Effects of growth temperature on the properties of ZnO/GaAs prepared by metalorganic chemical vapor deposition

Kyu Hyun Bang, Deuk Kyu Hwang, Sang Wook Lim, Jae Min Myoung

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

A series of ZnO films were grown on GaAs(0 0 1) substrates at different growth temperatures in the range 250-720°C by metalorganic chemical vapor depostion. Field emission scanning electron microscopy was utilized to investigate the surface morphology of ZnO films. The crystallinity of ZnO films was investigated by the double-crystal X-ray diffractometry. The optical and electrical properties of ZnO films were also investigated using room-temperature photoluminescence and Hall measurements. Arrhenius plots of the growth rate versus reciprocal temperature revealed the kinetically limited growth behavior depending on the growth temperature. It was found that the surface morphology, structural, optical and electrical properties of the films were improved with increasing growth temperature to 650°C. All the properties of the film grown at 720°C were degraded due to the decomposition of ZnO film.

Original languageEnglish
Pages (from-to)437-443
Number of pages7
JournalJournal of Crystal Growth
Volume250
Issue number3-4
DOIs
Publication statusPublished - 2003 Apr 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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