Abstract
We investigated the effects of fluorine treatments on the electrical properties and electronic structures of plasma-enhanced atomic layer deposition HfO2 gate oxides, depending on the treatment process. Pre- and postoxide-deposition fluorine treatments were carried out using CF4 plasma. Improved dielectric properties were achieved by predeposition treatment, while degradation of electrical properties was observed for postdeposition treatment. Based on the electronic structure analysis using X-ray photoemission spectroscopy and near-edge X-ray absorption fine structures, we found that the enhanced dielectric properties of the pretreated HfO2 are induced by the defect passivation and conduction-band offset increase.
| Original language | English |
|---|---|
| Pages (from-to) | G33-G36 |
| Journal | Journal of the Electrochemical Society |
| Volume | 156 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2009 Apr 8 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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Effects of fluorine plasma treatment on the electronic structure of plasma-enhanced atomic layer deposition HfO2. / Maeng, W. J.; Son, J. Y.; Kim, Hyungjun.
In: Journal of the Electrochemical Society, Vol. 156, No. 5, 08.04.2009, p. G33-G36.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of fluorine plasma treatment on the electronic structure of plasma-enhanced atomic layer deposition HfO2
AU - Maeng, W. J.
AU - Son, J. Y.
AU - Kim, Hyungjun
PY - 2009/4/8
Y1 - 2009/4/8
N2 - We investigated the effects of fluorine treatments on the electrical properties and electronic structures of plasma-enhanced atomic layer deposition HfO2 gate oxides, depending on the treatment process. Pre- and postoxide-deposition fluorine treatments were carried out using CF4 plasma. Improved dielectric properties were achieved by predeposition treatment, while degradation of electrical properties was observed for postdeposition treatment. Based on the electronic structure analysis using X-ray photoemission spectroscopy and near-edge X-ray absorption fine structures, we found that the enhanced dielectric properties of the pretreated HfO2 are induced by the defect passivation and conduction-band offset increase.
AB - We investigated the effects of fluorine treatments on the electrical properties and electronic structures of plasma-enhanced atomic layer deposition HfO2 gate oxides, depending on the treatment process. Pre- and postoxide-deposition fluorine treatments were carried out using CF4 plasma. Improved dielectric properties were achieved by predeposition treatment, while degradation of electrical properties was observed for postdeposition treatment. Based on the electronic structure analysis using X-ray photoemission spectroscopy and near-edge X-ray absorption fine structures, we found that the enhanced dielectric properties of the pretreated HfO2 are induced by the defect passivation and conduction-band offset increase.
UR - http://www.scopus.com/inward/record.url?scp=63649083660&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=63649083660&partnerID=8YFLogxK
U2 - 10.1149/1.3089976
DO - 10.1149/1.3089976
M3 - Article
AN - SCOPUS:63649083660
VL - 156
SP - G33-G36
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 5
ER -