Effects of deposition temperature on the properties of Zn 1-x Mg x O thin films

Deuk Kyu Hwang, Min Chang Jeong, Jae Min Myoung

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

A series of Zn 1-x Mg x O thin films with various deposition temperatures were prepared on sapphire(0001) substrates by radio frequency (rf) magnetron co-sputtering with ZnO and Mg targets. The Mg contents in Zn 1-x Mg x O films were controlled by the deposition temperature. Through transmittance measurements, it was observed that the shift of the absorption edge depended on the deposition temperature due to the difference in the surface diffusion of the deposited Mg atoms. Furthermore, the film deposited at 600°C exhibited the absorption edge at 289nm resulting in the bandgap widening to 4.28eV. From the X-ray diffraction (XRD) results, it was observed that all the films exhibited only the (0002) peaks indicating the single-phase Zn 1-x Mg x O without changing the wurtzite structure of ZnO. The dependency of crystalline quality and surface morphology of the Zn 1-x Mg x O films on the deposition temperature was discussed.

Original languageEnglish
Pages (from-to)217-222
Number of pages6
JournalApplied Surface Science
Volume225
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 30

Fingerprint

Thin films
Temperature
Surface diffusion
Aluminum Oxide
Sapphire
Surface morphology
Sputtering
Energy gap
Crystalline materials
X ray diffraction
Atoms
Substrates

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

@article{87122674f4d24679a021834fb62da3f3,
title = "Effects of deposition temperature on the properties of Zn 1-x Mg x O thin films",
abstract = "A series of Zn 1-x Mg x O thin films with various deposition temperatures were prepared on sapphire(0001) substrates by radio frequency (rf) magnetron co-sputtering with ZnO and Mg targets. The Mg contents in Zn 1-x Mg x O films were controlled by the deposition temperature. Through transmittance measurements, it was observed that the shift of the absorption edge depended on the deposition temperature due to the difference in the surface diffusion of the deposited Mg atoms. Furthermore, the film deposited at 600°C exhibited the absorption edge at 289nm resulting in the bandgap widening to 4.28eV. From the X-ray diffraction (XRD) results, it was observed that all the films exhibited only the (0002) peaks indicating the single-phase Zn 1-x Mg x O without changing the wurtzite structure of ZnO. The dependency of crystalline quality and surface morphology of the Zn 1-x Mg x O films on the deposition temperature was discussed.",
author = "Hwang, {Deuk Kyu} and Jeong, {Min Chang} and Myoung, {Jae Min}",
year = "2004",
month = "3",
day = "30",
doi = "10.1016/j.apsusc.2003.10.003",
language = "English",
volume = "225",
pages = "217--222",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "1-4",

}

Effects of deposition temperature on the properties of Zn 1-x Mg x O thin films . / Hwang, Deuk Kyu; Jeong, Min Chang; Myoung, Jae Min.

In: Applied Surface Science, Vol. 225, No. 1-4, 30.03.2004, p. 217-222.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of deposition temperature on the properties of Zn 1-x Mg x O thin films

AU - Hwang, Deuk Kyu

AU - Jeong, Min Chang

AU - Myoung, Jae Min

PY - 2004/3/30

Y1 - 2004/3/30

N2 - A series of Zn 1-x Mg x O thin films with various deposition temperatures were prepared on sapphire(0001) substrates by radio frequency (rf) magnetron co-sputtering with ZnO and Mg targets. The Mg contents in Zn 1-x Mg x O films were controlled by the deposition temperature. Through transmittance measurements, it was observed that the shift of the absorption edge depended on the deposition temperature due to the difference in the surface diffusion of the deposited Mg atoms. Furthermore, the film deposited at 600°C exhibited the absorption edge at 289nm resulting in the bandgap widening to 4.28eV. From the X-ray diffraction (XRD) results, it was observed that all the films exhibited only the (0002) peaks indicating the single-phase Zn 1-x Mg x O without changing the wurtzite structure of ZnO. The dependency of crystalline quality and surface morphology of the Zn 1-x Mg x O films on the deposition temperature was discussed.

AB - A series of Zn 1-x Mg x O thin films with various deposition temperatures were prepared on sapphire(0001) substrates by radio frequency (rf) magnetron co-sputtering with ZnO and Mg targets. The Mg contents in Zn 1-x Mg x O films were controlled by the deposition temperature. Through transmittance measurements, it was observed that the shift of the absorption edge depended on the deposition temperature due to the difference in the surface diffusion of the deposited Mg atoms. Furthermore, the film deposited at 600°C exhibited the absorption edge at 289nm resulting in the bandgap widening to 4.28eV. From the X-ray diffraction (XRD) results, it was observed that all the films exhibited only the (0002) peaks indicating the single-phase Zn 1-x Mg x O without changing the wurtzite structure of ZnO. The dependency of crystalline quality and surface morphology of the Zn 1-x Mg x O films on the deposition temperature was discussed.

UR - http://www.scopus.com/inward/record.url?scp=1342287138&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1342287138&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2003.10.003

DO - 10.1016/j.apsusc.2003.10.003

M3 - Article

AN - SCOPUS:1342287138

VL - 225

SP - 217

EP - 222

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -