Effects of artificial defects on the electrical transport of single-walled carbon nanotubes

J. W. Park, Jinhee Kim, J. O. Lee, K. C. Kang, J. J. Kim, K. H. Yoo

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

We have investigated the effect of defects on the electrical transport properties of metallic single-walled carbon nanotubes (SWNTs). The defects are artificially induced by ion implantation and by deforming the SWNT with the SiO2 film deposited on it. Both defects are observed to act as gate-tunable electron scatters. With the dual gate structure, it is also shown that the scattering strength by the defect at a given back-gate voltage can be tuned by adjusting the top gate.

Original languageEnglish
Pages (from-to)133-135
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number1
DOIs
Publication statusPublished - 2002 Jan 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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