B and Si ion implantation for edge termination of Au Schottky diodes have been studied to enhance the breakdown voltages of the diodes. B ions of 30 keV were implanted with three doses of 1×1013, 1×1014, and 1×1015 B cm-2 to achieve edge-terminated Schottky diodes. For Si implantation, the energy of 70 keV was used with the same doses. Au Schottky diode implanted with a dose of 1×1013 B cm-2 shows the best results of the edge termination: a reverse leakage of about 1.5×10-3 A cm-2 at the breakdown voltage, 386 V. Unimplanted Schottky diode shows only 216 V at the breakdown event. Si implantation and high dose B implantation result in early breakdown and high current leakage compared to the low dose B implantation. It is concluded that the early breakdown and the high leakage are closely related to the density of ion-beam-induced defects near the end-of-range (EOR) region.
|Number of pages||5|
|Journal||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|Publication status||Published - 2000 Feb 14|
|Event||The European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors - Strasbourg, France|
Duration: 1999 Jun 1 → 1999 Jun 4
Bibliographical noteFunding Information:
This work is supported by 1998 Yonsei University Research Funds.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering