Effects of H2 addition in magnetized inductively coupled C2F6 plasma etching of silica aerogel film

Seok Joo Wang, Hyung-Ho Park, Geun Young Yeom

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Effect of H2 addition to C2F6 plasma etching of SiO2 aerogel film was examined for low-k dielectric application. In this experiment, H2 plasma in itself was responsible for pore blocking and bond breaking of the SiO2 aerogel. With increasing hydrogen from 0 to 50%, etch rate of SiO2 aerogel was severely dropped at 20% of H2 addition. According to the increase in H2 addition, transition from fluorine-rich residue to carbon-rich one was gradually happened in SiO2 aerogel. Surface microstructure of SiO2 aerogel was so influenced with the increasing H2 addition that they transformed to be planar by the interaction between residue/network and ion bombardment and the condensation reaction of surface chemicals with H2 plasma.

Original languageEnglish
Pages (from-to)7007-7010
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number12 B
Publication statusPublished - 2000 Dec 1

Fingerprint

Aerogels
Plasma etching
aerogels
Inductively coupled plasma
plasma etching
Silica
silicon dioxide
Plasmas
Condensation reactions
Ion bombardment
Fluorine
fluorine
bombardment
condensation
porosity
Hydrogen
microstructure
Microstructure
Carbon
carbon

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "Effect of H2 addition to C2F6 plasma etching of SiO2 aerogel film was examined for low-k dielectric application. In this experiment, H2 plasma in itself was responsible for pore blocking and bond breaking of the SiO2 aerogel. With increasing hydrogen from 0 to 50{\%}, etch rate of SiO2 aerogel was severely dropped at 20{\%} of H2 addition. According to the increase in H2 addition, transition from fluorine-rich residue to carbon-rich one was gradually happened in SiO2 aerogel. Surface microstructure of SiO2 aerogel was so influenced with the increasing H2 addition that they transformed to be planar by the interaction between residue/network and ion bombardment and the condensation reaction of surface chemicals with H2 plasma.",
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AU - Wang, Seok Joo

AU - Park, Hyung-Ho

AU - Yeom, Geun Young

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N2 - Effect of H2 addition to C2F6 plasma etching of SiO2 aerogel film was examined for low-k dielectric application. In this experiment, H2 plasma in itself was responsible for pore blocking and bond breaking of the SiO2 aerogel. With increasing hydrogen from 0 to 50%, etch rate of SiO2 aerogel was severely dropped at 20% of H2 addition. According to the increase in H2 addition, transition from fluorine-rich residue to carbon-rich one was gradually happened in SiO2 aerogel. Surface microstructure of SiO2 aerogel was so influenced with the increasing H2 addition that they transformed to be planar by the interaction between residue/network and ion bombardment and the condensation reaction of surface chemicals with H2 plasma.

AB - Effect of H2 addition to C2F6 plasma etching of SiO2 aerogel film was examined for low-k dielectric application. In this experiment, H2 plasma in itself was responsible for pore blocking and bond breaking of the SiO2 aerogel. With increasing hydrogen from 0 to 50%, etch rate of SiO2 aerogel was severely dropped at 20% of H2 addition. According to the increase in H2 addition, transition from fluorine-rich residue to carbon-rich one was gradually happened in SiO2 aerogel. Surface microstructure of SiO2 aerogel was so influenced with the increasing H2 addition that they transformed to be planar by the interaction between residue/network and ion bombardment and the condensation reaction of surface chemicals with H2 plasma.

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