TY - GEN
T1 - Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon
AU - Kwon, Kwang Ho
AU - Kim, Bo Woo
AU - Park, Hyung Ho
AU - Kang, Jin Yeong
AU - Yeom, Gun Yung
N1 - Copyright:
Copyright 2003 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 1994
Y1 - 1994
N2 - The effects of SF6 and NF3 gas plasma treatments, and successive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF3/C2F6 plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF3 and SF6 plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF3, SF6 plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.
AB - The effects of SF6 and NF3 gas plasma treatments, and successive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF3/C2F6 plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF3 and SF6 plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF3, SF6 plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.
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M3 - Conference contribution
AN - SCOPUS:0027969788
SN - 1558992235
T3 - Materials Research Society Symposium Proceedings
SP - 481
EP - 486
BT - Diagnostic Techniques for Semiconductor Materials Processing
PB - Publ by Materials Research Society
T2 - Proceedings of the 1993 Fall Meeting of the Materials Research Society
Y2 - 29 November 1993 through 2 December 1993
ER -