Effects of laser drilling through silicon substrate on MOSFET device characteristics

Youngkyu Song, Chulhyun Park, Junghan Kang, Ik Bu Sohn, Young Chul Noh, Jongmin Lee, Eung Jang Lee, Seung Han Park, Soogil Lee, Jongill Hong, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling . The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1167-1168
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Song, Y., Park, C., Kang, J., Sohn, I. B., Noh, Y. C., Lee, J., Lee, E. J., Park, S. H., Lee, S., Hong, J., & Yun, I. (2010). Effects of laser drilling through silicon substrate on MOSFET device characteristics. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1167-1168). [5424968] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424968