A specific sputtering technique and an ex situ annealing process increased both the grain size of NiTe2 thin films and the number of grains with basal planes parallel to the substrate. These properties are important when utilising NiTe2 as transparent electrodes, because larger grains lower the electrical resistivity. In addition, grains arranged in specific directions are helpful for exfoliation in order to reduce their thicknesses. The NiTe2 films fabricated by the compound sputtering technique exhibited a lower interfacial energy between the film and the glass substrate as compared to those prepared by co-sputtering. The lowered interfacial energy resulted in larger grains in the compound-sputtered films as compared to those in the co-sputtered films. Ex situ annealing enabled a further increase in the grain size from 63.4 nm to 140 nm.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (Grant No. NRF-2014R1A1A2055961), and by KOREATECH. XPS analysis was performed at the Cooperative Equipment Center of the KOREATECH.
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry