We report the structural and electrical properties of Li-doped ZnO (LZO) films, which are spin-coated via a simple solution process using Zn and Li precursor solutions. The Li doping improves the crystallinity of the ZnO films, and the LZO films exhibit a relatively dense and smooth surface morphology compared to that of the undoped ZnO films. Back-gated LZO thin-film transistors (TFTs) are fabricated onto a heavily p-doped Si substrate with a SiO2 gate dielectric, and operated in enhancement mode. In the case of the LZO TFT with a Li doping concentration of 0.50 mol%, the highest field-effect mobility of 5.18 cm2 V−1 s−1 is obtained; the on/off current ratio and subthreshold swing are 107 and 1.2 V dec−1, respectively. These results demonstrate that Li doping can effectively modulate the structural and electrical properties of ZnO-based films, facilitating the fabrication of LZO TFTs with enhanced performance.
Bibliographical noteFunding Information:
This work was supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT ( 2017M3D1A1040828 ), Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2015R1D1A1A01058982 ), Nano Material Technology Development Program of the National Research Foundation of Korea (NRF) by the Ministry of Science and ICT ( 2016M3A7B4909942 ), and the GIST Research Institute (GRI). H. An and J.M. Myoung acknowledge the financial support from the LG Display Academic Industrial Cooperation Program.
© 2017 Elsevier B.V.
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry