Effects of CeO2 incorporation on the performance of a Ta diffusion barrier for Al metallization

Jaehwa Kim, Joon Seop Kwak, Dong Soo Yoon, Hong Koo Baik, Sung Man Lee

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Abstract

The effects of CeO2 incorporation on the performance of a Ta diffusion barrier in the Al/Si system were investigated in the temperature range of 450-550°C. When Ta film was deposited without CeO2 incorporation, the reaction between Ta and Al occurred at 500°C, leading to the formation of Al3Ta. In the case of CeO2-incorporated Ta barriers, however, the reaction between Ta and Al was suppressed up to 550°C. The suppression of the reaction of Ta with Al was attributed to the strong chemical bonding of Ta-Ce-O or Ta-O and the amorphous-like microstructure of the CeO2-incorporated Ta barrier, followed by the reduction of the chemical driving force for the initial stage of Al3Ta formation.

Original languageEnglish
Pages (from-to)2170-2174
Number of pages5
JournalJournal of Applied Physics
Volume85
Issue number4
DOIs
Publication statusPublished - 1999 Feb 15

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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