Effects of H-ion irradiation on the properties of a spin valve

Yoonsung Han, Sanghoon Kim, Sangho Lee, Jongill Hong, Dong Ryeol Lee, Hyun Hwi Lee, Yong Jun Park, Hoojeong Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Irradiation with much less than 1.0 keV H ions significantly improved the properties of IrMn-based spin valves. The giant magnetoresistance (GMR) was increased from 8.1% to 9.6% and the exchange bias field from 355 to 565 Oe after irradiation at 550 eV. The irradiation achieved even higher GMR than that achieved by field annealing: 9.6% vs 8.7%. We attribute this enhancement to strong (111) textures of the IrMn antiferromagnet and CoFeCuCoFeNiFe layers, as well as to a narrow mosaic spread of the (111) IrMn, both of which were developed by momentum transferred during the ion bombardment. The irradiated spin valve showed exchange bias as large as and (111) textures as strong as those of the field-annealed spin valve. The significant difference in the GMR values of the irradiated versus the field-annealed spin valves was probably due to different degrees of intermixing between layers. In the case of irradiation, the low energy of the lightest H ion likely resulted in little intermixing and, hence, the interfaces were largely left intact, which kept the GMR values high.

Original languageEnglish
Article number07B521
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
Publication statusPublished - 2008 Apr 21

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ion irradiation
irradiation
textures
ions
bombardment
momentum
annealing
augmentation
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Han, Y., Kim, S., Lee, S., Hong, J., Lee, D. R., Lee, H. H., ... Lee, H. (2008). Effects of H-ion irradiation on the properties of a spin valve. Journal of Applied Physics, 103(7), [07B521]. https://doi.org/10.1063/1.2837599
Han, Yoonsung ; Kim, Sanghoon ; Lee, Sangho ; Hong, Jongill ; Lee, Dong Ryeol ; Lee, Hyun Hwi ; Park, Yong Jun ; Lee, Hoojeong. / Effects of H-ion irradiation on the properties of a spin valve. In: Journal of Applied Physics. 2008 ; Vol. 103, No. 7.
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Han, Y, Kim, S, Lee, S, Hong, J, Lee, DR, Lee, HH, Park, YJ & Lee, H 2008, 'Effects of H-ion irradiation on the properties of a spin valve', Journal of Applied Physics, vol. 103, no. 7, 07B521. https://doi.org/10.1063/1.2837599

Effects of H-ion irradiation on the properties of a spin valve. / Han, Yoonsung; Kim, Sanghoon; Lee, Sangho; Hong, Jongill; Lee, Dong Ryeol; Lee, Hyun Hwi; Park, Yong Jun; Lee, Hoojeong.

In: Journal of Applied Physics, Vol. 103, No. 7, 07B521, 21.04.2008.

Research output: Contribution to journalArticle

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AU - Han, Yoonsung

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AU - Lee, Sangho

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AU - Park, Yong Jun

AU - Lee, Hoojeong

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N2 - Irradiation with much less than 1.0 keV H ions significantly improved the properties of IrMn-based spin valves. The giant magnetoresistance (GMR) was increased from 8.1% to 9.6% and the exchange bias field from 355 to 565 Oe after irradiation at 550 eV. The irradiation achieved even higher GMR than that achieved by field annealing: 9.6% vs 8.7%. We attribute this enhancement to strong (111) textures of the IrMn antiferromagnet and CoFeCuCoFeNiFe layers, as well as to a narrow mosaic spread of the (111) IrMn, both of which were developed by momentum transferred during the ion bombardment. The irradiated spin valve showed exchange bias as large as and (111) textures as strong as those of the field-annealed spin valve. The significant difference in the GMR values of the irradiated versus the field-annealed spin valves was probably due to different degrees of intermixing between layers. In the case of irradiation, the low energy of the lightest H ion likely resulted in little intermixing and, hence, the interfaces were largely left intact, which kept the GMR values high.

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