Pseudomorphic metastabile Ge0.06Si0.94 layers grown by molecular beam epitaxy (MBE) on Si (100) substrates were implanted at room temperature by 70 keV BF2 ions with two different doses of 3 × 1013 and 2.5 × 1014 cm-2, or by 16 keV B ions with a dose of 4 × 1014 cm-2. The implanted samples were subsequently annealed at 800 and 900°C for 30 min in a vacuum tube furnace. Observed by 2 MeV 4He channeling spectrometry before annealing, only the sample implanted at a dose of 2.5 × 1014 BF2 cm-2 is amorphized from surface to a depth of about 90 nm. Crystalline degradation of post-annealed Ge0.06Si0.94 samples becomes pronounced as the dose increases. Even though the both samples implanted with 3 × 1013 BF2 cm-2 and 4 × 1014 B cm-2 initially show almost the same levels of radiation damage in the channeling spectra, the sample implanted at 3 × 1013 BF2 cm-2 only conserves the same crystalline quality as the as-grown GeSi after being annealed. It is concluded that such a low dose of 3 × 1013 BF2 cm-2 can be doped by implantation without causing radiation or strain-induced defects in the pseudomorphic GeSi.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||12 B|
|Publication status||Published - 1998 Dec 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)