Effects of Mg-codoping on the 1540-nm photoluminescence of Er-implanted GaN

Sangsig Kim, Jin Ki Hong, Byung Moo Moon, Man Young Sung, Jae Min Myoung, S. G. Bishop

Research output: Contribution to journalArticle

Abstract

The ∼ 1540-nm Er3+ photoluminescence (PL) and photoluminescence excitation (PLE) spectra of Er-implanted Mg-codoped GaN (GaN:Er+Mg) indicate that the excitation efficiency of a specific Er3+ center among different Er3+ centers existing in Er-implanted GaN is selectively enhanced, compared to Er-implanted undoped GaN (GaN:Er). In GaN:Er+Mg, the 1540-nm PL peaks characteristic of the so-called "violet-pumped" Er3+ center and the ∼ 2.8-3.4 eV (violet) PLE band are significantly strengthened by the Mg-doping. The intra-f absorption PLE bands associated with this "violet-pumped" center are also enhanced by this doping. The 1540-nm PL peaks originating from the "violet-pumped" center dominate the above-gap-excited Er3+ PL spectrum of GaN:Er+Mg whereas they are unobservable under above-gap excitation in GaN:Er. All of these results indicate that Mg doping increases the efficiency of trap-mediated excitation of Er3+ emission in Er-implanted GaN.

Original languageEnglish
Pages (from-to)993-997
Number of pages5
JournalJournal of the Korean Physical Society
Volume37
Issue number6
Publication statusPublished - 2000 Dec 1

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photoluminescence
excitation
traps

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, S., Hong, J. K., Moon, B. M., Sung, M. Y., Myoung, J. M., & Bishop, S. G. (2000). Effects of Mg-codoping on the 1540-nm photoluminescence of Er-implanted GaN. Journal of the Korean Physical Society, 37(6), 993-997.
Kim, Sangsig ; Hong, Jin Ki ; Moon, Byung Moo ; Sung, Man Young ; Myoung, Jae Min ; Bishop, S. G. / Effects of Mg-codoping on the 1540-nm photoluminescence of Er-implanted GaN. In: Journal of the Korean Physical Society. 2000 ; Vol. 37, No. 6. pp. 993-997.
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title = "Effects of Mg-codoping on the 1540-nm photoluminescence of Er-implanted GaN",
abstract = "The ∼ 1540-nm Er3+ photoluminescence (PL) and photoluminescence excitation (PLE) spectra of Er-implanted Mg-codoped GaN (GaN:Er+Mg) indicate that the excitation efficiency of a specific Er3+ center among different Er3+ centers existing in Er-implanted GaN is selectively enhanced, compared to Er-implanted undoped GaN (GaN:Er). In GaN:Er+Mg, the 1540-nm PL peaks characteristic of the so-called {"}violet-pumped{"} Er3+ center and the ∼ 2.8-3.4 eV (violet) PLE band are significantly strengthened by the Mg-doping. The intra-f absorption PLE bands associated with this {"}violet-pumped{"} center are also enhanced by this doping. The 1540-nm PL peaks originating from the {"}violet-pumped{"} center dominate the above-gap-excited Er3+ PL spectrum of GaN:Er+Mg whereas they are unobservable under above-gap excitation in GaN:Er. All of these results indicate that Mg doping increases the efficiency of trap-mediated excitation of Er3+ emission in Er-implanted GaN.",
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Kim, S, Hong, JK, Moon, BM, Sung, MY, Myoung, JM & Bishop, SG 2000, 'Effects of Mg-codoping on the 1540-nm photoluminescence of Er-implanted GaN', Journal of the Korean Physical Society, vol. 37, no. 6, pp. 993-997.

Effects of Mg-codoping on the 1540-nm photoluminescence of Er-implanted GaN. / Kim, Sangsig; Hong, Jin Ki; Moon, Byung Moo; Sung, Man Young; Myoung, Jae Min; Bishop, S. G.

In: Journal of the Korean Physical Society, Vol. 37, No. 6, 01.12.2000, p. 993-997.

Research output: Contribution to journalArticle

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T1 - Effects of Mg-codoping on the 1540-nm photoluminescence of Er-implanted GaN

AU - Kim, Sangsig

AU - Hong, Jin Ki

AU - Moon, Byung Moo

AU - Sung, Man Young

AU - Myoung, Jae Min

AU - Bishop, S. G.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The ∼ 1540-nm Er3+ photoluminescence (PL) and photoluminescence excitation (PLE) spectra of Er-implanted Mg-codoped GaN (GaN:Er+Mg) indicate that the excitation efficiency of a specific Er3+ center among different Er3+ centers existing in Er-implanted GaN is selectively enhanced, compared to Er-implanted undoped GaN (GaN:Er). In GaN:Er+Mg, the 1540-nm PL peaks characteristic of the so-called "violet-pumped" Er3+ center and the ∼ 2.8-3.4 eV (violet) PLE band are significantly strengthened by the Mg-doping. The intra-f absorption PLE bands associated with this "violet-pumped" center are also enhanced by this doping. The 1540-nm PL peaks originating from the "violet-pumped" center dominate the above-gap-excited Er3+ PL spectrum of GaN:Er+Mg whereas they are unobservable under above-gap excitation in GaN:Er. All of these results indicate that Mg doping increases the efficiency of trap-mediated excitation of Er3+ emission in Er-implanted GaN.

AB - The ∼ 1540-nm Er3+ photoluminescence (PL) and photoluminescence excitation (PLE) spectra of Er-implanted Mg-codoped GaN (GaN:Er+Mg) indicate that the excitation efficiency of a specific Er3+ center among different Er3+ centers existing in Er-implanted GaN is selectively enhanced, compared to Er-implanted undoped GaN (GaN:Er). In GaN:Er+Mg, the 1540-nm PL peaks characteristic of the so-called "violet-pumped" Er3+ center and the ∼ 2.8-3.4 eV (violet) PLE band are significantly strengthened by the Mg-doping. The intra-f absorption PLE bands associated with this "violet-pumped" center are also enhanced by this doping. The 1540-nm PL peaks originating from the "violet-pumped" center dominate the above-gap-excited Er3+ PL spectrum of GaN:Er+Mg whereas they are unobservable under above-gap excitation in GaN:Er. All of these results indicate that Mg doping increases the efficiency of trap-mediated excitation of Er3+ emission in Er-implanted GaN.

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