Effects of interface Al2O3 passivation layer for High-k HfO2 on GaAs

Dong Chan Suh, Young Dae Cho, Dae Hong Ko, Yongshik Lee, Kwun Bum Chung, Mann Ho Cho

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The effects of Al2 O3 passivation, formed by atomic layer deposition (ALD) at the interface of Hf O2 /GaAs, were investigated by high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and capacitance-voltage (C-V) measurements. The results indicate that the incorporation of Ga by diffusion into the Hf O 2 layer is reduced by the Al2 O3 passivation at the Hf O2 /GaAs interface. The Ga and As contents of the Hf O 2 films decreased with increasing amount of interfacial Al 2 O3 passivation, while the capacitance value decreased. The Al2 O3 phase optimized at five ALD cycles effectively suppressed the formation of interfacial oxide and subsequently improved the C-V electrical properties.

Original languageEnglish
Pages (from-to)H63-H65
JournalElectrochemical and Solid-State Letters
Volume14
Issue number2
DOIs
Publication statusPublished - 2011 Jan 28

Fingerprint

Passivation
passivity
Atomic layer deposition
capacitance
atomic layer epitaxy
Capacitance
Capacitance measurement
Voltage measurement
High resolution transmission electron microscopy
Oxides
electrical measurement
Electric properties
X ray photoelectron spectroscopy
electrical properties
photoelectron spectroscopy
transmission electron microscopy
cycles
oxides
high resolution
Electric potential

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

@article{38c861e8e45346b3b9aedb09ced26f45,
title = "Effects of interface Al2O3 passivation layer for High-k HfO2 on GaAs",
abstract = "The effects of Al2 O3 passivation, formed by atomic layer deposition (ALD) at the interface of Hf O2 /GaAs, were investigated by high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and capacitance-voltage (C-V) measurements. The results indicate that the incorporation of Ga by diffusion into the Hf O 2 layer is reduced by the Al2 O3 passivation at the Hf O2 /GaAs interface. The Ga and As contents of the Hf O 2 films decreased with increasing amount of interfacial Al 2 O3 passivation, while the capacitance value decreased. The Al2 O3 phase optimized at five ALD cycles effectively suppressed the formation of interfacial oxide and subsequently improved the C-V electrical properties.",
author = "Suh, {Dong Chan} and Cho, {Young Dae} and Ko, {Dae Hong} and Yongshik Lee and Chung, {Kwun Bum} and Cho, {Mann Ho}",
year = "2011",
month = "1",
day = "28",
doi = "10.1149/1.3516615",
language = "English",
volume = "14",
pages = "H63--H65",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "2",

}

Effects of interface Al2O3 passivation layer for High-k HfO2 on GaAs. / Suh, Dong Chan; Cho, Young Dae; Ko, Dae Hong; Lee, Yongshik; Chung, Kwun Bum; Cho, Mann Ho.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 2, 28.01.2011, p. H63-H65.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of interface Al2O3 passivation layer for High-k HfO2 on GaAs

AU - Suh, Dong Chan

AU - Cho, Young Dae

AU - Ko, Dae Hong

AU - Lee, Yongshik

AU - Chung, Kwun Bum

AU - Cho, Mann Ho

PY - 2011/1/28

Y1 - 2011/1/28

N2 - The effects of Al2 O3 passivation, formed by atomic layer deposition (ALD) at the interface of Hf O2 /GaAs, were investigated by high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and capacitance-voltage (C-V) measurements. The results indicate that the incorporation of Ga by diffusion into the Hf O 2 layer is reduced by the Al2 O3 passivation at the Hf O2 /GaAs interface. The Ga and As contents of the Hf O 2 films decreased with increasing amount of interfacial Al 2 O3 passivation, while the capacitance value decreased. The Al2 O3 phase optimized at five ALD cycles effectively suppressed the formation of interfacial oxide and subsequently improved the C-V electrical properties.

AB - The effects of Al2 O3 passivation, formed by atomic layer deposition (ALD) at the interface of Hf O2 /GaAs, were investigated by high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and capacitance-voltage (C-V) measurements. The results indicate that the incorporation of Ga by diffusion into the Hf O 2 layer is reduced by the Al2 O3 passivation at the Hf O2 /GaAs interface. The Ga and As contents of the Hf O 2 films decreased with increasing amount of interfacial Al 2 O3 passivation, while the capacitance value decreased. The Al2 O3 phase optimized at five ALD cycles effectively suppressed the formation of interfacial oxide and subsequently improved the C-V electrical properties.

UR - http://www.scopus.com/inward/record.url?scp=78951478114&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78951478114&partnerID=8YFLogxK

U2 - 10.1149/1.3516615

DO - 10.1149/1.3516615

M3 - Article

AN - SCOPUS:78951478114

VL - 14

SP - H63-H65

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 2

ER -