We have investigated the effect of defects on the electrical transport properties of metallic single-walled carbon nanotubes (SWNTs). The defects are artificially induced by ion implantation and by deforming the SWNT with the SiO 2 film deposited on it. Both defects are observed to act as gate-tunable electron scatters. With the dual gate structure, it is also shown that the scattering strength by the defect at a given back-gate voltage can be tuned by adjusting the top gate.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)