A series of Zn 1-x Mg x O thin films with various deposition temperatures were prepared on sapphire(0001) substrates by radio frequency (rf) magnetron co-sputtering with ZnO and Mg targets. The Mg contents in Zn 1-x Mg x O films were controlled by the deposition temperature. Through transmittance measurements, it was observed that the shift of the absorption edge depended on the deposition temperature due to the difference in the surface diffusion of the deposited Mg atoms. Furthermore, the film deposited at 600°C exhibited the absorption edge at 289nm resulting in the bandgap widening to 4.28eV. From the X-ray diffraction (XRD) results, it was observed that all the films exhibited only the (0002) peaks indicating the single-phase Zn 1-x Mg x O without changing the wurtzite structure of ZnO. The dependency of crystalline quality and surface morphology of the Zn 1-x Mg x O films on the deposition temperature was discussed.
Bibliographical noteFunding Information:
This work was supported by Bluetron Co. Ltd.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films