Effects of Li doping on the structural and electrical properties of solution-processed ZnO films for high-performance thin-film transistors

Kyuhyun Bang, Gi Cheol Son, Myungwoo Son, Ji Hyun Jun, Heeju An, Kwang Hyeon Baik, Jae Min Myoung, Moon Ho Ham

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report the structural and electrical properties of Li-doped ZnO (LZO) films, which are spin-coated via a simple solution process using Zn and Li precursor solutions. The Li doping improves the crystallinity of the ZnO films, and the LZO films exhibit a relatively dense and smooth surface morphology compared to that of the undoped ZnO films. Back-gated LZO thin-film transistors (TFTs) are fabricated onto a heavily p-doped Si substrate with a SiO2 gate dielectric, and operated in enhancement mode. In the case of the LZO TFT with a Li doping concentration of 0.50 mol%, the highest field-effect mobility of 5.18 cm2 V−1 s−1 is obtained; the on/off current ratio and subthreshold swing are 107 and 1.2 V dec−1, respectively. These results demonstrate that Li doping can effectively modulate the structural and electrical properties of ZnO-based films, facilitating the fabrication of LZO TFTs with enhanced performance.

Original languageEnglish
Pages (from-to)41-46
Number of pages6
JournalJournal of Alloys and Compounds
Volume739
DOIs
Publication statusPublished - 2018 Mar 30

Fingerprint

Thin film transistors
Structural properties
Electric properties
Doping (additives)
Gate dielectrics
Surface morphology
Fabrication
Substrates

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Bang, Kyuhyun ; Son, Gi Cheol ; Son, Myungwoo ; Jun, Ji Hyun ; An, Heeju ; Baik, Kwang Hyeon ; Myoung, Jae Min ; Ham, Moon Ho. / Effects of Li doping on the structural and electrical properties of solution-processed ZnO films for high-performance thin-film transistors. In: Journal of Alloys and Compounds. 2018 ; Vol. 739. pp. 41-46.
@article{7c7fd884c1464436a65419665c4027cc,
title = "Effects of Li doping on the structural and electrical properties of solution-processed ZnO films for high-performance thin-film transistors",
abstract = "We report the structural and electrical properties of Li-doped ZnO (LZO) films, which are spin-coated via a simple solution process using Zn and Li precursor solutions. The Li doping improves the crystallinity of the ZnO films, and the LZO films exhibit a relatively dense and smooth surface morphology compared to that of the undoped ZnO films. Back-gated LZO thin-film transistors (TFTs) are fabricated onto a heavily p-doped Si substrate with a SiO2 gate dielectric, and operated in enhancement mode. In the case of the LZO TFT with a Li doping concentration of 0.50 mol{\%}, the highest field-effect mobility of 5.18 cm2 V−1 s−1 is obtained; the on/off current ratio and subthreshold swing are 107 and 1.2 V dec−1, respectively. These results demonstrate that Li doping can effectively modulate the structural and electrical properties of ZnO-based films, facilitating the fabrication of LZO TFTs with enhanced performance.",
author = "Kyuhyun Bang and Son, {Gi Cheol} and Myungwoo Son and Jun, {Ji Hyun} and Heeju An and Baik, {Kwang Hyeon} and Myoung, {Jae Min} and Ham, {Moon Ho}",
year = "2018",
month = "3",
day = "30",
doi = "10.1016/j.jallcom.2017.12.186",
language = "English",
volume = "739",
pages = "41--46",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",

}

Effects of Li doping on the structural and electrical properties of solution-processed ZnO films for high-performance thin-film transistors. / Bang, Kyuhyun; Son, Gi Cheol; Son, Myungwoo; Jun, Ji Hyun; An, Heeju; Baik, Kwang Hyeon; Myoung, Jae Min; Ham, Moon Ho.

In: Journal of Alloys and Compounds, Vol. 739, 30.03.2018, p. 41-46.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of Li doping on the structural and electrical properties of solution-processed ZnO films for high-performance thin-film transistors

AU - Bang, Kyuhyun

AU - Son, Gi Cheol

AU - Son, Myungwoo

AU - Jun, Ji Hyun

AU - An, Heeju

AU - Baik, Kwang Hyeon

AU - Myoung, Jae Min

AU - Ham, Moon Ho

PY - 2018/3/30

Y1 - 2018/3/30

N2 - We report the structural and electrical properties of Li-doped ZnO (LZO) films, which are spin-coated via a simple solution process using Zn and Li precursor solutions. The Li doping improves the crystallinity of the ZnO films, and the LZO films exhibit a relatively dense and smooth surface morphology compared to that of the undoped ZnO films. Back-gated LZO thin-film transistors (TFTs) are fabricated onto a heavily p-doped Si substrate with a SiO2 gate dielectric, and operated in enhancement mode. In the case of the LZO TFT with a Li doping concentration of 0.50 mol%, the highest field-effect mobility of 5.18 cm2 V−1 s−1 is obtained; the on/off current ratio and subthreshold swing are 107 and 1.2 V dec−1, respectively. These results demonstrate that Li doping can effectively modulate the structural and electrical properties of ZnO-based films, facilitating the fabrication of LZO TFTs with enhanced performance.

AB - We report the structural and electrical properties of Li-doped ZnO (LZO) films, which are spin-coated via a simple solution process using Zn and Li precursor solutions. The Li doping improves the crystallinity of the ZnO films, and the LZO films exhibit a relatively dense and smooth surface morphology compared to that of the undoped ZnO films. Back-gated LZO thin-film transistors (TFTs) are fabricated onto a heavily p-doped Si substrate with a SiO2 gate dielectric, and operated in enhancement mode. In the case of the LZO TFT with a Li doping concentration of 0.50 mol%, the highest field-effect mobility of 5.18 cm2 V−1 s−1 is obtained; the on/off current ratio and subthreshold swing are 107 and 1.2 V dec−1, respectively. These results demonstrate that Li doping can effectively modulate the structural and electrical properties of ZnO-based films, facilitating the fabrication of LZO TFTs with enhanced performance.

UR - http://www.scopus.com/inward/record.url?scp=85039444333&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85039444333&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2017.12.186

DO - 10.1016/j.jallcom.2017.12.186

M3 - Article

AN - SCOPUS:85039444333

VL - 739

SP - 41

EP - 46

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

ER -