Effects of interfacial suboxides and dangling bonds on tunneling current through nanometer-thick SiO2 layers

Eunjung Ko, Kwang Ryeol Lee, Hyoung Joon Choi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Quantum-mechanical tunneling of charge carriers through nanometer-thick SiO2 layers is one of the key issues in Si-based electronics. Here, we report first-principles transport calculations of charge-carrier tunneling through nanometer-thick SiO2 layers in Si/SiO2/Si structures. We find that tunneling of holes in the valence bands occurs mainly via oxygen 2p orbitals perpendicular to Si-O-Si bonds, and it can be enhanced greatly by interfacial suboxides and dangling bonds in Si/SiO2 interfaces. Electrons in the conduction bands show tunneling behaviors sensitive to their wave vectors parallel to the interfaces, reflecting the six conduction-band minima in the bulk Si. Our results provide atomistic description of tunneling currents through SiO2 layers, and suggest that leakage current will be blocked more effectively if suboxides and dangling bonds are reduced.

Original languageEnglish
Article number033303
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number3
DOIs
Publication statusPublished - 2011 Jul 11

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Dangling bonds
Conduction bands
Charge carriers
Electron tunneling
Valence bands
Leakage currents
Electronic equipment
Oxygen
charge carriers
conduction bands
Electrons
leakage
valence
orbitals
oxygen
electronics
electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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Effects of interfacial suboxides and dangling bonds on tunneling current through nanometer-thick SiO2 layers. / Ko, Eunjung; Lee, Kwang Ryeol; Choi, Hyoung Joon.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 84, No. 3, 033303, 11.07.2011.

Research output: Contribution to journalArticle

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