Effects of Mn flux on ferromagnetic properties of (Ga,Mn)N films grown by PEMBE

Kwang Soo Huh; Min Chang Jeong; Moon Ho Ham; Jae Min Myoung; Woo Young Lee; Jeung Mi Lee; Suk Hee Han

doi:10.1016/j.ssc.2003.08.002

Effects of Mn flux on ferromagnetic properties of (Ga,Mn)N films grown by PEMBE

Kwang Soo Huh, Min Chang Jeong, Moon Ho Ham, Jae Min Myoung, Woo Young Lee, Jeung Mi Lee, Suk Hee Han

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Effects of Mn flux on the magnetic properties of (Ga,Mn)N films grown on sapphire substrate by plasma-enhanced molecular beam epitaxy (PEMBE) discussed. The (Ga,Mn)N thin films were found to exhibit ferromagnetic ordering at room temperature without any secondary phases by X-ray diffraction and alternating gradient magnetometer. It is found that, although the surface morphology and the electrical properties are degraded with increasing Mn concentration, the magnetic properties of the films improve.

Original language	English
Pages (from-to)	119-123
Number of pages	5
Journal	Solid State Communications
Volume	128
Issue number	4
DOIs	https://doi.org/10.1016/j.ssc.2003.08.002
Publication status	Published - 2003 Oct

Bibliographical note

Funding Information:
This work was supported by Yonsei University Research Board and KIST vision 21 program.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2003.08.002

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title = "Effects of Mn flux on ferromagnetic properties of (Ga,Mn)N films grown by PEMBE",

abstract = "Effects of Mn flux on the magnetic properties of (Ga,Mn)N films grown on sapphire substrate by plasma-enhanced molecular beam epitaxy (PEMBE) discussed. The (Ga,Mn)N thin films were found to exhibit ferromagnetic ordering at room temperature without any secondary phases by X-ray diffraction and alternating gradient magnetometer. It is found that, although the surface morphology and the electrical properties are degraded with increasing Mn concentration, the magnetic properties of the films improve.",

author = "Huh, {Kwang Soo} and Jeong, {Min Chang} and Ham, {Moon Ho} and Myoung, {Jae Min} and Lee, {Woo Young} and Lee, {Jeung Mi} and Han, {Suk Hee}",

note = "Funding Information: This work was supported by Yonsei University Research Board and KIST vision 21 program.",

year = "2003",

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doi = "10.1016/j.ssc.2003.08.002",

language = "English",

volume = "128",

pages = "119--123",

journal = "Solid State Communications",

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T1 - Effects of Mn flux on ferromagnetic properties of (Ga,Mn)N films grown by PEMBE

AU - Huh, Kwang Soo

AU - Jeong, Min Chang

AU - Ham, Moon Ho

AU - Myoung, Jae Min

AU - Lee, Woo Young

AU - Lee, Jeung Mi

AU - Han, Suk Hee

N1 - Funding Information: This work was supported by Yonsei University Research Board and KIST vision 21 program.

PY - 2003/10

Y1 - 2003/10

N2 - Effects of Mn flux on the magnetic properties of (Ga,Mn)N films grown on sapphire substrate by plasma-enhanced molecular beam epitaxy (PEMBE) discussed. The (Ga,Mn)N thin films were found to exhibit ferromagnetic ordering at room temperature without any secondary phases by X-ray diffraction and alternating gradient magnetometer. It is found that, although the surface morphology and the electrical properties are degraded with increasing Mn concentration, the magnetic properties of the films improve.

AB - Effects of Mn flux on the magnetic properties of (Ga,Mn)N films grown on sapphire substrate by plasma-enhanced molecular beam epitaxy (PEMBE) discussed. The (Ga,Mn)N thin films were found to exhibit ferromagnetic ordering at room temperature without any secondary phases by X-ray diffraction and alternating gradient magnetometer. It is found that, although the surface morphology and the electrical properties are degraded with increasing Mn concentration, the magnetic properties of the films improve.

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JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

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Effects of Mn flux on ferromagnetic properties of (Ga,Mn)N films grown by PEMBE

Abstract

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