Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

G. Glass, H. Kim, M. R. Sardela, Q. Lu, J. R.A. Carlsson, J. R. Abelson, J. E. Greene

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Abstract

Si(001) layers doped with B concentrations CB ranging from 5 x 1016 to 2 x 1021 cm-3 were grown on Si(001)-(2 x 1) substrates by gas-source molecular beam epitaxy using Si2H6 and B2H6. B was incorporated into substitutional electrically active sites at concentrations up to 2.5 x 1020 cm-3. With increasing incident flux ratios JB2H6/JSi2H6≥0.01 (corresponding to CB = 2 x 1019 cm-3), film growth rates decreased at Ts≥600°C, but increased at Ts≤550°C. Deuterium temperature-programmed desorption measurements as a function of increasing CB show strong B surface segregation, decreased steady-state H coverages θH, and lower dangling bond densities. The Si:B growth kinetics are well described by a model showing that at low temperatures, where steady-state θH values are high, increased H desorption rates from B-backbonded Si adatoms dominate, leading to an enhancement in RSi, whereas at higher temperatures RSi decreases due to the decreased adsorption-site density.

Original languageEnglish
Pages (from-to)L63-L68
JournalSurface Science
Volume392
Issue number1-3
DOIs
Publication statusPublished - 1997 Dec

Bibliographical note

Funding Information:
The authors acknowledge the financial support of the Office of Naval Research through contracts NOOO 14-92-J-1649 and 14-96-0280, administered by Drs. A1 Goodman and Larry Cooper, and the Semiconductor Research Corporation. J.R.A.C. was supported by a Fellowship from the Swedish

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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