Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon

Kwang Ho Kwon, Bo Woo Kim, Hyung Ho Park, Jin Yeong Kang, Gun Yung Yeom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of SF6 and NF3 gas plasma treatments, and successive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF3/C2F6 plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF3 and SF6 plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF3, SF6 plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.

Original languageEnglish
Title of host publicationDiagnostic Techniques for Semiconductor Materials Processing
PublisherPubl by Materials Research Society
Pages481-486
Number of pages6
Volume324
ISBN (Print)1558992235
Publication statusPublished - 1994 Jan 1
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: 1993 Nov 291993 Dec 2

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period93/11/2993/12/2

Fingerprint

Plasma Gases
Halogens
Silicon
halogens
Heat treatment
Ions
Plasmas
silicon
Secondary ion mass spectrometry
Gases
gases
ions
X ray photoelectron spectroscopy
secondary ion mass spectrometry
Recovery
recovery
photoelectron spectroscopy
Impurities
x rays
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kwon, K. H., Kim, B. W., Park, H. H., Kang, J. Y., & Yeom, G. Y. (1994). Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon. In Diagnostic Techniques for Semiconductor Materials Processing (Vol. 324, pp. 481-486). Publ by Materials Research Society.
Kwon, Kwang Ho ; Kim, Bo Woo ; Park, Hyung Ho ; Kang, Jin Yeong ; Yeom, Gun Yung. / Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon. Diagnostic Techniques for Semiconductor Materials Processing. Vol. 324 Publ by Materials Research Society, 1994. pp. 481-486
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abstract = "The effects of SF6 and NF3 gas plasma treatments, and successive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF3/C2F6 plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF3 and SF6 plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF3, SF6 plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.",
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Kwon, KH, Kim, BW, Park, HH, Kang, JY & Yeom, GY 1994, Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon. in Diagnostic Techniques for Semiconductor Materials Processing. vol. 324, Publ by Materials Research Society, pp. 481-486, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 93/11/29.

Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon. / Kwon, Kwang Ho; Kim, Bo Woo; Park, Hyung Ho; Kang, Jin Yeong; Yeom, Gun Yung.

Diagnostic Techniques for Semiconductor Materials Processing. Vol. 324 Publ by Materials Research Society, 1994. p. 481-486.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon

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N2 - The effects of SF6 and NF3 gas plasma treatments, and successive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF3/C2F6 plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF3 and SF6 plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF3, SF6 plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.

AB - The effects of SF6 and NF3 gas plasma treatments, and successive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF3/C2F6 plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF3 and SF6 plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF3, SF6 plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.

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Kwon KH, Kim BW, Park HH, Kang JY, Yeom GY. Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon. In Diagnostic Techniques for Semiconductor Materials Processing. Vol. 324. Publ by Materials Research Society. 1994. p. 481-486