Effects of heat treatment on the field emission property of amorphous carbon nitride

Eung Joon Chi, Jae Yeob Shim, Dong Jun Choi, Hong Koo Baik

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

As a coating material for silicon field emitters, amorphous carbon nitride (a-C:N) by helical resonator plasma enhanced chemical vapor deposition has been proposed. Thermal annealing in nitrogen ambient up to 600 °C was carried out to investigate the effects of heat treatment on the field emission. The structural and compositional modifications induced by the annealing were followed by several analytical techniques: Fourier transformation infrared (FTIR) spectroscopy, elastic recoil detection analysis (ERDA), and x-ray photoelectron spectroscopy. FTIR and ERDA analyses indicate that hydrogen loss occurs for annealing temperatures higher than 300 °C. Amorphous-C:N films significantly lowered the turn-on voltage and increased the emission current of the silicon emitters. After annealing at 600 °C, the field emission property was further enhanced presumably due to the efficient conduction through the a-C:N films induced by an increase of the number and/or the size of the graphitic domains.

Original languageEnglish
Pages (from-to)1219-1221
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number3
Publication statusPublished - 1998 May 1

Fingerprint

carbon nitrides
Carbon nitride
Amorphous carbon
Field emission
field emission
heat treatment
Heat treatment
Annealing
annealing
Fourier transformation
emitters
Silicon
silicon
Plasma enhanced chemical vapor deposition
Photoelectron spectroscopy
x ray spectroscopy
Resonators
Infrared spectroscopy
resonators
infrared spectroscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{8aebd944fdcf4b22a046c3e03ba67c40,
title = "Effects of heat treatment on the field emission property of amorphous carbon nitride",
abstract = "As a coating material for silicon field emitters, amorphous carbon nitride (a-C:N) by helical resonator plasma enhanced chemical vapor deposition has been proposed. Thermal annealing in nitrogen ambient up to 600 °C was carried out to investigate the effects of heat treatment on the field emission. The structural and compositional modifications induced by the annealing were followed by several analytical techniques: Fourier transformation infrared (FTIR) spectroscopy, elastic recoil detection analysis (ERDA), and x-ray photoelectron spectroscopy. FTIR and ERDA analyses indicate that hydrogen loss occurs for annealing temperatures higher than 300 °C. Amorphous-C:N films significantly lowered the turn-on voltage and increased the emission current of the silicon emitters. After annealing at 600 °C, the field emission property was further enhanced presumably due to the efficient conduction through the a-C:N films induced by an increase of the number and/or the size of the graphitic domains.",
author = "Chi, {Eung Joon} and Shim, {Jae Yeob} and Choi, {Dong Jun} and Baik, {Hong Koo}",
year = "1998",
month = "5",
day = "1",
language = "English",
volume = "16",
pages = "1219--1221",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

Effects of heat treatment on the field emission property of amorphous carbon nitride. / Chi, Eung Joon; Shim, Jae Yeob; Choi, Dong Jun; Baik, Hong Koo.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3, 01.05.1998, p. 1219-1221.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of heat treatment on the field emission property of amorphous carbon nitride

AU - Chi, Eung Joon

AU - Shim, Jae Yeob

AU - Choi, Dong Jun

AU - Baik, Hong Koo

PY - 1998/5/1

Y1 - 1998/5/1

N2 - As a coating material for silicon field emitters, amorphous carbon nitride (a-C:N) by helical resonator plasma enhanced chemical vapor deposition has been proposed. Thermal annealing in nitrogen ambient up to 600 °C was carried out to investigate the effects of heat treatment on the field emission. The structural and compositional modifications induced by the annealing were followed by several analytical techniques: Fourier transformation infrared (FTIR) spectroscopy, elastic recoil detection analysis (ERDA), and x-ray photoelectron spectroscopy. FTIR and ERDA analyses indicate that hydrogen loss occurs for annealing temperatures higher than 300 °C. Amorphous-C:N films significantly lowered the turn-on voltage and increased the emission current of the silicon emitters. After annealing at 600 °C, the field emission property was further enhanced presumably due to the efficient conduction through the a-C:N films induced by an increase of the number and/or the size of the graphitic domains.

AB - As a coating material for silicon field emitters, amorphous carbon nitride (a-C:N) by helical resonator plasma enhanced chemical vapor deposition has been proposed. Thermal annealing in nitrogen ambient up to 600 °C was carried out to investigate the effects of heat treatment on the field emission. The structural and compositional modifications induced by the annealing were followed by several analytical techniques: Fourier transformation infrared (FTIR) spectroscopy, elastic recoil detection analysis (ERDA), and x-ray photoelectron spectroscopy. FTIR and ERDA analyses indicate that hydrogen loss occurs for annealing temperatures higher than 300 °C. Amorphous-C:N films significantly lowered the turn-on voltage and increased the emission current of the silicon emitters. After annealing at 600 °C, the field emission property was further enhanced presumably due to the efficient conduction through the a-C:N films induced by an increase of the number and/or the size of the graphitic domains.

UR - http://www.scopus.com/inward/record.url?scp=0001163262&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001163262&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0001163262

VL - 16

SP - 1219

EP - 1221

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 3

ER -