Effects of BF+ 2 implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers

M. S. Oh, M. H. Joo, Seongil Im, H. B. Kim, H. K. Kim, J. H. Song

Research output: Contribution to journalArticle

Abstract

Metastable pseudomorphic Ge0.06Si0.94 alloy layers grown by molecular beam epitaxy (MBE) on Si (100) substrates were implanted at room temperature by 70 keV BF2 + ions with three different doses of 3×1013, 1×1014, and 2.5×1014 cm-2. The implanted samples were subsequently annealed at 800 °C and 900 °C for 30 min in a vacuum tube furnace. Observed by MeV 4He channeling spectrometry, the sample implanted at a dose of 2.5×1014 BF2 + cm-2 is amorphized from surface to a depth of about 90 nm among all as-implanted samples. Crystalline degradation and strain-relaxation of post-annealed Ge0.06Si0.94 samples become pronounced as the dose increases. Only the samples implanted at 3×1013 cm-2 do not visibly degrade nor relax during anneal at 800 °C. In the leakage current measurements, no serious leakage is found in most of the samples except for one which is annealed at 8000 °C for 30 min after implantation to a dose of 2.5×1014 cm-2. It is concluded that such a low dose of 3×1013 BF2 + cm-2 can be doped by implantation to conserve intrinsic strain of the pseudomorphic GeSi, while for high dose regime to meet the strain-relaxation, annealing at high temperatures over 900 °C is necessary to prevent serious leakages from occuring near relaxed GeSi/Si interfaces.

Original languageEnglish
Pages (from-to)49-55
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume147
Issue number1-4
DOIs
Publication statusPublished - 1999 Jan 1

Fingerprint

Strain relaxation
implantation
dosage
Electron tubes
Electric current measurement
Molecular beam epitaxy
Leakage currents
Spectrometry
Furnaces
leakage
Annealing
Crystalline materials
Degradation
Temperature
Ions
Substrates
vacuum tubes
furnaces
molecular beam epitaxy
degradation

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

@article{8801268f87ca4604be9a2b4f3001f851,
title = "Effects of BF+ 2 implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers",
abstract = "Metastable pseudomorphic Ge0.06Si0.94 alloy layers grown by molecular beam epitaxy (MBE) on Si (100) substrates were implanted at room temperature by 70 keV BF2 + ions with three different doses of 3×1013, 1×1014, and 2.5×1014 cm-2. The implanted samples were subsequently annealed at 800 °C and 900 °C for 30 min in a vacuum tube furnace. Observed by MeV 4He channeling spectrometry, the sample implanted at a dose of 2.5×1014 BF2 + cm-2 is amorphized from surface to a depth of about 90 nm among all as-implanted samples. Crystalline degradation and strain-relaxation of post-annealed Ge0.06Si0.94 samples become pronounced as the dose increases. Only the samples implanted at 3×1013 cm-2 do not visibly degrade nor relax during anneal at 800 °C. In the leakage current measurements, no serious leakage is found in most of the samples except for one which is annealed at 8000 °C for 30 min after implantation to a dose of 2.5×1014 cm-2. It is concluded that such a low dose of 3×1013 BF2 + cm-2 can be doped by implantation to conserve intrinsic strain of the pseudomorphic GeSi, while for high dose regime to meet the strain-relaxation, annealing at high temperatures over 900 °C is necessary to prevent serious leakages from occuring near relaxed GeSi/Si interfaces.",
author = "Oh, {M. S.} and Joo, {M. H.} and Seongil Im and Kim, {H. B.} and Kim, {H. K.} and Song, {J. H.}",
year = "1999",
month = "1",
day = "1",
doi = "10.1016/S0168-583X(98)90559-6",
language = "English",
volume = "147",
pages = "49--55",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

Effects of BF+ 2 implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers. / Oh, M. S.; Joo, M. H.; Im, Seongil; Kim, H. B.; Kim, H. K.; Song, J. H.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 147, No. 1-4, 01.01.1999, p. 49-55.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of BF+ 2 implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers

AU - Oh, M. S.

AU - Joo, M. H.

AU - Im, Seongil

AU - Kim, H. B.

AU - Kim, H. K.

AU - Song, J. H.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Metastable pseudomorphic Ge0.06Si0.94 alloy layers grown by molecular beam epitaxy (MBE) on Si (100) substrates were implanted at room temperature by 70 keV BF2 + ions with three different doses of 3×1013, 1×1014, and 2.5×1014 cm-2. The implanted samples were subsequently annealed at 800 °C and 900 °C for 30 min in a vacuum tube furnace. Observed by MeV 4He channeling spectrometry, the sample implanted at a dose of 2.5×1014 BF2 + cm-2 is amorphized from surface to a depth of about 90 nm among all as-implanted samples. Crystalline degradation and strain-relaxation of post-annealed Ge0.06Si0.94 samples become pronounced as the dose increases. Only the samples implanted at 3×1013 cm-2 do not visibly degrade nor relax during anneal at 800 °C. In the leakage current measurements, no serious leakage is found in most of the samples except for one which is annealed at 8000 °C for 30 min after implantation to a dose of 2.5×1014 cm-2. It is concluded that such a low dose of 3×1013 BF2 + cm-2 can be doped by implantation to conserve intrinsic strain of the pseudomorphic GeSi, while for high dose regime to meet the strain-relaxation, annealing at high temperatures over 900 °C is necessary to prevent serious leakages from occuring near relaxed GeSi/Si interfaces.

AB - Metastable pseudomorphic Ge0.06Si0.94 alloy layers grown by molecular beam epitaxy (MBE) on Si (100) substrates were implanted at room temperature by 70 keV BF2 + ions with three different doses of 3×1013, 1×1014, and 2.5×1014 cm-2. The implanted samples were subsequently annealed at 800 °C and 900 °C for 30 min in a vacuum tube furnace. Observed by MeV 4He channeling spectrometry, the sample implanted at a dose of 2.5×1014 BF2 + cm-2 is amorphized from surface to a depth of about 90 nm among all as-implanted samples. Crystalline degradation and strain-relaxation of post-annealed Ge0.06Si0.94 samples become pronounced as the dose increases. Only the samples implanted at 3×1013 cm-2 do not visibly degrade nor relax during anneal at 800 °C. In the leakage current measurements, no serious leakage is found in most of the samples except for one which is annealed at 8000 °C for 30 min after implantation to a dose of 2.5×1014 cm-2. It is concluded that such a low dose of 3×1013 BF2 + cm-2 can be doped by implantation to conserve intrinsic strain of the pseudomorphic GeSi, while for high dose regime to meet the strain-relaxation, annealing at high temperatures over 900 °C is necessary to prevent serious leakages from occuring near relaxed GeSi/Si interfaces.

UR - http://www.scopus.com/inward/record.url?scp=0032756665&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032756665&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(98)90559-6

DO - 10.1016/S0168-583X(98)90559-6

M3 - Article

AN - SCOPUS:0032756665

VL - 147

SP - 49

EP - 55

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -