Effects of guard-ring structures on the performance of silicon avalanche photodetectors fabricated with standard CMOS technology

Myung Jae Lee, Holger Rücker, Woo-Young Choi

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Abstract

We investigate the effects of guard-ring (GR) structures on the performance of silicon avalanche photodetectors (APDs) fabricated with the standard complementary metal-oxide-semiconductor (CMOS) technology. Four types of CMOS-compatible APDs (CMOS-APDs) based on the p +/n-well junction with different GR structures are fabricated, and their electric-field profiles are simulated and analyzed. Current characteristics, responsivity, avalanche gain, and photodetection bandwidth for CMOS-APDs are measured and compared. It is demonstrated that the GR realized with shallow trench isolation provides the best CMOS-APD performance.

Original languageEnglish
Article number6087265
Pages (from-to)80-82
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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