Effects of Ar Addition to O₂ Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films

Physics

• Atomic Layer Epitaxy 100%
• Growth Rate 66%
• Thin Films 33%
• Oxide 33%
• Gases 33%
• Insulators 16%
• Strength of Materials 16%
• Energy Distribution 16%
• Electron Energy 16%
• Optical Emission Spectroscopy 16%
• Plasma Density 16%
• High Energy Electron 16%
• Increasing 16%
• Volume 16%
• Dielectric Properties 16%

Chemistry

• Atomic Layer Epitaxy 100%
• Liquid Film 50%
• Oxide 33%
• Gas 33%
• Dielectric Property 16%
• Nonconductor 16%
• Optical Emission Spectroscopy 16%
• Inorganic Ion 16%
• Distribution Function 16%
• Procedure 16%
• Mechanical Property 16%
• Volume 16%
• Density 16%
• Device 16%
• Industry 16%

Material Science

• Growth Rate 66%
• Liquid Films 50%
• Plasma Process 50%
• Thin Films 33%
• Gas 33%
• Saturation 33%
• Oxidant 16%
• Theoretical Calculation 16%
• Thin-Film Transistor 16%
• Plasma Density 16%