Effects of heat treatment on the field emission property of amorphous carbon nitride

Eung Joon Chi, Jae Yeob Shim, Hong Koo Baik

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

Amorphous carbon nitride (a-C:N) by helical resonator plasma enhanced chemical vapor deposition has been proposed as a coating material for silicon field emitter. To investigate the effects of heat treatment on the field emission, thermal annealing up to 600 °C was carried out in nitrogen ambient. The structural and compositional modifications induced by the annealing were followed by several analytical techniques: Fourier transformation infrared spectroscopy, elastic recoil detection analysis, and x-ray photoelectron spectroscopy. The hydrogen loss occur for annealing temperatures higher than 300 °C, resulting in the increase in the conducting part of the a-C:N films. a-C:N films significantly lowered the turn-on voltage and increased the emission current of the silicon emitters. After annealing at 600 °C, the field emission property was further enhanced presumably due to the efficient conduction through the a-C:N films.

Original languageEnglish
Pages127-131
Number of pages5
Publication statusPublished - 1997 Dec 1
EventProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea
Duration: 1997 Aug 171997 Aug 21

Other

OtherProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
CityKyongju, Korea
Period97/8/1797/8/21

Fingerprint

carbon nitrides
field emission
heat treatment
annealing
emitters
conduction
Fourier transformation
silicon
x ray spectroscopy
resonators
infrared spectroscopy
photoelectron spectroscopy
vapor deposition
coatings
nitrogen
electric potential
hydrogen

All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces

Cite this

Chi, E. J., Shim, J. Y., & Baik, H. K. (1997). Effects of heat treatment on the field emission property of amorphous carbon nitride. 127-131. Paper presented at Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97, Kyongju, Korea, .
Chi, Eung Joon ; Shim, Jae Yeob ; Baik, Hong Koo. / Effects of heat treatment on the field emission property of amorphous carbon nitride. Paper presented at Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97, Kyongju, Korea, .5 p.
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year = "1997",
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Chi, EJ, Shim, JY & Baik, HK 1997, 'Effects of heat treatment on the field emission property of amorphous carbon nitride', Paper presented at Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97, Kyongju, Korea, 97/8/17 - 97/8/21 pp. 127-131.

Effects of heat treatment on the field emission property of amorphous carbon nitride. / Chi, Eung Joon; Shim, Jae Yeob; Baik, Hong Koo.

1997. 127-131 Paper presented at Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97, Kyongju, Korea, .

Research output: Contribution to conferencePaper

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T1 - Effects of heat treatment on the field emission property of amorphous carbon nitride

AU - Chi, Eung Joon

AU - Shim, Jae Yeob

AU - Baik, Hong Koo

PY - 1997/12/1

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N2 - Amorphous carbon nitride (a-C:N) by helical resonator plasma enhanced chemical vapor deposition has been proposed as a coating material for silicon field emitter. To investigate the effects of heat treatment on the field emission, thermal annealing up to 600 °C was carried out in nitrogen ambient. The structural and compositional modifications induced by the annealing were followed by several analytical techniques: Fourier transformation infrared spectroscopy, elastic recoil detection analysis, and x-ray photoelectron spectroscopy. The hydrogen loss occur for annealing temperatures higher than 300 °C, resulting in the increase in the conducting part of the a-C:N films. a-C:N films significantly lowered the turn-on voltage and increased the emission current of the silicon emitters. After annealing at 600 °C, the field emission property was further enhanced presumably due to the efficient conduction through the a-C:N films.

AB - Amorphous carbon nitride (a-C:N) by helical resonator plasma enhanced chemical vapor deposition has been proposed as a coating material for silicon field emitter. To investigate the effects of heat treatment on the field emission, thermal annealing up to 600 °C was carried out in nitrogen ambient. The structural and compositional modifications induced by the annealing were followed by several analytical techniques: Fourier transformation infrared spectroscopy, elastic recoil detection analysis, and x-ray photoelectron spectroscopy. The hydrogen loss occur for annealing temperatures higher than 300 °C, resulting in the increase in the conducting part of the a-C:N films. a-C:N films significantly lowered the turn-on voltage and increased the emission current of the silicon emitters. After annealing at 600 °C, the field emission property was further enhanced presumably due to the efficient conduction through the a-C:N films.

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Chi EJ, Shim JY, Baik HK. Effects of heat treatment on the field emission property of amorphous carbon nitride. 1997. Paper presented at Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97, Kyongju, Korea, .