Abstract
A series of ZnO films were grown on GaAs(0 0 1) substrates at different growth temperatures in the range 250-720°C by metalorganic chemical vapor depostion. Field emission scanning electron microscopy was utilized to investigate the surface morphology of ZnO films. The crystallinity of ZnO films was investigated by the double-crystal X-ray diffractometry. The optical and electrical properties of ZnO films were also investigated using room-temperature photoluminescence and Hall measurements. Arrhenius plots of the growth rate versus reciprocal temperature revealed the kinetically limited growth behavior depending on the growth temperature. It was found that the surface morphology, structural, optical and electrical properties of the films were improved with increasing growth temperature to 650°C. All the properties of the film grown at 720°C were degraded due to the decomposition of ZnO film.
| Original language | English |
|---|---|
| Pages (from-to) | 437-443 |
| Number of pages | 7 |
| Journal | Journal of Crystal Growth |
| Volume | 250 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - 2003 Apr |
Bibliographical note
Funding Information:This work was supported by Bluetron Co. Ltd. under Grant No. 2001-2-0422.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry