Effects of artificial defects on the electrical transport of single-walled carbon nanotubes

J. W. Park, Jinhee Kim, J. O. Lee, K. C. Kang, J. J. Kim, Kyung-hwa Yoo

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We have investigated the effect of defects on the electrical transport properties of metallic single-walled carbon nanotubes (SWNTs). The defects are artificially induced by ion implantation and by deforming the SWNT with the SiO 2 film deposited on it. Both defects are observed to act as gate-tunable electron scatters. With the dual gate structure, it is also shown that the scattering strength by the defect at a given back-gate voltage can be tuned by adjusting the top gate.

Original languageEnglish
Pages (from-to)133-135
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number1
DOIs
Publication statusPublished - 2002 Jan 7

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carbon nanotubes
defects
ion implantation
transport properties
adjusting
electric potential
scattering
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Park, J. W. ; Kim, Jinhee ; Lee, J. O. ; Kang, K. C. ; Kim, J. J. ; Yoo, Kyung-hwa. / Effects of artificial defects on the electrical transport of single-walled carbon nanotubes. In: Applied Physics Letters. 2002 ; Vol. 80, No. 1. pp. 133-135.
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Effects of artificial defects on the electrical transport of single-walled carbon nanotubes. / Park, J. W.; Kim, Jinhee; Lee, J. O.; Kang, K. C.; Kim, J. J.; Yoo, Kyung-hwa.

In: Applied Physics Letters, Vol. 80, No. 1, 07.01.2002, p. 133-135.

Research output: Contribution to journalArticle

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