Abstract
High-temperature Pb(Zr,Ti)O3 (PZT) metal-organic chemical vapor deposition (MOCVD) at 620°C was performed on two major bottom electrode candidates, namely, a hybrid Pt/IrO2/Ir stack electrode and a single-layer Ir electrode. The structural stabilities of both PZT/electrode stacks were investigated. Severe interaction between PZT and the underlayered Pt films was observed, and the interaction resulted in a pyrochlore phase in the PZT film and blister-type deformation in the Pt film. On the other hand, structural stability, which served as the basis for a well-crystallized perovskite PZT film, was preserved in the case of the Ir electrode. Therefore, it could be determined that the Ir electrode as a bottom electrode was better than the Pt electrode from the point of view of the structural stability of a capacitor stack, when high-temperature MOCVD is chosen as a preparation method.
Original language | English |
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Pages (from-to) | 2651-2654 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 43 |
Issue number | 5 A |
DOIs | |
Publication status | Published - 2004 May |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)