Effects of H 2 ambient annealing in fully 0 0 2-textured ZnO:Ga thin films grown on glass substrates using RF magnetron co-sputter deposition

Sungyeon Kim, Jungmok Seo, Hyeon Woo Jang, Jungsik Bang, Woong Lee, Taeyoon Lee, Jae Min Myoung

Research output: Contribution to journalArticle

26 Citations (Scopus)


Gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates using RF magnetron co-sputtering, followed by H 2 ambient annealing at 623 K to explore a possibility of steady and low-cost process for fabricating transparent electrodes. While it was observed that the ZnO:Ga thin films were densely packed c-axis oriented self-textured structures, in the as-deposited state, the films contained Ga 2 O 3 and ZnGa 2 O 4 which had adverse effect on the electrical properties. On the other hand, post-annealing in H 2 ambient improved the electrical properties significantly via reduction of Ga 2 O 3 and ZnGa 2 O 4 to release elemental Ga which subsequently acted as substitutional dopant increasing the carrier concentration by two orders of magnitude. Transmittance of the ZnO:Ga thin films were all over 90% that of glass while the optical band gap varied in accordance with the carrier concentrations due to changes in Fermi level. Experimental observation in this study suggests that transparent conductive oxide (TCO) films based on Ga doped ZnO with good electrical and optical properties can be realized via simple low-cost process.

Original languageEnglish
Pages (from-to)4616-4622
Number of pages7
JournalApplied Surface Science
Issue number8
Publication statusPublished - 2009 Feb 1


All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this