TY - JOUR
T1 - Effects of high-temperature metal-organic chemical vapor deposition of Pb(Zr,Ti)O3 thin films on structural stabilities of hybrid Pt/IrO2/Ir stack and single-layer Ir bottom electrodes
AU - Sun, Ho Jung
AU - Choi, Eun Seok
AU - Lee, Tae Kwon
AU - Hong, Tae Eun
AU - Yang, Jun Mo
AU - Kweon, Soon Yong
AU - Kim, Nam Kyeong
AU - Yeom, Seung Jin
AU - Roh, Jae Sung
AU - Sohn, Hyun Chul
AU - Kim, Jin Woong
PY - 2004/5
Y1 - 2004/5
N2 - High-temperature Pb(Zr,Ti)O3 (PZT) metal-organic chemical vapor deposition (MOCVD) at 620°C was performed on two major bottom electrode candidates, namely, a hybrid Pt/IrO2/Ir stack electrode and a single-layer Ir electrode. The structural stabilities of both PZT/electrode stacks were investigated. Severe interaction between PZT and the underlayered Pt films was observed, and the interaction resulted in a pyrochlore phase in the PZT film and blister-type deformation in the Pt film. On the other hand, structural stability, which served as the basis for a well-crystallized perovskite PZT film, was preserved in the case of the Ir electrode. Therefore, it could be determined that the Ir electrode as a bottom electrode was better than the Pt electrode from the point of view of the structural stability of a capacitor stack, when high-temperature MOCVD is chosen as a preparation method.
AB - High-temperature Pb(Zr,Ti)O3 (PZT) metal-organic chemical vapor deposition (MOCVD) at 620°C was performed on two major bottom electrode candidates, namely, a hybrid Pt/IrO2/Ir stack electrode and a single-layer Ir electrode. The structural stabilities of both PZT/electrode stacks were investigated. Severe interaction between PZT and the underlayered Pt films was observed, and the interaction resulted in a pyrochlore phase in the PZT film and blister-type deformation in the Pt film. On the other hand, structural stability, which served as the basis for a well-crystallized perovskite PZT film, was preserved in the case of the Ir electrode. Therefore, it could be determined that the Ir electrode as a bottom electrode was better than the Pt electrode from the point of view of the structural stability of a capacitor stack, when high-temperature MOCVD is chosen as a preparation method.
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U2 - 10.1143/JJAP.43.2651
DO - 10.1143/JJAP.43.2651
M3 - Article
AN - SCOPUS:3142667000
VL - 43
SP - 2651
EP - 2654
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 5 A
ER -