Effects of mechanical stresses on the reliability of low-temperature polycrystalline silicon thin film transistors for foldable displays

Min Soo Bae, Chuntaek Park, Dongseok Shin, Sang Myung Lee, Ilgu Yun

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

This paper investigates the mechanical reliability of low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) for foldable display. Both compressive and tensile directions of mechanical stresses were applied for different types of mechanical stresses, such as dynamic and static mechanical stresses. The electrical characteristics of tested n-channel TFTs under mechanical stress conditions were analyzed based on several key parameters, including the threshold voltage (Vth), field effect mobility (μFE), maximum drain current (ID.MAX) and subthreshold swing (Ssub). For both cases of dynamic and static mechanical stresses, increase of Vth and decrease of μFE and ID.MAX were observed in the compressive direction. This trend was inversed when tensile stress was applied. The degradation of electrical characteristics originates from the change of lattice constant after mechanical stress. However, Ssub increases under dynamic tensile stress while it remains unchanged within 5% under static tensile stress. Transient analysis while bent condition was conducted to investigate the change of parameters in time.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalSolid-State Electronics
Volume133
DOIs
Publication statusPublished - 2017 Jul 1

Bibliographical note

Funding Information:
This research was supported by the LG Display in Republic of Korea. This work was supported by the Institute of BioMed-IT, Energy-IT, and Smart-IT Technology (BEST), a Brain Korea 21 plus program, Yonsei University in Republic of Korea.

Publisher Copyright:
© 2017 Elsevier Ltd

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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