Effects of film stress modulation using TiN metal gate on stress engineering and its impact on device characteristics in metal gate/ high-κ dielectric SOI FinFETs

Chang Yong Kang, Ji Woon Yang, Jungwoo Oh, Rino Choi, Young Jun Suh, H. C. Floresca, Jiyoung Kim, Moon Kim, Byoung Hun Lee, Hsing Huang Tseng, Raj Jammy

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

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Chemical Compounds

Engineering & Materials Science