Effects of high-temperature metal-organic chemical vapor deposition of Pb(Zr,Ti)O3 thin films on structural stabilities of hybrid Pt/IrO2/Ir stack and single-layer Ir bottom electrodes

Ho Jung Sun; Eun Seok Choi; Tae Kwon Lee; Tae Eun Hong; Jun Mo Yang; Soon Yong Kweon; Nam Kyeong Kim; Seung Jin Yeom; Jae Sung Roh; Hyun Chul Sohn; Jin Woong Kim

doi:10.1143/JJAP.43.2651

Effects of high-temperature metal-organic chemical vapor deposition of Pb(Zr,Ti)O₃ thin films on structural stabilities of hybrid Pt/IrO₂/Ir stack and single-layer Ir bottom electrodes

Ho Jung Sun, Eun Seok Choi, Tae Kwon Lee, Tae Eun Hong, Jun Mo Yang, Soon Yong Kweon, Nam Kyeong Kim, Seung Jin Yeom, Jae Sung Roh, Hyun Chul Sohn, Jin Woong Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

High-temperature Pb(Zr,Ti)O₃ (PZT) metal-organic chemical vapor deposition (MOCVD) at 620°C was performed on two major bottom electrode candidates, namely, a hybrid Pt/IrO₂/Ir stack electrode and a single-layer Ir electrode. The structural stabilities of both PZT/electrode stacks were investigated. Severe interaction between PZT and the underlayered Pt films was observed, and the interaction resulted in a pyrochlore phase in the PZT film and blister-type deformation in the Pt film. On the other hand, structural stability, which served as the basis for a well-crystallized perovskite PZT film, was preserved in the case of the Ir electrode. Therefore, it could be determined that the Ir electrode as a bottom electrode was better than the Pt electrode from the point of view of the structural stability of a capacitor stack, when high-temperature MOCVD is chosen as a preparation method.

Original language	English
Pages (from-to)	2651-2654
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	5 A
DOIs	https://doi.org/10.1143/JJAP.43.2651
Publication status	Published - 2004 May

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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Sun, H. J., Choi, E. S., Lee, T. K., Hong, T. E., Yang, J. M., Kweon, S. Y., Kim, N. K., Yeom, S. J., Roh, J. S., Sohn, H. C., & Kim, J. W. (2004). Effects of high-temperature metal-organic chemical vapor deposition of Pb(Zr,Ti)O₃ thin films on structural stabilities of hybrid Pt/IrO₂/Ir stack and single-layer Ir bottom electrodes. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43(5 A), 2651-2654. https://doi.org/10.1143/JJAP.43.2651

Sun, Ho Jung ; Choi, Eun Seok ; Lee, Tae Kwon ; Hong, Tae Eun ; Yang, Jun Mo ; Kweon, Soon Yong ; Kim, Nam Kyeong ; Yeom, Seung Jin ; Roh, Jae Sung ; Sohn, Hyun Chul ; Kim, Jin Woong. / Effects of high-temperature metal-organic chemical vapor deposition of Pb(Zr,Ti)O₃ thin films on structural stabilities of hybrid Pt/IrO₂/Ir stack and single-layer Ir bottom electrodes. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2004 ; Vol. 43, No. 5 A. pp. 2651-2654.

@article{3daf744310b34488a64da9b87521da98,

title = "Effects of high-temperature metal-organic chemical vapor deposition of Pb(Zr,Ti)O3 thin films on structural stabilities of hybrid Pt/IrO2/Ir stack and single-layer Ir bottom electrodes",

abstract = "High-temperature Pb(Zr,Ti)O3 (PZT) metal-organic chemical vapor deposition (MOCVD) at 620°C was performed on two major bottom electrode candidates, namely, a hybrid Pt/IrO2/Ir stack electrode and a single-layer Ir electrode. The structural stabilities of both PZT/electrode stacks were investigated. Severe interaction between PZT and the underlayered Pt films was observed, and the interaction resulted in a pyrochlore phase in the PZT film and blister-type deformation in the Pt film. On the other hand, structural stability, which served as the basis for a well-crystallized perovskite PZT film, was preserved in the case of the Ir electrode. Therefore, it could be determined that the Ir electrode as a bottom electrode was better than the Pt electrode from the point of view of the structural stability of a capacitor stack, when high-temperature MOCVD is chosen as a preparation method.",

