Effects of high-temperature metal-organic chemical vapor deposition of Pb(Zr,Ti)O3 thin films on structural stabilities of hybrid Pt/IrO2/Ir stack and single-layer Ir bottom electrodes

Ho Jung Sun, Eun Seok Choi, Tae Kwon Lee, Tae Eun Hong, Jun Mo Yang, Soon Yong Kweon, Nam Kyeong Kim, Seung Jin Yeom, Jae Sung Roh, Hyun Chul Sohn, Jin Woong Kim

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High-temperature Pb(Zr,Ti)O3 (PZT) metal-organic chemical vapor deposition (MOCVD) at 620°C was performed on two major bottom electrode candidates, namely, a hybrid Pt/IrO2/Ir stack electrode and a single-layer Ir electrode. The structural stabilities of both PZT/electrode stacks were investigated. Severe interaction between PZT and the underlayered Pt films was observed, and the interaction resulted in a pyrochlore phase in the PZT film and blister-type deformation in the Pt film. On the other hand, structural stability, which served as the basis for a well-crystallized perovskite PZT film, was preserved in the case of the Ir electrode. Therefore, it could be determined that the Ir electrode as a bottom electrode was better than the Pt electrode from the point of view of the structural stability of a capacitor stack, when high-temperature MOCVD is chosen as a preparation method.

Original languageEnglish
Pages (from-to)2651-2654
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number5 A
Publication statusPublished - 2004 May


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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