Effects of B doping on hydrogen desorption from Si(001) during gas-source molecular-beam epitaxy from Si2H6 and B2H6

Hyungjun Kim, G. Glass, S. Y. Park, T. Spila, N. Taylor, J. R. Abelson, J. E. Greene

Research output: Contribution to journalArticle

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Abstract

Boron doping concentrations ≳6×1019 cm-3 were found to increase Si(001) growth rates RSi at low temperatures while decreasing RSi at higher temperatures during gas-source molecular beam epitaxy (GS-MBE) from Si2H6 and B2H6. In order to probe the mechanisms governing these effects, Si(001) samples with B coverages θB ranging from <0.05 to ≃0.5 ML were prepared by exposing clean Si(001)2×1 wafers to B2H6 doses between 2×1017 and 4×1020 cm-20 at 200-400°C. The samples were then heated to 700°C to desorb the hydrogen, cooled to 200°C, and exposed to atomic deuterium until saturation coverage. D2 temperature programmed desorption spectra exhibit β2 and β1 peaks due to dideuteride and monodeuteride desorption at 405 and 515°C as well as new B-induced peaks, β*2 and β*1, at 330 and 470°C. Increasing θB increases the area under β*2 and β*1 at the expense of β2 and β1. Moreover, the total D coverage continuously decreases from ≃1.23 ML in the absence of B to ≃0.74 ML al θB=0.5 ML. We propose that the observed B-induced decrease in the Si*-D bond strength, where Si* represents surface Si atoms bonded to second-layer B atoms, is due to charge transfer and increased Si* dimer strain. The Si* to B charge transfer also deactivates Si surface dangling bonds causing the decrease in θD. These results are used to explain the GS-MBE growth kinetics.

Original languageEnglish
Pages (from-to)3869-3871
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number25
DOIs
Publication statusPublished - 1996 Dec 16

Fingerprint

molecular beam epitaxy
desorption
charge transfer
high temperature gases
hydrogen
gases
atoms
deuterium
boron
dimers
wafers
saturation
dosage
probes
kinetics
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Hyungjun ; Glass, G. ; Park, S. Y. ; Spila, T. ; Taylor, N. ; Abelson, J. R. ; Greene, J. E. / Effects of B doping on hydrogen desorption from Si(001) during gas-source molecular-beam epitaxy from Si2H6 and B2H6. In: Applied Physics Letters. 1996 ; Vol. 69, No. 25. pp. 3869-3871.
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abstract = "Boron doping concentrations ≳6×1019 cm-3 were found to increase Si(001) growth rates RSi at low temperatures while decreasing RSi at higher temperatures during gas-source molecular beam epitaxy (GS-MBE) from Si2H6 and B2H6. In order to probe the mechanisms governing these effects, Si(001) samples with B coverages θB ranging from <0.05 to ≃0.5 ML were prepared by exposing clean Si(001)2×1 wafers to B2H6 doses between 2×1017 and 4×1020 cm-20 at 200-400°C. The samples were then heated to 700°C to desorb the hydrogen, cooled to 200°C, and exposed to atomic deuterium until saturation coverage. D2 temperature programmed desorption spectra exhibit β2 and β1 peaks due to dideuteride and monodeuteride desorption at 405 and 515°C as well as new B-induced peaks, β*2 and β*1, at 330 and 470°C. Increasing θB increases the area under β*2 and β*1 at the expense of β2 and β1. Moreover, the total D coverage continuously decreases from ≃1.23 ML in the absence of B to ≃0.74 ML al θB=0.5 ML. We propose that the observed B-induced decrease in the Si*-D bond strength, where Si* represents surface Si atoms bonded to second-layer B atoms, is due to charge transfer and increased Si* dimer strain. The Si* to B charge transfer also deactivates Si surface dangling bonds causing the decrease in θD. These results are used to explain the GS-MBE growth kinetics.",
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Effects of B doping on hydrogen desorption from Si(001) during gas-source molecular-beam epitaxy from Si2H6 and B2H6. / Kim, Hyungjun; Glass, G.; Park, S. Y.; Spila, T.; Taylor, N.; Abelson, J. R.; Greene, J. E.

In: Applied Physics Letters, Vol. 69, No. 25, 16.12.1996, p. 3869-3871.

Research output: Contribution to journalArticle

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T1 - Effects of B doping on hydrogen desorption from Si(001) during gas-source molecular-beam epitaxy from Si2H6 and B2H6

AU - Kim, Hyungjun

AU - Glass, G.

AU - Park, S. Y.

AU - Spila, T.

AU - Taylor, N.

AU - Abelson, J. R.

AU - Greene, J. E.

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N2 - Boron doping concentrations ≳6×1019 cm-3 were found to increase Si(001) growth rates RSi at low temperatures while decreasing RSi at higher temperatures during gas-source molecular beam epitaxy (GS-MBE) from Si2H6 and B2H6. In order to probe the mechanisms governing these effects, Si(001) samples with B coverages θB ranging from <0.05 to ≃0.5 ML were prepared by exposing clean Si(001)2×1 wafers to B2H6 doses between 2×1017 and 4×1020 cm-20 at 200-400°C. The samples were then heated to 700°C to desorb the hydrogen, cooled to 200°C, and exposed to atomic deuterium until saturation coverage. D2 temperature programmed desorption spectra exhibit β2 and β1 peaks due to dideuteride and monodeuteride desorption at 405 and 515°C as well as new B-induced peaks, β*2 and β*1, at 330 and 470°C. Increasing θB increases the area under β*2 and β*1 at the expense of β2 and β1. Moreover, the total D coverage continuously decreases from ≃1.23 ML in the absence of B to ≃0.74 ML al θB=0.5 ML. We propose that the observed B-induced decrease in the Si*-D bond strength, where Si* represents surface Si atoms bonded to second-layer B atoms, is due to charge transfer and increased Si* dimer strain. The Si* to B charge transfer also deactivates Si surface dangling bonds causing the decrease in θD. These results are used to explain the GS-MBE growth kinetics.

AB - Boron doping concentrations ≳6×1019 cm-3 were found to increase Si(001) growth rates RSi at low temperatures while decreasing RSi at higher temperatures during gas-source molecular beam epitaxy (GS-MBE) from Si2H6 and B2H6. In order to probe the mechanisms governing these effects, Si(001) samples with B coverages θB ranging from <0.05 to ≃0.5 ML were prepared by exposing clean Si(001)2×1 wafers to B2H6 doses between 2×1017 and 4×1020 cm-20 at 200-400°C. The samples were then heated to 700°C to desorb the hydrogen, cooled to 200°C, and exposed to atomic deuterium until saturation coverage. D2 temperature programmed desorption spectra exhibit β2 and β1 peaks due to dideuteride and monodeuteride desorption at 405 and 515°C as well as new B-induced peaks, β*2 and β*1, at 330 and 470°C. Increasing θB increases the area under β*2 and β*1 at the expense of β2 and β1. Moreover, the total D coverage continuously decreases from ≃1.23 ML in the absence of B to ≃0.74 ML al θB=0.5 ML. We propose that the observed B-induced decrease in the Si*-D bond strength, where Si* represents surface Si atoms bonded to second-layer B atoms, is due to charge transfer and increased Si* dimer strain. The Si* to B charge transfer also deactivates Si surface dangling bonds causing the decrease in θD. These results are used to explain the GS-MBE growth kinetics.

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