Effects of H2 addition in magnetized inductively coupled C2F6 plasma etching of silica aerogel film

Seok Joo Wang, Hyung Ho Park, Sang Hoon Hyun, Geun Young Yeom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low k dielectrics not only lower line-to-line capacitance, but also reduce cross-talk noise in the interconnect and alleviate power dissipation issues. Silica aerogel film is a promising candidate for low-k innerlevel dielectrics by its ca. 70% porosity.1) As one of manufacture processes, etching behavior was considered with the increasing of H2 gas addition to C2F6 gas.

Original languageEnglish
Title of host publicationDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages206-207
Number of pages2
ISBN (Electronic)4891140046, 9784891140045
DOIs
Publication statusPublished - 2000 Jan 1
EventInternational Microprocesses and Nanotechnology Conference, MNC 2000 - Tokyo, Japan
Duration: 2000 Jul 112000 Jul 13

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2000
CountryJapan
CityTokyo
Period00/7/1100/7/13

Fingerprint

Aerogels
Plasma etching
Inductively coupled plasma
Silicon Dioxide
Gases
Silica
Noise
Etching
Energy dissipation
Capacitance
Low-k dielectric

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Wang, S. J., Park, H. H., Hyun, S. H., & Yeom, G. Y. (2000). Effects of H2 addition in magnetized inductively coupled C2F6 plasma etching of silica aerogel film. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000 (pp. 206-207). [872712] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2000.872712
Wang, Seok Joo ; Park, Hyung Ho ; Hyun, Sang Hoon ; Yeom, Geun Young. / Effects of H2 addition in magnetized inductively coupled C2F6 plasma etching of silica aerogel film. Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 206-207
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abstract = "Low k dielectrics not only lower line-to-line capacitance, but also reduce cross-talk noise in the interconnect and alleviate power dissipation issues. Silica aerogel film is a promising candidate for low-k innerlevel dielectrics by its ca. 70{\%} porosity.1) As one of manufacture processes, etching behavior was considered with the increasing of H2 gas addition to C2F6 gas.",
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Wang, SJ, Park, HH, Hyun, SH & Yeom, GY 2000, Effects of H2 addition in magnetized inductively coupled C2F6 plasma etching of silica aerogel film. in Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000., 872712, Institute of Electrical and Electronics Engineers Inc., pp. 206-207, International Microprocesses and Nanotechnology Conference, MNC 2000, Tokyo, Japan, 00/7/11. https://doi.org/10.1109/IMNC.2000.872712

Effects of H2 addition in magnetized inductively coupled C2F6 plasma etching of silica aerogel film. / Wang, Seok Joo; Park, Hyung Ho; Hyun, Sang Hoon; Yeom, Geun Young.

Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. p. 206-207 872712.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - Low k dielectrics not only lower line-to-line capacitance, but also reduce cross-talk noise in the interconnect and alleviate power dissipation issues. Silica aerogel film is a promising candidate for low-k innerlevel dielectrics by its ca. 70% porosity.1) As one of manufacture processes, etching behavior was considered with the increasing of H2 gas addition to C2F6 gas.

AB - Low k dielectrics not only lower line-to-line capacitance, but also reduce cross-talk noise in the interconnect and alleviate power dissipation issues. Silica aerogel film is a promising candidate for low-k innerlevel dielectrics by its ca. 70% porosity.1) As one of manufacture processes, etching behavior was considered with the increasing of H2 gas addition to C2F6 gas.

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Wang SJ, Park HH, Hyun SH, Yeom GY. Effects of H2 addition in magnetized inductively coupled C2F6 plasma etching of silica aerogel film. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc. 2000. p. 206-207. 872712 https://doi.org/10.1109/IMNC.2000.872712