Effects of BF2 and B implantation-doping on crystalline degradation of pseudomorphic metastable Ge0.06Si0.94

Seongil Im, Min Suk Oh, Min Ho Joo, Hyo Bae Kim, Hyun Kyoung Kim, Jong Han Song

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Pseudomorphic metastabile Ge0.06Si0.94 layers grown by molecular beam epitaxy (MBE) on Si (100) substrates were implanted at room temperature by 70 keV BF2 ions with two different doses of 3 × 1013 and 2.5 × 1014 cm-2, or by 16 keV B ions with a dose of 4 × 1014 cm-2. The implanted samples were subsequently annealed at 800 and 900°C for 30 min in a vacuum tube furnace. Observed by 2 MeV 4He channeling spectrometry before annealing, only the sample implanted at a dose of 2.5 × 1014 BF2 cm-2 is amorphized from surface to a depth of about 90 nm. Crystalline degradation of post-annealed Ge0.06Si0.94 samples becomes pronounced as the dose increases. Even though the both samples implanted with 3 × 1013 BF2 cm-2 and 4 × 1014 B cm-2 initially show almost the same levels of radiation damage in the channeling spectra, the sample implanted at 3 × 1013 BF2 cm-2 only conserves the same crystalline quality as the as-grown GeSi after being annealed. It is concluded that such a low dose of 3 × 1013 BF2 cm-2 can be doped by implantation without causing radiation or strain-induced defects in the pseudomorphic GeSi.

Original languageEnglish
Pages (from-to)6977-6980
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number12 B
Publication statusPublished - 1998

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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