Effects of metal electrode on the electrical performance of amorphous In-Ga-Zn-O thin film transistor

Jung Ryoul Yim, Sung Yup Jung, Han Wool Yeon, Jang-Yeon Kwon, Young Joo Lee, Je Hun Lee, Young Chang Joo

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Effects of metal electrode on the electrical performance of amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT) have been studied. Electrical performances and interface stability between Mo, Al, and Cu electrode and a-IGZO semiconductor have been investigated before and after air-annealing. No inter-diffusion and interfacial reaction has been observed between Mo and a-IGZO and the turn-on voltage of the Mo electrode TFT was 0 V after annealing. As for Al, Al oxide was formed at the interface, and the number of conduction electrons in a-IGZO increased. Thus, a negative turn-on voltage was observed after air-annealing. As for Cu, Cu diffused into a-IGZO during air-annealing and acted as an acceptor. Therefore the a-IGZO TFT with a Cu electrode had a positive turn-on voltage and sub-threshold slope increased after airannealing. These results indicate that the transistor performance can be affected by the metal types due to inter-diffusion or interfacial reaction between metal and a-IGZO.

Original languageEnglish
Article number011401
JournalJapanese Journal of Applied Physics
Volume51
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

Thin film transistors
transistors
Electrodes
annealing
electrodes
thin films
Metals
metals
air
electric potential
Annealing
interface stability
Surface chemistry
conduction electrons
Electric potential
Air
slopes
thresholds
oxides
Transistors

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Yim, Jung Ryoul ; Jung, Sung Yup ; Yeon, Han Wool ; Kwon, Jang-Yeon ; Lee, Young Joo ; Lee, Je Hun ; Joo, Young Chang. / Effects of metal electrode on the electrical performance of amorphous In-Ga-Zn-O thin film transistor. In: Japanese Journal of Applied Physics. 2012 ; Vol. 51, No. 1.
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abstract = "Effects of metal electrode on the electrical performance of amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT) have been studied. Electrical performances and interface stability between Mo, Al, and Cu electrode and a-IGZO semiconductor have been investigated before and after air-annealing. No inter-diffusion and interfacial reaction has been observed between Mo and a-IGZO and the turn-on voltage of the Mo electrode TFT was 0 V after annealing. As for Al, Al oxide was formed at the interface, and the number of conduction electrons in a-IGZO increased. Thus, a negative turn-on voltage was observed after air-annealing. As for Cu, Cu diffused into a-IGZO during air-annealing and acted as an acceptor. Therefore the a-IGZO TFT with a Cu electrode had a positive turn-on voltage and sub-threshold slope increased after airannealing. These results indicate that the transistor performance can be affected by the metal types due to inter-diffusion or interfacial reaction between metal and a-IGZO.",
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Effects of metal electrode on the electrical performance of amorphous In-Ga-Zn-O thin film transistor. / Yim, Jung Ryoul; Jung, Sung Yup; Yeon, Han Wool; Kwon, Jang-Yeon; Lee, Young Joo; Lee, Je Hun; Joo, Young Chang.

In: Japanese Journal of Applied Physics, Vol. 51, No. 1, 011401, 01.01.2012.

Research output: Contribution to journalArticle

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AU - Jung, Sung Yup

AU - Yeon, Han Wool

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AU - Lee, Young Joo

AU - Lee, Je Hun

AU - Joo, Young Chang

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