Effect of H2 addition to C2F6 plasma etching of SiO2 aerogel film was examined for low-k dielectric application. In this experiment, H2 plasma in itself was responsible for pore blocking and bond breaking of the SiO2 aerogel. With increasing hydrogen from 0 to 50%, etch rate of SiO2 aerogel was severely dropped at 20% of H2 addition. According to the increase in H2 addition, transition from fluorine-rich residue to carbon-rich one was gradually happened in SiO2 aerogel. Surface microstructure of SiO2 aerogel was so influenced with the increasing H2 addition that they transformed to be planar by the interaction between residue/network and ion bombardment and the condensation reaction of surface chemicals with H2 plasma.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||12 B|
|Publication status||Published - 2000 Dec 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)