Effects of dopant concentration on microstructure and strain states of in-situ phosphorus-doped epitaxial silicon films during dry oxidation

H. Y. Ryu, M. Lee, D. H. Ko

Research output: Contribution to journalArticlepeer-review

Abstract

The adjustability of the incorporation and distribution of P dopants in Si materials has led to their application in various electronic and photovoltaic devices. In particular, P-doped Si films have been investigated for dopant-induced phenomena such as oxidation enhancement and dopant segregation during thermal oxidation. Despite their technical as well as scientific importance of dopant behaviors in P-doped Si films, these were hardly observed due to low P incorporation. In this study, we prepared and oxidized P-doped epitaxial Si (Si:P) films grown on the Si(100) substrate using in-situ P-doped deposition technique to incorporate high P concentration up to 9.6% (4.8 × 1021 cm−3) in the films, exceeding solid solubility limits (~3 × 1020 cm−3). We found that in oxidized samples with P concentration greater than 6.2%, defects were generated in the near-surface region of Si:P layers and segregated P was observed at the defected areas. The chemical bonding states of P at the oxidized Si:P film increased in the P 2p peak intensity at the interface between the oxide and the Si:P layer, indicating P segregation at this interface. In the strain states of Si:P films, the decrease in the out-of-plane lattice parameter was observed, while maintaining the constant in-plane lattice parameter, implying strain release due to decreased P concentration in the Si:P layer after dry oxidation.

Original languageEnglish
Article number138208
JournalThin Solid Films
Volume709
DOIs
Publication statusPublished - 2020 Sep 1

Bibliographical note

Funding Information:
This work was supported by the Brain Korea 21 Plus Projects through the National Research Foundation (NRF) funded by the Ministry of Education of Korea.

Publisher Copyright:
© 2020

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Effects of dopant concentration on microstructure and strain states of in-situ phosphorus-doped epitaxial silicon films during dry oxidation'. Together they form a unique fingerprint.

Cite this