oh, Chang Mo Yoon, Bo Eun Park, Sanghun Lee, Ohyung Kwon, Woo Jae Lee, Se Hun Kwon, Woo Hee Kim, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

A method for significantly increasing the growth rates (GRs) of high-k oxide thin films grown via plasma-enhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O₂ plasma oxidant was developed. This approach led to improvements of ∼60% in the saturation GRs of PE-ALD ZrO₂, HfO₂, and SiO₂. Furthermore, despite the significantly higher GR enabled by PE-ALD, the mechanical and dielectric properties of the PE-ALD oxide films were similar or even superior to those of films grown via the conventional O₂ plasma process. Optical emission spectroscopy analyses in conjunction with theoretical calculation of the electron energy distribution function revealed that adding Ar gas to the O₂ plasma increased the density of high-energy electrons, thereby generating more O₂ plasma species, such as ions and radicals, which played a key role in improving the GRs and the properties of the films. This promising approach is expected to facilitate the high-volume manufacturing of films via PE-ALD, especially for use as gate insulators in thin-film transistor-based devices in the display industry.

Original language	English
Pages (from-to)	40286-40293
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	46
DOIs	https://doi.org/10.1021/acsami.8b14244
Publication status	Published - 2018 Nov 21

Bibliographical note

Funding Information:
This work was supported by the Materials and Components Technology Development Program of MOTIE/KEIT [10080642, Development on precursors for carbon/halogen-free thin film and their delivery system for high-k/metal gate application]. It was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (no. NRF-2017R1C1B5076821).

Publisher Copyright:
Copyright © 2018 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

Access to Document

10.1021/acsami.8b14244

Cite this

@article{ecf65e862e5045cc939b704a67f26025,

title = "Effects of Ar Addition to O2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films",

abstract = "A method for significantly increasing the growth rates (GRs) of high-k oxide thin films grown via plasma-enhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O2 plasma oxidant was developed. This approach led to improvements of ∼60% in the saturation GRs of PE-ALD ZrO2, HfO2, and SiO2. Furthermore, despite the significantly higher GR enabled by PE-ALD, the mechanical and dielectric properties of the PE-ALD oxide films were similar or even superior to those of films grown via the conventional O2 plasma process. Optical emission spectroscopy analyses in conjunction with theoretical calculation of the electron energy distribution function revealed that adding Ar gas to the O2 plasma increased the density of high-energy electrons, thereby generating more O2 plasma species, such as ions and radicals, which played a key role in improving the GRs and the properties of the films. This promising approach is expected to facilitate the high-volume manufacturing of films via PE-ALD, especially for use as gate insulators in thin-film transistor-based devices in the display industry.",

author = "Hanearl Jung and Oh, {Il Kwon} and Yoon, {Chang Mo} and Park, {Bo Eun} and Sanghun Lee and Ohyung Kwon and Lee, {Woo Jae} and Kwon, {Se Hun} and Kim, {Woo Hee} and Hyungjun Kim",

note = "Funding Information: This work was supported by the Materials and Components Technology Development Program of MOTIE/KEIT [10080642, Development on precursors for carbon/halogen-free thin film and their delivery system for high-k/metal gate application]. It was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (no. NRF-2017R1C1B5076821). Publisher Copyright: Copyright {\textcopyright} 2018 American Chemical Society.",

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AU - Lee, Sanghun

AU - Kwon, Ohyung

AU - Lee, Woo Jae

AU - Kwon, Se Hun

AU - Kim, Woo Hee

AU - Kim, Hyungjun

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PY - 2018/11/21

Y1 - 2018/11/21

N2 - A method for significantly increasing the growth rates (GRs) of high-k oxide thin films grown via plasma-enhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O2 plasma oxidant was developed. This approach led to improvements of ∼60% in the saturation GRs of PE-ALD ZrO2, HfO2, and SiO2. Furthermore, despite the significantly higher GR enabled by PE-ALD, the mechanical and dielectric properties of the PE-ALD oxide films were similar or even superior to those of films grown via the conventional O2 plasma process. Optical emission spectroscopy analyses in conjunction with theoretical calculation of the electron energy distribution function revealed that adding Ar gas to the O2 plasma increased the density of high-energy electrons, thereby generating more O2 plasma species, such as ions and radicals, which played a key role in improving the GRs and the properties of the films. This promising approach is expected to facilitate the high-volume manufacturing of films via PE-ALD, especially for use as gate insulators in thin-film transistor-based devices in the display industry.

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