Effects of fluorine plasma treatment on the electronic structure of plasma-enhanced atomic layer deposition HfO2

W. J. Maeng, J. Y. Son, Hyungjun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We investigated the effects of fluorine treatments on the electrical properties and electronic structures of plasma-enhanced atomic layer deposition HfO2 gate oxides, depending on the treatment process. Pre- and postoxide-deposition fluorine treatments were carried out using CF4 plasma. Improved dielectric properties were achieved by predeposition treatment, while degradation of electrical properties was observed for postdeposition treatment. Based on the electronic structure analysis using X-ray photoemission spectroscopy and near-edge X-ray absorption fine structures, we found that the enhanced dielectric properties of the pretreated HfO2 are induced by the defect passivation and conduction-band offset increase.

Original languageEnglish
Pages (from-to)G33-G36
JournalJournal of the Electrochemical Society
Volume156
Issue number5
DOIs
Publication statusPublished - 2009 Apr 8

Fingerprint

Fluorine
Atomic layer deposition
atomic layer epitaxy
Dielectric properties
Electronic structure
fluorine
Electric properties
electronic structure
Plasmas
X ray absorption
Photoelectron spectroscopy
X ray spectroscopy
Conduction bands
Passivation
Oxides
dielectric properties
Degradation
Defects
electrical properties
passivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

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Effects of fluorine plasma treatment on the electronic structure of plasma-enhanced atomic layer deposition HfO2. / Maeng, W. J.; Son, J. Y.; Kim, Hyungjun.

In: Journal of the Electrochemical Society, Vol. 156, No. 5, 08.04.2009, p. G33-G36.

Research output: Contribution to journalArticle

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