Effects of film stress modulation using TiN metal gate on stress engineering and its impact on device characteristics in metal gate/ high-κ dielectric SOI FinFETs

Chang Yong Kang, Ji Woon Yang, Jungwoo Oh, Rino Choi, Young Jun Suh, H. C. Floresca, Jiyoung Kim, Moon Kim, Byoung Hun Lee, Hsing Huang Tseng, Raj Jammy

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In this letter, the effects of TiN-induced strain engineering on device characteristics for a metal gate/high-κ silicon-on-insulator fin-shaped field-effect transistors were studied. From a convergent-beam electron-diffraction analysis and simulation study, a 3-nm TiN electrode was found to lead to significantly higher tensile stress on the Si substrate than a 20-nm TiN electrode. This high stress-induced fast bulk carrier generation results in the transient current-time characteristics. Therefore, 3- and 20-nm TiN electrodes are the excellent choice for nMOSFETs and pMOSFETs, respectively, which is from the standpoint of strain engineering, threshold voltage (Vth ), and performance. Due to the metal-induced strain, Idsat improvements of 15% and 12% for nMOSFETs and pMOSFETs, respectively, were achieved.

Original languageEnglish
Pages (from-to)487-490
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number5
DOIs
Publication statusPublished - 2008 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Effects of film stress modulation using TiN metal gate on stress engineering and its impact on device characteristics in metal gate/ high-κ dielectric SOI FinFETs'. Together they form a unique fingerprint.

Cite this