In this study, p-type GaN films were grown by plasma assisted molecular beam epitaxy (PAMBE) at temperatures between 650°C and 700°C using Mg without postgrowth treatment. Growth temperature was found to be a critical parameter determining the surface morphology, crystallinity, and electrical properties of the resulting film. The concentration of Mg incorporated into the film increased with increasing growth temperature.
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2000 Mar 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films