The effects of Al2 O3 passivation, formed by atomic layer deposition (ALD) at the interface of Hf O2 /GaAs, were investigated by high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and capacitance-voltage (C-V) measurements. The results indicate that the incorporation of Ga by diffusion into the Hf O 2 layer is reduced by the Al2 O3 passivation at the Hf O2 /GaAs interface. The Ga and As contents of the Hf O 2 films decreased with increasing amount of interfacial Al 2 O3 passivation, while the capacitance value decreased. The Al2 O3 phase optimized at five ALD cycles effectively suppressed the formation of interfacial oxide and subsequently improved the C-V electrical properties.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering