Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon

Kwang Ho Kwon; Bo Woo Kim; Hyung Ho Park; Jin Yeong Kang; Gun Yung Yeom

Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon

Kwang Ho Kwon, Bo Woo Kim, Hyung Ho Park, Jin Yeong Kang, Gun Yung Yeom

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effects of SF₆ and NF₃ gas plasma treatments, and successive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF₃/C₂F₆ plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF₃ and SF₆ plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF₃, SF₆ plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.

Original language	English
Title of host publication	Diagnostic Techniques for Semiconductor Materials Processing
Publisher	Publ by Materials Research Society
Pages	481-486
Number of pages	6
ISBN (Print)	1558992235
Publication status	Published - 1994
Event	Proceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA Duration: 1993 Nov 29 → 1993 Dec 2

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	324
ISSN (Print)	0272-9172

Other

Other	Proceedings of the 1993 Fall Meeting of the Materials Research Society
City	Boston, MA, USA
Period	93/11/29 → 93/12/2

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Kwon, K. H., Kim, B. W., Park, H. H., Kang, J. Y., & Yeom, G. Y. (1994). Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon. In Diagnostic Techniques for Semiconductor Materials Processing (pp. 481-486). (Materials Research Society Symposium Proceedings; Vol. 324). Publ by Materials Research Society.

@inproceedings{1cab10091572440e840d241718fb3211,

title = "Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon",

abstract = "The effects of SF6 and NF3 gas plasma treatments, and successive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF3/C2F6 plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF3 and SF6 plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF3, SF6 plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.",

author = "Kwon, {Kwang Ho} and Kim, {Bo Woo} and Park, {Hyung Ho} and Kang, {Jin Yeong} and Yeom, {Gun Yung}",

year = "1994",

language = "English",

isbn = "1558992235",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "481--486",

booktitle = "Diagnostic Techniques for Semiconductor Materials Processing",

note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 02-12-1993",

}

Kwon, KH, Kim, BW, Park, HH, Kang, JY & Yeom, GY 1994, Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon. in Diagnostic Techniques for Semiconductor Materials Processing. Materials Research Society Symposium Proceedings, vol. 324, Publ by Materials Research Society, pp. 481-486, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 93/11/29.

Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon. / Kwon, Kwang Ho; Kim, Bo Woo; Park, Hyung Ho; Kang, Jin Yeong; Yeom, Gun Yung.

Diagnostic Techniques for Semiconductor Materials Processing. Publ by Materials Research Society, 1994. p. 481-486 (Materials Research Society Symposium Proceedings; Vol. 324).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon

AU - Kwon, Kwang Ho

AU - Kim, Bo Woo

AU - Park, Hyung Ho

AU - Kang, Jin Yeong

AU - Yeom, Gun Yung

PY - 1994

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N2 - The effects of SF6 and NF3 gas plasma treatments, and successive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF3/C2F6 plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF3 and SF6 plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF3, SF6 plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.

AB - The effects of SF6 and NF3 gas plasma treatments, and successive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF3/C2F6 plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF3 and SF6 plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF3, SF6 plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.

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SN - 1558992235

T3 - Materials Research Society Symposium Proceedings

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BT - Diagnostic Techniques for Semiconductor Materials Processing

PB - Publ by Materials Research Society

T2 - Proceedings of the 1993 Fall Meeting of the Materials Research Society

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