Effects of B 2 H 6 pretreatment on ALD of W film using a sequential supply of WF 6 and SiH 4

Soo Hyun Kim, Eui Seong Hwang, Baek Mann Kim, Joo Wan Lee, Ho Jung Sun, Tae Eun Hong, Jun Ki Kim, Hyunchul Sohn, Jinwoong Kim, Tae Sik Yoon

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The effects of diborane (B 2 H 6 ) pretreatment on atomic layer deposition (ALD) of tungsten (W) thin film using a sequential supply of WF 6 and SiH 4 on thermally grown SiO 2 and TiN films at 300°C were investigated. The results show that the B 2 H 6 pretreatment reduces the incubation time for film growth. X-ray photoelectron spectroscopy and scanning electron microscopy analysis suggest that elemental B on SiO 2 , released during B 2 H 6 pretreatment, induce rapid W nucleation. The drastically improved step coverage of ALD-W film is achieved at the ultrahigh aspect ratio contact (height: 2.23 μm and top diameter: 0.14 μm) by the enhanced nucleation and growth via B 2 H 6 pretreatment. The effects of B 2 H 6 pretreatment on the properties of ALD-W films such as roughness, phase, microstructure, and resistivity are also investigated.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume8
Issue number10
DOIs
Publication statusPublished - 2005 Oct 7

Fingerprint

Atomic layer deposition
atomic layer epitaxy
pretreatment
Nucleation
Tungsten
Film growth
Aspect ratio
nucleation
diborane
X ray photoelectron spectroscopy
Surface roughness
Thin films
Microstructure
Scanning electron microscopy
aspect ratio
tungsten
roughness
photoelectron spectroscopy
microstructure
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Kim, Soo Hyun ; Hwang, Eui Seong ; Kim, Baek Mann ; Lee, Joo Wan ; Sun, Ho Jung ; Hong, Tae Eun ; Kim, Jun Ki ; Sohn, Hyunchul ; Kim, Jinwoong ; Yoon, Tae Sik. / Effects of B 2 H 6 pretreatment on ALD of W film using a sequential supply of WF 6 and SiH 4 In: Electrochemical and Solid-State Letters. 2005 ; Vol. 8, No. 10.
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abstract = "The effects of diborane (B 2 H 6 ) pretreatment on atomic layer deposition (ALD) of tungsten (W) thin film using a sequential supply of WF 6 and SiH 4 on thermally grown SiO 2 and TiN films at 300°C were investigated. The results show that the B 2 H 6 pretreatment reduces the incubation time for film growth. X-ray photoelectron spectroscopy and scanning electron microscopy analysis suggest that elemental B on SiO 2 , released during B 2 H 6 pretreatment, induce rapid W nucleation. The drastically improved step coverage of ALD-W film is achieved at the ultrahigh aspect ratio contact (height: 2.23 μm and top diameter: 0.14 μm) by the enhanced nucleation and growth via B 2 H 6 pretreatment. The effects of B 2 H 6 pretreatment on the properties of ALD-W films such as roughness, phase, microstructure, and resistivity are also investigated.",
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Effects of B 2 H 6 pretreatment on ALD of W film using a sequential supply of WF 6 and SiH 4 . / Kim, Soo Hyun; Hwang, Eui Seong; Kim, Baek Mann; Lee, Joo Wan; Sun, Ho Jung; Hong, Tae Eun; Kim, Jun Ki; Sohn, Hyunchul; Kim, Jinwoong; Yoon, Tae Sik.

In: Electrochemical and Solid-State Letters, Vol. 8, No. 10, 07.10.2005.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of B 2 H 6 pretreatment on ALD of W film using a sequential supply of WF 6 and SiH 4

AU - Kim, Soo Hyun

AU - Hwang, Eui Seong

AU - Kim, Baek Mann

AU - Lee, Joo Wan

AU - Sun, Ho Jung

AU - Hong, Tae Eun

AU - Kim, Jun Ki

AU - Sohn, Hyunchul

AU - Kim, Jinwoong

AU - Yoon, Tae Sik

PY - 2005/10/7

Y1 - 2005/10/7

N2 - The effects of diborane (B 2 H 6 ) pretreatment on atomic layer deposition (ALD) of tungsten (W) thin film using a sequential supply of WF 6 and SiH 4 on thermally grown SiO 2 and TiN films at 300°C were investigated. The results show that the B 2 H 6 pretreatment reduces the incubation time for film growth. X-ray photoelectron spectroscopy and scanning electron microscopy analysis suggest that elemental B on SiO 2 , released during B 2 H 6 pretreatment, induce rapid W nucleation. The drastically improved step coverage of ALD-W film is achieved at the ultrahigh aspect ratio contact (height: 2.23 μm and top diameter: 0.14 μm) by the enhanced nucleation and growth via B 2 H 6 pretreatment. The effects of B 2 H 6 pretreatment on the properties of ALD-W films such as roughness, phase, microstructure, and resistivity are also investigated.

AB - The effects of diborane (B 2 H 6 ) pretreatment on atomic layer deposition (ALD) of tungsten (W) thin film using a sequential supply of WF 6 and SiH 4 on thermally grown SiO 2 and TiN films at 300°C were investigated. The results show that the B 2 H 6 pretreatment reduces the incubation time for film growth. X-ray photoelectron spectroscopy and scanning electron microscopy analysis suggest that elemental B on SiO 2 , released during B 2 H 6 pretreatment, induce rapid W nucleation. The drastically improved step coverage of ALD-W film is achieved at the ultrahigh aspect ratio contact (height: 2.23 μm and top diameter: 0.14 μm) by the enhanced nucleation and growth via B 2 H 6 pretreatment. The effects of B 2 H 6 pretreatment on the properties of ALD-W films such as roughness, phase, microstructure, and resistivity are also investigated.

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