Effects of artificial defects on the electrical transport of single-walled carbon nanotubes

J. W. Park; Jinhee Kim; J. O. Lee; K. C. Kang; J. J. Kim; K. H. Yoo

doi:10.1063/1.1429751

Effects of artificial defects on the electrical transport of single-walled carbon nanotubes

J. W. Park, Jinhee Kim, J. O. Lee, K. C. Kang, J. J. Kim, K. H. Yoo

Department of Physics

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31 Citations (Scopus)

Abstract

We have investigated the effect of defects on the electrical transport properties of metallic single-walled carbon nanotubes (SWNTs). The defects are artificially induced by ion implantation and by deforming the SWNT with the SiO₂ film deposited on it. Both defects are observed to act as gate-tunable electron scatters. With the dual gate structure, it is also shown that the scattering strength by the defect at a given back-gate voltage can be tuned by adjusting the top gate.

Original language	English
Pages (from-to)	133-135
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	1
DOIs	https://doi.org/10.1063/1.1429751
Publication status	Published - 2002 Jan 7

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1429751

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AU - Yoo, K. H.

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Effects of artificial defects on the electrical transport of single-walled carbon nanotubes

Abstract

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