Effects of electrical characteristics on the non-rectangular gate structure variations for the multifinger MOSFETs

Chulhyun Park, Youngkyu Song, Jung Han Kang, Seong Ook Jung, Ilgu Yun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, modeling methodology of electrical characteristics for non-rectangular gate structured multifinger metal-oxide-semiconductor field-effect transistors based on minimum channel length is proposed. The test structures are fabricated and the parasitic model parameters are extracted using the measured data for the proposed model. The proposed model can support better physical explanation than the previously presented integrated length model. The proposed model can precisely explain the electrical characteristics and is supported by theoretical equations for non-rectangular gates, such as the threshold voltage, the saturation voltage, the saturation current, and the leakage current. However, the previous integrated length model cannot sufficiently explain the electrical characteristics for non-rectangular gates although it is sustained by theoretical equations. Furthermore, this paper shows the relationship between gate poly area and the electrical characteristics. As a result, the electrical characteristics are dependent on the variation of the minimum of the gate length, rather than the profile of gate length variation.

Original languageEnglish
Article number5725174
Pages (from-to)352-358
Number of pages7
JournalIEEE Transactions on Components, Packaging and Manufacturing Technology
Volume1
Issue number3
DOIs
Publication statusPublished - 2011 Dec 1

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MOSFET devices
Threshold voltage
Leakage currents
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

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abstract = "In this paper, modeling methodology of electrical characteristics for non-rectangular gate structured multifinger metal-oxide-semiconductor field-effect transistors based on minimum channel length is proposed. The test structures are fabricated and the parasitic model parameters are extracted using the measured data for the proposed model. The proposed model can support better physical explanation than the previously presented integrated length model. The proposed model can precisely explain the electrical characteristics and is supported by theoretical equations for non-rectangular gates, such as the threshold voltage, the saturation voltage, the saturation current, and the leakage current. However, the previous integrated length model cannot sufficiently explain the electrical characteristics for non-rectangular gates although it is sustained by theoretical equations. Furthermore, this paper shows the relationship between gate poly area and the electrical characteristics. As a result, the electrical characteristics are dependent on the variation of the minimum of the gate length, rather than the profile of gate length variation.",
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Effects of electrical characteristics on the non-rectangular gate structure variations for the multifinger MOSFETs. / Park, Chulhyun; Song, Youngkyu; Kang, Jung Han; Jung, Seong Ook; Yun, Ilgu.

In: IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 1, No. 3, 5725174, 01.12.2011, p. 352-358.

Research output: Contribution to journalArticle

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