The adjustability of the incorporation and distribution of P dopants in Si materials has led to their application in various electronic and photovoltaic devices. In particular, P-doped Si films have been investigated for dopant-induced phenomena such as oxidation enhancement and dopant segregation during thermal oxidation. Despite their technical as well as scientific importance of dopant behaviors in P-doped Si films, these were hardly observed due to low P incorporation. In this study, we prepared and oxidized P-doped epitaxial Si (Si:P) films grown on the Si(100) substrate using in-situ P-doped deposition technique to incorporate high P concentration up to 9.6% (4.8 × 1021 cm−3) in the films, exceeding solid solubility limits (~3 × 1020 cm−3). We found that in oxidized samples with P concentration greater than 6.2%, defects were generated in the near-surface region of Si:P layers and segregated P was observed at the defected areas. The chemical bonding states of P at the oxidized Si:P film increased in the P 2p peak intensity at the interface between the oxide and the Si:P layer, indicating P segregation at this interface. In the strain states of Si:P films, the decrease in the out-of-plane lattice parameter was observed, while maintaining the constant in-plane lattice parameter, implying strain release due to decreased P concentration in the Si:P layer after dry oxidation.
Bibliographical noteFunding Information:
This work was supported by the Brain Korea 21 Plus Projects through the National Research Foundation (NRF) funded by the Ministry of Education of Korea.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry