Effects of nitrogen addition on the structure and field emission properties of amorphous carbon

Eung Joon Chi, Jae Yeob Shim, Hong Koo Baik

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

The films of amorphous carbon with different amount of incorporated nitrogen are deposited by helical resonator plasma enhanced chemical vapor deposition using CH4, Ar, and N2 gas mixture. As the increase of nitrogen in the films, the optical band gap and sp3 bond fraction decreased. The higher field emission current and the lower turn-on voltage are obtained from the sample of the higher nitrogen content. The increase of the conducting part of the films and the role of nitrogen as an electrical donor are responsible for the enhanced field emission.

Original languageEnglish
Pages204-205
Number of pages2
Publication statusPublished - 1998
EventProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA
Duration: 1998 Jul 191998 Jul 24

Other

OtherProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
CityAsheville, NC, USA
Period98/7/1998/7/24

All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces

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