Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4

Soo Hyun Kim, Eui Seong Hwang, Baek Mann Kim, Joo Wan Lee, Ho Jung Sun, Tae Eun Hong, Jun Ki Kim, Hyunchul Sohn, Jinwoong Kim, Tae Sik Yoon

Research output: Contribution to journalArticle

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Abstract

The effects of diborane (B2H6) pretreatment on atomic layer deposition (ALD) of tungsten (W) thin film using a sequential supply of WF6 and SiH4 on thermally grown SiO2 and TiN films at 300°C were investigated. The results show that the B 2H6 pretreatment reduces the incubation time for film growth. X-ray photoelectron spectroscopy and scanning electron microscopy analysis suggest that elemental B on SiO2, released during B 2H6 pretreatment, induce rapid W nucleation. The drastically improved step coverage of ALD-W film is achieved at the ultrahigh aspect ratio contact (height: 2.23 μm and top diameter: 0.14 μm) by the enhanced nucleation and growth via B2H6 pretreatment. The effects of B2H6 pretreatment on the properties of ALD-W films such as roughness, phase, microstructure, and resistivity are also investigated.

Original languageEnglish
Pages (from-to)C155-C159
JournalElectrochemical and Solid-State Letters
Volume8
Issue number10
DOIs
Publication statusPublished - 2005 Oct 7

Fingerprint

Atomic layer deposition
atomic layer epitaxy
pretreatment
Nucleation
Tungsten
Film growth
Aspect ratio
nucleation
diborane
X ray photoelectron spectroscopy
Surface roughness
Thin films
Microstructure
Scanning electron microscopy
aspect ratio
tungsten
roughness
photoelectron spectroscopy
microstructure
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Kim, S. H., Hwang, E. S., Kim, B. M., Lee, J. W., Sun, H. J., Hong, T. E., ... Yoon, T. S. (2005). Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4. Electrochemical and Solid-State Letters, 8(10), C155-C159. https://doi.org/10.1149/1.2035703
Kim, Soo Hyun ; Hwang, Eui Seong ; Kim, Baek Mann ; Lee, Joo Wan ; Sun, Ho Jung ; Hong, Tae Eun ; Kim, Jun Ki ; Sohn, Hyunchul ; Kim, Jinwoong ; Yoon, Tae Sik. / Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4. In: Electrochemical and Solid-State Letters. 2005 ; Vol. 8, No. 10. pp. C155-C159.
@article{249a93440ae94d7683bf9af8428801e4,
title = "Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4",
abstract = "The effects of diborane (B2H6) pretreatment on atomic layer deposition (ALD) of tungsten (W) thin film using a sequential supply of WF6 and SiH4 on thermally grown SiO2 and TiN films at 300°C were investigated. The results show that the B 2H6 pretreatment reduces the incubation time for film growth. X-ray photoelectron spectroscopy and scanning electron microscopy analysis suggest that elemental B on SiO2, released during B 2H6 pretreatment, induce rapid W nucleation. The drastically improved step coverage of ALD-W film is achieved at the ultrahigh aspect ratio contact (height: 2.23 μm and top diameter: 0.14 μm) by the enhanced nucleation and growth via B2H6 pretreatment. The effects of B2H6 pretreatment on the properties of ALD-W films such as roughness, phase, microstructure, and resistivity are also investigated.",
author = "Kim, {Soo Hyun} and Hwang, {Eui Seong} and Kim, {Baek Mann} and Lee, {Joo Wan} and Sun, {Ho Jung} and Hong, {Tae Eun} and Kim, {Jun Ki} and Hyunchul Sohn and Jinwoong Kim and Yoon, {Tae Sik}",
year = "2005",
month = "10",
day = "7",
doi = "10.1149/1.2035703",
language = "English",
volume = "8",
pages = "C155--C159",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "10",

}

Kim, SH, Hwang, ES, Kim, BM, Lee, JW, Sun, HJ, Hong, TE, Kim, JK, Sohn, H, Kim, J & Yoon, TS 2005, 'Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4', Electrochemical and Solid-State Letters, vol. 8, no. 10, pp. C155-C159. https://doi.org/10.1149/1.2035703

Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4. / Kim, Soo Hyun; Hwang, Eui Seong; Kim, Baek Mann; Lee, Joo Wan; Sun, Ho Jung; Hong, Tae Eun; Kim, Jun Ki; Sohn, Hyunchul; Kim, Jinwoong; Yoon, Tae Sik.

In: Electrochemical and Solid-State Letters, Vol. 8, No. 10, 07.10.2005, p. C155-C159.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4

AU - Kim, Soo Hyun

AU - Hwang, Eui Seong

AU - Kim, Baek Mann

AU - Lee, Joo Wan

AU - Sun, Ho Jung

AU - Hong, Tae Eun

AU - Kim, Jun Ki

AU - Sohn, Hyunchul

AU - Kim, Jinwoong

AU - Yoon, Tae Sik

PY - 2005/10/7

Y1 - 2005/10/7

N2 - The effects of diborane (B2H6) pretreatment on atomic layer deposition (ALD) of tungsten (W) thin film using a sequential supply of WF6 and SiH4 on thermally grown SiO2 and TiN films at 300°C were investigated. The results show that the B 2H6 pretreatment reduces the incubation time for film growth. X-ray photoelectron spectroscopy and scanning electron microscopy analysis suggest that elemental B on SiO2, released during B 2H6 pretreatment, induce rapid W nucleation. The drastically improved step coverage of ALD-W film is achieved at the ultrahigh aspect ratio contact (height: 2.23 μm and top diameter: 0.14 μm) by the enhanced nucleation and growth via B2H6 pretreatment. The effects of B2H6 pretreatment on the properties of ALD-W films such as roughness, phase, microstructure, and resistivity are also investigated.

AB - The effects of diborane (B2H6) pretreatment on atomic layer deposition (ALD) of tungsten (W) thin film using a sequential supply of WF6 and SiH4 on thermally grown SiO2 and TiN films at 300°C were investigated. The results show that the B 2H6 pretreatment reduces the incubation time for film growth. X-ray photoelectron spectroscopy and scanning electron microscopy analysis suggest that elemental B on SiO2, released during B 2H6 pretreatment, induce rapid W nucleation. The drastically improved step coverage of ALD-W film is achieved at the ultrahigh aspect ratio contact (height: 2.23 μm and top diameter: 0.14 μm) by the enhanced nucleation and growth via B2H6 pretreatment. The effects of B2H6 pretreatment on the properties of ALD-W films such as roughness, phase, microstructure, and resistivity are also investigated.

UR - http://www.scopus.com/inward/record.url?scp=25644441800&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=25644441800&partnerID=8YFLogxK

U2 - 10.1149/1.2035703

DO - 10.1149/1.2035703

M3 - Article

AN - SCOPUS:25644441800

VL - 8

SP - C155-C159

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 10

ER -