Abstract
The effects of SF6 and NF3 gas plasma treatments, and successive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF3/C2F6 plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF3 and SF6 plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF3, SF6 plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.
| Original language | English |
|---|---|
| Title of host publication | Diagnostic Techniques for Semiconductor Materials Processing |
| Publisher | Publ by Materials Research Society |
| Pages | 481-486 |
| Number of pages | 6 |
| Volume | 324 |
| ISBN (Print) | 1558992235 |
| Publication status | Published - 1994 Jan 1 |
| Event | Proceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA Duration: 1993 Nov 29 → 1993 Dec 2 |
Other
| Other | Proceedings of the 1993 Fall Meeting of the Materials Research Society |
|---|---|
| City | Boston, MA, USA |
| Period | 93/11/29 → 93/12/2 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
}
Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon. / Kwon, Kwang Ho; Kim, Bo Woo; Park, Hyung Ho; Kang, Jin Yeong; Yeom, Gun Yung.
Diagnostic Techniques for Semiconductor Materials Processing. Vol. 324 Publ by Materials Research Society, 1994. p. 481-486.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Effects of halogen-containing gas plasma and rapid thermal anneal treatment on the reactive ion etched silicon
AU - Kwon, Kwang Ho
AU - Kim, Bo Woo
AU - Park, Hyung Ho
AU - Kang, Jin Yeong
AU - Yeom, Gun Yung
PY - 1994/1/1
Y1 - 1994/1/1
N2 - The effects of SF6 and NF3 gas plasma treatments, and successive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF3/C2F6 plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF3 and SF6 plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF3, SF6 plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.
AB - The effects of SF6 and NF3 gas plasma treatments, and successive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF3/C2F6 plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF3 and SF6 plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF3, SF6 plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.
UR - http://www.scopus.com/inward/record.url?scp=0027969788&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027969788&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0027969788
SN - 1558992235
VL - 324
SP - 481
EP - 486
BT - Diagnostic Techniques for Semiconductor Materials Processing
PB - Publ by Materials Research Society
ER -