Effects of atomic layer deposition temperatures on structural and electrical properties of ZnO films and its thin film transistors

Su Cheol Gong, Seokhwan Bang, Hyeongtag Jeon, Hyung-Ho Park, Young Chul Chang, Ho Jung Chang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Organic-inorganic thin film transistors (OITFTs) with Al/ZnO/PVP structure on Si substrate were fabricated and studied as to their structural and electrical properties. PVP (poly-4-vinylphenol) organic gate insulator was coated on Si substrate by spin coating method. The ZnO was deposited as an active layer by using the atomic layer deposition (ALD) method on PVP/Si substrate at various temperatures ranging from 80 to 140 °C. The structural and electrical properties of ZnO thin films were analyzed by X-ray diffraction and by hall-effect measurement system for optimum process of the OITFT. The grain size and carrier concentration of ZnO films increased, and the resistivity decreased as the deposition temperature increased from 80 to 140 °C. The field effect mobility, on/off current ratio and threshold voltage of OITFTs with ZnO active layer deposited at 100 °C were found to be 0.37 cm 2/V.s, 5x102 and 5 V, respectively.

Original languageEnglish
Pages (from-to)953-958
Number of pages6
JournalMetals and Materials International
Volume16
Issue number6
DOIs
Publication statusPublished - 2010 Dec 1

Fingerprint

Atomic layer deposition
Thin film transistors
atomic layer epitaxy
Structural properties
Electric properties
transistors
electrical properties
Substrates
thin films
Hall effect
Spin coating
Threshold voltage
Temperature
Carrier concentration
temperature
threshold voltage
coating
X ray diffraction
Thin films
grain size

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

Cite this

Gong, Su Cheol ; Bang, Seokhwan ; Jeon, Hyeongtag ; Park, Hyung-Ho ; Chang, Young Chul ; Chang, Ho Jung. / Effects of atomic layer deposition temperatures on structural and electrical properties of ZnO films and its thin film transistors. In: Metals and Materials International. 2010 ; Vol. 16, No. 6. pp. 953-958.
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Effects of atomic layer deposition temperatures on structural and electrical properties of ZnO films and its thin film transistors. / Gong, Su Cheol; Bang, Seokhwan; Jeon, Hyeongtag; Park, Hyung-Ho; Chang, Young Chul; Chang, Ho Jung.

In: Metals and Materials International, Vol. 16, No. 6, 01.12.2010, p. 953-958.

Research output: Contribution to journalArticle

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AU - Bang, Seokhwan

AU - Jeon, Hyeongtag

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AU - Chang, Ho Jung

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