We report the structural and electrical properties of Li-doped ZnO (LZO) films, which are spin-coated via a simple solution process using Zn and Li precursor solutions. The Li doping improves the crystallinity of the ZnO films, and the LZO films exhibit a relatively dense and smooth surface morphology compared to that of the undoped ZnO films. Back-gated LZO thin-film transistors (TFTs) are fabricated onto a heavily p-doped Si substrate with a SiO2 gate dielectric, and operated in enhancement mode. In the case of the LZO TFT with a Li doping concentration of 0.50 mol%, the highest field-effect mobility of 5.18 cm2 V−1 s−1 is obtained; the on/off current ratio and subthreshold swing are 107 and 1.2 V dec−1, respectively. These results demonstrate that Li doping can effectively modulate the structural and electrical properties of ZnO-based films, facilitating the fabrication of LZO TFTs with enhanced performance.
Bibliographical noteFunding Information:
This work was supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT ( 2017M3D1A1040828 ), Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2015R1D1A1A01058982 ), Nano Material Technology Development Program of the National Research Foundation of Korea (NRF) by the Ministry of Science and ICT ( 2016M3A7B4909942 ), and the GIST Research Institute (GRI). H. An and J.M. Myoung acknowledge the financial support from the LG Display Academic Industrial Cooperation Program.
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry