Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4

Soo Hyun Kim, Eui Seong Hwang, Baek Mann Kim, Joo Wan Lee, Ho Jung Sun, Tae Eun Hong, Jun Ki Kim, Hyunchul Sohn, Jinwoong Kim, Tae Sik Yoon

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Abstract

The effects of diborane (B2H6) pretreatment on atomic layer deposition (ALD) of tungsten (W) thin film using a sequential supply of WF6 and SiH4 on thermally grown SiO2 and TiN films at 300°C were investigated. The results show that the B 2H6 pretreatment reduces the incubation time for film growth. X-ray photoelectron spectroscopy and scanning electron microscopy analysis suggest that elemental B on SiO2, released during B 2H6 pretreatment, induce rapid W nucleation. The drastically improved step coverage of ALD-W film is achieved at the ultrahigh aspect ratio contact (height: 2.23 μm and top diameter: 0.14 μm) by the enhanced nucleation and growth via B2H6 pretreatment. The effects of B2H6 pretreatment on the properties of ALD-W films such as roughness, phase, microstructure, and resistivity are also investigated.

Original languageEnglish
Pages (from-to)C155-C159
JournalElectrochemical and Solid-State Letters
Volume8
Issue number10
DOIs
Publication statusPublished - 2005 Oct 7

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Kim, S. H., Hwang, E. S., Kim, B. M., Lee, J. W., Sun, H. J., Hong, T. E., Kim, J. K., Sohn, H., Kim, J., & Yoon, T. S. (2005). Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4. Electrochemical and Solid-State Letters, 8(10), C155-C159. https://doi.org/10.1149/1.2035703