Effects of ion implantation on the electrical properties of Au/n-Si Schottky diodes

M. H. Joo, K. H. Lee, J. H. Song, S. Im

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

B and Si ion implantation for edge termination of Au Schottky diodes have been studied to enhance the breakdown voltages of the diodes. B ions of 30 keV were implanted with three doses of 1×1013, 1×1014, and 1×1015 B cm-2 to achieve edge-terminated Schottky diodes. For Si implantation, the energy of 70 keV was used with the same doses. Au Schottky diode implanted with a dose of 1×1013 B cm-2 shows the best results of the edge termination: a reverse leakage of about 1.5×10-3 A cm-2 at the breakdown voltage, 386 V. Unimplanted Schottky diode shows only 216 V at the breakdown event. Si implantation and high dose B implantation result in early breakdown and high current leakage compared to the low dose B implantation. It is concluded that the early breakdown and the high leakage are closely related to the density of ion-beam-induced defects near the end-of-range (EOR) region.

Original languageEnglish
Pages (from-to)224-228
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume71
Issue number1-3
DOIs
Publication statusPublished - 2000 Feb 14
EventThe European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors - Strasbourg, France
Duration: 1999 Jun 11999 Jun 4

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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