Effects of laser drilling through silicon substrate on MOSFET device characteristics

Youngkyu Song; Chulhyun Park; Junghan Kang; Ik Bu Sohn; Young Chul Noh; Jongmin Lee; Eung Jang Lee; Seung Han Park; Soogil Lee; Jongill Hong; Ilgu Yun

doi:10.1109/INEC.2010.5424968

Effects of laser drilling through silicon substrate on MOSFET device characteristics

Youngkyu Song, Chulhyun Park, Junghan Kang, Ik Bu Sohn, Young Chul Noh, Jongmin Lee, Eung Jang Lee, Seung Han Park, Soogil Lee, Jongill Hong, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling . The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	1167-1168
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424968
Publication status	Published - 2010 May 5
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country	China
City	Hongkong
Period	10/1/3 → 10/1/8

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2010.5424968

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Song, Y., Park, C., Kang, J., Sohn, I. B., Noh, Y. C., Lee, J., Lee, E. J., Park, S. H., Lee, S., Hong, J., & Yun, I. (2010). Effects of laser drilling through silicon substrate on MOSFET device characteristics. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1167-1168). [5424968] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424968

Song, Youngkyu ; Park, Chulhyun ; Kang, Junghan ; Sohn, Ik Bu ; Noh, Young Chul ; Lee, Jongmin ; Lee, Eung Jang ; Park, Seung Han ; Lee, Soogil ; Hong, Jongill ; Yun, Ilgu. / Effects of laser drilling through silicon substrate on MOSFET device characteristics. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 1167-1168 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

@inproceedings{a252a94ce3d844fe8a31ae152efd47af,

title = "Effects of laser drilling through silicon substrate on MOSFET device characteristics",

abstract = "The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling . The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.",

author = "Youngkyu Song and Chulhyun Park and Junghan Kang and Sohn, {Ik Bu} and Noh, {Young Chul} and Jongmin Lee and Lee, {Eung Jang} and Park, {Seung Han} and Soogil Lee and Jongill Hong and Ilgu Yun",

year = "2010",

month = may,

day = "5",

doi = "10.1109/INEC.2010.5424968",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "1167--1168",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Song, Y, Park, C, Kang, J, Sohn, IB, Noh, YC, Lee, J, Lee, EJ, Park, SH, Lee, S, Hong, J & Yun, I 2010, Effects of laser drilling through silicon substrate on MOSFET device characteristics. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424968, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 1167-1168, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424968

Effects of laser drilling through silicon substrate on MOSFET device characteristics. / Song, Youngkyu; Park, Chulhyun; Kang, Junghan; Sohn, Ik Bu; Noh, Young Chul; Lee, Jongmin; Lee, Eung Jang; Park, Seung Han; Lee, Soogil; Hong, Jongill ; Yun, Ilgu.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1167-1168 5424968 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Song, Youngkyu

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N2 - The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling . The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.

AB - The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling . The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.

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