TY - GEN
T1 - Effects of laser drilling through silicon substrate on MOSFET device characteristics
AU - Song, Youngkyu
AU - Park, Chulhyun
AU - Kang, Junghan
AU - Sohn, Ik Bu
AU - Noh, Young Chul
AU - Lee, Jongmin
AU - Lee, Eung Jang
AU - Park, Seung Han
AU - Lee, Soogil
AU - Hong, Jongill
AU - Yun, Ilgu
PY - 2010
Y1 - 2010
N2 - The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling . The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.
AB - The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling . The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.
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U2 - 10.1109/INEC.2010.5424968
DO - 10.1109/INEC.2010.5424968
M3 - Conference contribution
AN - SCOPUS:77951654970
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 1167
EP - 1168
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -