Effects of dopant ion and Mn valence state in the La1-x A x MnO3 (A=Sr,Ba) colossal magnetoresistance films

Sun Gyu Choi, Seok Joo Wang, Hyung Ho Park, Munpyo Hong, Kwang Ho Kwon

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The structural and electrical properties of Mn-based colossal magnetoresistance (CMR) thin films with controlled tolerance factor and Mn ion valance ratio were studied using crystal structure and chemical bonding character analyses. La0.7 Sr0.3 MnO3, La 0.7 Ba0.3 MnO3, and La0.82 Ba 0.18 MnO3 thin films with different contents of divalent cations and Mn3+ / Mn4+ ratios were deposited on amorphous SiO2 /Si substrate by rf magnetron sputtering at a substrate temperature of 350 °C. The films showed the same crystalline structure as the pseudocubic structure. The change in the sheet resistance of films was analyzed according to strain state of the unit cell, chemical bonding character of Mn-O, and Mn3+ / Mn4+ ratio controlling the Mn 3+ - O2- - Mn4+ conducting path. Mn L -edge x-ray absorption spectra revealed that the Mn3+ / Mn4+ ratio changed according to different compositions of Sr or Ba and the Mn 2p core level x-ray photoelectron spectra showed that the Mn 2p binding energy was affected by the covalence of the Mn-O bond and Mn3+ / Mn4+ ratio. In addition, O K -edge x-ray absorption spectra showed covalently mixed Mn 3d and O 2p states and matched well with the resistivity changes of CMR films. Temperature coefficient of resistance values were obtained at approximately -2.16%/K to -2.46%/K of the CMR films and were correct for infrared sensor applications.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume28
Issue number1
DOIs
Publication statusPublished - 2010 Jan 15

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Colossal magnetoresistance
Doping (additives)
Ions
valence
x ray spectra
x ray absorption
X rays
Absorption spectra
ions
covalence
absorption spectra
Thin films
Core levels
Sheet resistance
Divalent Cations
Substrates
thin films
Photoelectrons
Binding energy
Magnetron sputtering

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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title = "Effects of dopant ion and Mn valence state in the La1-x A x MnO3 (A=Sr,Ba) colossal magnetoresistance films",
abstract = "The structural and electrical properties of Mn-based colossal magnetoresistance (CMR) thin films with controlled tolerance factor and Mn ion valance ratio were studied using crystal structure and chemical bonding character analyses. La0.7 Sr0.3 MnO3, La 0.7 Ba0.3 MnO3, and La0.82 Ba 0.18 MnO3 thin films with different contents of divalent cations and Mn3+ / Mn4+ ratios were deposited on amorphous SiO2 /Si substrate by rf magnetron sputtering at a substrate temperature of 350 °C. The films showed the same crystalline structure as the pseudocubic structure. The change in the sheet resistance of films was analyzed according to strain state of the unit cell, chemical bonding character of Mn-O, and Mn3+ / Mn4+ ratio controlling the Mn 3+ - O2- - Mn4+ conducting path. Mn L -edge x-ray absorption spectra revealed that the Mn3+ / Mn4+ ratio changed according to different compositions of Sr or Ba and the Mn 2p core level x-ray photoelectron spectra showed that the Mn 2p binding energy was affected by the covalence of the Mn-O bond and Mn3+ / Mn4+ ratio. In addition, O K -edge x-ray absorption spectra showed covalently mixed Mn 3d and O 2p states and matched well with the resistivity changes of CMR films. Temperature coefficient of resistance values were obtained at approximately -2.16{\%}/K to -2.46{\%}/K of the CMR films and were correct for infrared sensor applications.",
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Effects of dopant ion and Mn valence state in the La1-x A x MnO3 (A=Sr,Ba) colossal magnetoresistance films. / Choi, Sun Gyu; Wang, Seok Joo; Park, Hyung Ho; Hong, Munpyo; Kwon, Kwang Ho.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 28, No. 1, 15.01.2010, p. 1-5.

Research output: Contribution to journalArticle

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AU - Choi, Sun Gyu

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N2 - The structural and electrical properties of Mn-based colossal magnetoresistance (CMR) thin films with controlled tolerance factor and Mn ion valance ratio were studied using crystal structure and chemical bonding character analyses. La0.7 Sr0.3 MnO3, La 0.7 Ba0.3 MnO3, and La0.82 Ba 0.18 MnO3 thin films with different contents of divalent cations and Mn3+ / Mn4+ ratios were deposited on amorphous SiO2 /Si substrate by rf magnetron sputtering at a substrate temperature of 350 °C. The films showed the same crystalline structure as the pseudocubic structure. The change in the sheet resistance of films was analyzed according to strain state of the unit cell, chemical bonding character of Mn-O, and Mn3+ / Mn4+ ratio controlling the Mn 3+ - O2- - Mn4+ conducting path. Mn L -edge x-ray absorption spectra revealed that the Mn3+ / Mn4+ ratio changed according to different compositions of Sr or Ba and the Mn 2p core level x-ray photoelectron spectra showed that the Mn 2p binding energy was affected by the covalence of the Mn-O bond and Mn3+ / Mn4+ ratio. In addition, O K -edge x-ray absorption spectra showed covalently mixed Mn 3d and O 2p states and matched well with the resistivity changes of CMR films. Temperature coefficient of resistance values were obtained at approximately -2.16%/K to -2.46%/K of the CMR films and were correct for infrared sensor applications.

AB - The structural and electrical properties of Mn-based colossal magnetoresistance (CMR) thin films with controlled tolerance factor and Mn ion valance ratio were studied using crystal structure and chemical bonding character analyses. La0.7 Sr0.3 MnO3, La 0.7 Ba0.3 MnO3, and La0.82 Ba 0.18 MnO3 thin films with different contents of divalent cations and Mn3+ / Mn4+ ratios were deposited on amorphous SiO2 /Si substrate by rf magnetron sputtering at a substrate temperature of 350 °C. The films showed the same crystalline structure as the pseudocubic structure. The change in the sheet resistance of films was analyzed according to strain state of the unit cell, chemical bonding character of Mn-O, and Mn3+ / Mn4+ ratio controlling the Mn 3+ - O2- - Mn4+ conducting path. Mn L -edge x-ray absorption spectra revealed that the Mn3+ / Mn4+ ratio changed according to different compositions of Sr or Ba and the Mn 2p core level x-ray photoelectron spectra showed that the Mn 2p binding energy was affected by the covalence of the Mn-O bond and Mn3+ / Mn4+ ratio. In addition, O K -edge x-ray absorption spectra showed covalently mixed Mn 3d and O 2p states and matched well with the resistivity changes of CMR films. Temperature coefficient of resistance values were obtained at approximately -2.16%/K to -2.46%/K of the CMR films and were correct for infrared sensor applications.

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