Effects of high-pressure H 2O-annealing on amorphous IGZO thin-film transistors

Hyun Soo Shin, You Seung Rim, Yeon Gon Mo, Chaun Gi Choi, Hyun Jae Kim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The effects of high-pressure annealing were investigated using amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The fabricated device annealed at 5atm in H 2O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This was attributed to mainly a reduction in the band bending at the overlap between the source-drain (S/D) electrodes and the etch stop layer (ESL). This is originated from the recovery of charge-trapping sites at in- and bottom-ESLs due to defect passivation with the aid of high-pressure thermal annealing at 5atm in H 2O ambient.

Original languageEnglish
Pages (from-to)2231-2234
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume208
Issue number9
DOIs
Publication statusPublished - 2011 Sep 1

Fingerprint

Amorphous films
Thin film transistors
transistors
Annealing
Charge trapping
annealing
thin films
Passivation
passivity
recovery
trapping
Recovery
Defects
Electrodes
electrodes
defects
Temperature
temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Shin, Hyun Soo ; Rim, You Seung ; Mo, Yeon Gon ; Choi, Chaun Gi ; Kim, Hyun Jae. / Effects of high-pressure H 2O-annealing on amorphous IGZO thin-film transistors. In: Physica Status Solidi (A) Applications and Materials Science. 2011 ; Vol. 208, No. 9. pp. 2231-2234.
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Effects of high-pressure H 2O-annealing on amorphous IGZO thin-film transistors. / Shin, Hyun Soo; Rim, You Seung; Mo, Yeon Gon; Choi, Chaun Gi; Kim, Hyun Jae.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 208, No. 9, 01.09.2011, p. 2231-2234.

Research output: Contribution to journalArticle

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