Abstract
The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling . The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.
| Original language | English |
|---|---|
| Title of host publication | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
| Pages | 1167-1168 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2010 May 5 |
| Event | 2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8 |
Publication series
| Name | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
|---|
Other
| Other | 2010 3rd International Nanoelectronics Conference, INEC 2010 |
|---|---|
| Country | China |
| City | Hongkong |
| Period | 10/1/3 → 10/1/8 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
}
Effects of laser drilling through silicon substrate on MOSFET device characteristics. / Song, Youngkyu; Park, Chulhyun; Kang, Junghan; Sohn, Ik Bu; Noh, Young Chul; Lee, Jongmin; Lee, Eung Jang; Park, Seung Han; Lee, Soogil; Hong, Jongill; Yun, Ilgu.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1167-1168 5424968 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Effects of laser drilling through silicon substrate on MOSFET device characteristics
AU - Song, Youngkyu
AU - Park, Chulhyun
AU - Kang, Junghan
AU - Sohn, Ik Bu
AU - Noh, Young Chul
AU - Lee, Jongmin
AU - Lee, Eung Jang
AU - Park, Seung Han
AU - Lee, Soogil
AU - Hong, Jongill
AU - Yun, Ilgu
PY - 2010/5/5
Y1 - 2010/5/5
N2 - The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling . The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.
AB - The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling . The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.
UR - http://www.scopus.com/inward/record.url?scp=77951654970&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951654970&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424968
DO - 10.1109/INEC.2010.5424968
M3 - Conference contribution
AN - SCOPUS:77951654970
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 1167
EP - 1168
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
ER -