Effects of composition ratio on solution-processed InGaZnO thin-film transistors

Jeong Soo Lee, Seung Min Song, Soo Yeon Lee, Yong Hoon Kim, Jang Yeon Kwon, Min Koo Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We fabricated solution-processed IGZO TFTs with various composition ratio of precursors according to the contents of In, Ga, and Zn. Threshold voltage of solution-processed IGZO TFTs was-0.43 V, 3.86 V, and 11.12 V when the composition ratio was varied by 7:1:2, 6:3:1, and 5:1:4, respectively. Saturation mobility of solution-processed IGZO TFTs was 1.4 cm 2/V·sec, 0.84 cm2/V·sec, and 0.3 cm 2/V·sec with the composition ratio of 7:1:2, 6:3:1, and 5:1:4 respectively. When In composition ratio increased, the threshold voltage decreased and saturation mobility increased because of the increase of electron concentration. When Ga composition ratio increased, the off-current was decreased because of the suppression of formation of oxygen vacancies. When Zn composition ratio increased, the hysteresis was decreased because of the reduction of interstitial states between channel and insulator.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 14
Pages197-202
Number of pages6
Edition2
DOIs
Publication statusPublished - 2013 Oct 21
EventWide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting - Toronto, ON, Canada
Duration: 2013 May 122013 May 16

Publication series

NameECS Transactions
Number2
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherWide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period13/5/1213/5/16

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lee, J. S., Song, S. M., Lee, S. Y., Kim, Y. H., Kwon, J. Y., & Han, M. K. (2013). Effects of composition ratio on solution-processed InGaZnO thin-film transistors. In Wide-Bandgap Semiconductor Materials and Devices 14 (2 ed., pp. 197-202). (ECS Transactions; Vol. 53, No. 2). https://doi.org/10.1149/05302.0197ecst