Abstract
In this study, we characterized silicon oxide (SiO2) thin film prepared on polyethylene terephthalate (PET) substrates by electron-beam (e-beam) deposition for transparent barrier application. As the chamber temperature is increased from 30 to 110°C, the roughness increases while water vapor transmission rate (WVTR) decreases. Under these conditions, WVTR of PET can be reduced from a level of 0.57 g/m2/day (bare subtrate) to 0.05 g/m2/day after application of a 200-nm-thick SiO2 coating at 110°C. A more efficient way to improve permeation of PET was carried out by using a double sided coating of a 5-μm-thick parylene film. It was found that WVTR for PET substrates can be reduced to a level of -0.2 g/m2/day. The double-sided parylene coating on PET could contribute in lowering the stress of oxide film, which greatly improves the WVTR data. These results indicate that the Sip2/parylene/PET barrier coatings have a high potential for flexible organic light-emitting diode (OLED) applications.
| Original language | English |
|---|---|
| Pages (from-to) | L827-L829 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 45 |
| Issue number | 29-32 |
| DOIs | |
| Publication status | Published - 2006 Aug 11 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
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Effects of defects in SiO2 thin films prepared on polyethylene terephthalate by high-temperature E-beam deposition. / Han, Jin Woo; Kang, Hee Jin; Kim, Jong Hwan; Seo, Dae Shik.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 29-32, 11.08.2006, p. L827-L829.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of defects in SiO2 thin films prepared on polyethylene terephthalate by high-temperature E-beam deposition
AU - Han, Jin Woo
AU - Kang, Hee Jin
AU - Kim, Jong Hwan
AU - Seo, Dae Shik
PY - 2006/8/11
Y1 - 2006/8/11
N2 - In this study, we characterized silicon oxide (SiO2) thin film prepared on polyethylene terephthalate (PET) substrates by electron-beam (e-beam) deposition for transparent barrier application. As the chamber temperature is increased from 30 to 110°C, the roughness increases while water vapor transmission rate (WVTR) decreases. Under these conditions, WVTR of PET can be reduced from a level of 0.57 g/m2/day (bare subtrate) to 0.05 g/m2/day after application of a 200-nm-thick SiO2 coating at 110°C. A more efficient way to improve permeation of PET was carried out by using a double sided coating of a 5-μm-thick parylene film. It was found that WVTR for PET substrates can be reduced to a level of -0.2 g/m2/day. The double-sided parylene coating on PET could contribute in lowering the stress of oxide film, which greatly improves the WVTR data. These results indicate that the Sip2/parylene/PET barrier coatings have a high potential for flexible organic light-emitting diode (OLED) applications.
AB - In this study, we characterized silicon oxide (SiO2) thin film prepared on polyethylene terephthalate (PET) substrates by electron-beam (e-beam) deposition for transparent barrier application. As the chamber temperature is increased from 30 to 110°C, the roughness increases while water vapor transmission rate (WVTR) decreases. Under these conditions, WVTR of PET can be reduced from a level of 0.57 g/m2/day (bare subtrate) to 0.05 g/m2/day after application of a 200-nm-thick SiO2 coating at 110°C. A more efficient way to improve permeation of PET was carried out by using a double sided coating of a 5-μm-thick parylene film. It was found that WVTR for PET substrates can be reduced to a level of -0.2 g/m2/day. The double-sided parylene coating on PET could contribute in lowering the stress of oxide film, which greatly improves the WVTR data. These results indicate that the Sip2/parylene/PET barrier coatings have a high potential for flexible organic light-emitting diode (OLED) applications.
UR - http://www.scopus.com/inward/record.url?scp=34548546281&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34548546281&partnerID=8YFLogxK
U2 - 10.1143/JJAP.45.L827
DO - 10.1143/JJAP.45.L827
M3 - Article
AN - SCOPUS:34548546281
VL - 45
SP - L827-L829
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
SN - 0021-4922
IS - 29-32
ER -