author = "Sun, {Ho Jung} and Choi, {Eun Seok} and Lee, {Tae Kwon} and Hong, {Tae Eun} and Yang, {Jun Mo} and Kweon, {Soon Yong} and Kim, {Nam Kyeong} and Yeom, {Seung Jin} and Roh, {Jae Sung} and Sohn, {Hyun Chul} and Kim, {Jin Woong}",

year = "2004",

month = may,

doi = "10.1143/JJAP.43.2651",

language = "English",

volume = "43",

pages = "2651--2654",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5 A",

}

Sun, HJ, Choi, ES, Lee, TK, Hong, TE, Yang, JM, Kweon, SY, Kim, NK, Yeom, SJ, Roh, JS, Sohn, HC & Kim, JW 2004, 'Effects of high-temperature metal-organic chemical vapor deposition of Pb(Zr,Ti)O₃ thin films on structural stabilities of hybrid Pt/IrO₂/Ir stack and single-layer Ir bottom electrodes', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 43, no. 5 A, pp. 2651-2654. https://doi.org/10.1143/JJAP.43.2651

Effects of high-temperature metal-organic chemical vapor deposition of Pb(Zr,Ti)O₃ thin films on structural stabilities of hybrid Pt/IrO₂/Ir stack and single-layer Ir bottom electrodes. / Sun, Ho Jung; Choi, Eun Seok; Lee, Tae Kwon; Hong, Tae Eun; Yang, Jun Mo; Kweon, Soon Yong; Kim, Nam Kyeong; Yeom, Seung Jin; Roh, Jae Sung; Sohn, Hyun Chul; Kim, Jin Woong.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 5 A, 05.2004, p. 2651-2654.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effects of high-temperature metal-organic chemical vapor deposition of Pb(Zr,Ti)O3 thin films on structural stabilities of hybrid Pt/IrO2/Ir stack and single-layer Ir bottom electrodes

AU - Sun, Ho Jung

AU - Choi, Eun Seok

AU - Lee, Tae Kwon

AU - Hong, Tae Eun

AU - Yang, Jun Mo

AU - Kweon, Soon Yong

AU - Kim, Nam Kyeong

AU - Yeom, Seung Jin

AU - Roh, Jae Sung

AU - Sohn, Hyun Chul

AU - Kim, Jin Woong

PY - 2004/5

Y1 - 2004/5

N2 - High-temperature Pb(Zr,Ti)O3 (PZT) metal-organic chemical vapor deposition (MOCVD) at 620°C was performed on two major bottom electrode candidates, namely, a hybrid Pt/IrO2/Ir stack electrode and a single-layer Ir electrode. The structural stabilities of both PZT/electrode stacks were investigated. Severe interaction between PZT and the underlayered Pt films was observed, and the interaction resulted in a pyrochlore phase in the PZT film and blister-type deformation in the Pt film. On the other hand, structural stability, which served as the basis for a well-crystallized perovskite PZT film, was preserved in the case of the Ir electrode. Therefore, it could be determined that the Ir electrode as a bottom electrode was better than the Pt electrode from the point of view of the structural stability of a capacitor stack, when high-temperature MOCVD is chosen as a preparation method.

AB - High-temperature Pb(Zr,Ti)O3 (PZT) metal-organic chemical vapor deposition (MOCVD) at 620°C was performed on two major bottom electrode candidates, namely, a hybrid Pt/IrO2/Ir stack electrode and a single-layer Ir electrode. The structural stabilities of both PZT/electrode stacks were investigated. Severe interaction between PZT and the underlayered Pt films was observed, and the interaction resulted in a pyrochlore phase in the PZT film and blister-type deformation in the Pt film. On the other hand, structural stability, which served as the basis for a well-crystallized perovskite PZT film, was preserved in the case of the Ir electrode. Therefore, it could be determined that the Ir electrode as a bottom electrode was better than the Pt electrode from the point of view of the structural stability of a capacitor stack, when high-temperature MOCVD is chosen as a preparation method.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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