Effects of growth temperature on Mg-doped GaN epitaxial films grown by plasma-assisted molecular beam epitaxy

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, p-type GaN films were grown by plasma assisted molecular beam epitaxy (PAMBE) at temperatures between 650°C and 700°C using Mg without postgrowth treatment. Growth temperature was found to be a critical parameter determining the surface morphology, crystallinity, and electrical properties of the resulting film. The concentration of Mg incorporated into the film increased with increasing growth temperature.

Original languageEnglish
Pages (from-to)450-456
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume18
Issue number2
DOIs
Publication statusPublished - 2000 Mar 1

Fingerprint

Epitaxial films
Growth temperature
Molecular beam epitaxy
molecular beam epitaxy
Plasmas
Surface morphology
temperature
crystallinity
Electric properties
electrical properties
Temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

@article{1986f1f5b8ac43c89f6afbda74750fb5,
title = "Effects of growth temperature on Mg-doped GaN epitaxial films grown by plasma-assisted molecular beam epitaxy",
abstract = "In this study, p-type GaN films were grown by plasma assisted molecular beam epitaxy (PAMBE) at temperatures between 650°C and 700°C using Mg without postgrowth treatment. Growth temperature was found to be a critical parameter determining the surface morphology, crystallinity, and electrical properties of the resulting film. The concentration of Mg incorporated into the film increased with increasing growth temperature.",
author = "Myoung, {Jae Min} and K. Kim",
year = "2000",
month = "3",
day = "1",
doi = "10.1116/1.582207",
language = "English",
volume = "18",
pages = "450--456",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "2",

}

TY - JOUR

T1 - Effects of growth temperature on Mg-doped GaN epitaxial films grown by plasma-assisted molecular beam epitaxy

AU - Myoung, Jae Min

AU - Kim, K.

PY - 2000/3/1

Y1 - 2000/3/1

N2 - In this study, p-type GaN films were grown by plasma assisted molecular beam epitaxy (PAMBE) at temperatures between 650°C and 700°C using Mg without postgrowth treatment. Growth temperature was found to be a critical parameter determining the surface morphology, crystallinity, and electrical properties of the resulting film. The concentration of Mg incorporated into the film increased with increasing growth temperature.

AB - In this study, p-type GaN films were grown by plasma assisted molecular beam epitaxy (PAMBE) at temperatures between 650°C and 700°C using Mg without postgrowth treatment. Growth temperature was found to be a critical parameter determining the surface morphology, crystallinity, and electrical properties of the resulting film. The concentration of Mg incorporated into the film increased with increasing growth temperature.

UR - http://www.scopus.com/inward/record.url?scp=0034155665&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034155665&partnerID=8YFLogxK

U2 - 10.1116/1.582207

DO - 10.1116/1.582207

M3 - Article

AN - SCOPUS:0034155665

VL - 18

SP - 450

EP - 456

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 2

ER -