Effects of heat treatment on the field emission property of amorphous carbon nitride

Eung Joon Chi, Jae Yeob Shim, Hong Koo Baik

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

Amorphous carbon nitride (a-C:N) by helical resonator plasma enhanced chemical vapor deposition has been proposed as a coating material for silicon field emitter. To investigate the effects of heat treatment on the field emission, thermal annealing up to 600 °C was carried out in nitrogen ambient. The structural and compositional modifications induced by the annealing were followed by several analytical techniques: Fourier transformation infrared spectroscopy, elastic recoil detection analysis, and x-ray photoelectron spectroscopy. The hydrogen loss occur for annealing temperatures higher than 300 °C, resulting in the increase in the conducting part of the a-C:N films. a-C:N films significantly lowered the turn-on voltage and increased the emission current of the silicon emitters. After annealing at 600 °C, the field emission property was further enhanced presumably due to the efficient conduction through the a-C:N films.

Original languageEnglish
Pages127-131
Number of pages5
Publication statusPublished - 1997
EventProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea
Duration: 1997 Aug 171997 Aug 21

Other

OtherProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
CityKyongju, Korea
Period97/8/1797/8/21

All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces

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