Effects of high-pressure H 2O-annealing on amorphous IGZO thin-film transistors

Hyun Soo Shin; You Seung Rim; Yeon Gon Mo; Chaun Gi Choi; Hyun Jae Kim

doi:10.1002/pssa.201127243

Effects of high-pressure H ₂O-annealing on amorphous IGZO thin-film transistors

Hyun Soo Shin, You Seung Rim, Yeon Gon Mo, Chaun Gi Choi, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The effects of high-pressure annealing were investigated using amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The fabricated device annealed at 5atm in H ₂O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This was attributed to mainly a reduction in the band bending at the overlap between the source-drain (S/D) electrodes and the etch stop layer (ESL). This is originated from the recovery of charge-trapping sites at in- and bottom-ESLs due to defect passivation with the aid of high-pressure thermal annealing at 5atm in H ₂O ambient.

Original language	English
Pages (from-to)	2231-2234
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	208
Issue number	9
DOIs	https://doi.org/10.1002/pssa.201127243
Publication status	Published - 2011 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Surfaces and Interfaces

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10.1002/pssa.201127243

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title = "Effects of high-pressure H 2O-annealing on amorphous IGZO thin-film transistors",

abstract = "The effects of high-pressure annealing were investigated using amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The fabricated device annealed at 5atm in H 2O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This was attributed to mainly a reduction in the band bending at the overlap between the source-drain (S/D) electrodes and the etch stop layer (ESL). This is originated from the recovery of charge-trapping sites at in- and bottom-ESLs due to defect passivation with the aid of high-pressure thermal annealing at 5atm in H 2O ambient.",

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AU - Shin, Hyun Soo

AU - Rim, You Seung

AU - Mo, Yeon Gon

AU - Choi, Chaun Gi

AU - Kim, Hyun Jae

PY - 2011/9

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AB - The effects of high-pressure annealing were investigated using amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The fabricated device annealed at 5atm in H 2O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This was attributed to mainly a reduction in the band bending at the overlap between the source-drain (S/D) electrodes and the etch stop layer (ESL). This is originated from the recovery of charge-trapping sites at in- and bottom-ESLs due to defect passivation with the aid of high-pressure thermal annealing at 5atm in H 2O ambient.

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Effects of high-pressure H ₂O-annealing on amorphous IGZO thin-film transistors

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