The films of amorphous carbon with different amounts of incorporated nitrogen are deposited by helical resonator plasma enhanced chemical vapor deposition using CH4, Ar, and N2 gas mixtures. As the nitrogen content in the films increases, the optical band gap and sp3 bond fraction decreased. The higher field emission current and the lower turn-on voltage are obtained from the sample of the higher nitrogen content. The calculated emission barrier heights for a-C:N (5/5) and (10/0) are 0.76 and 0.70 times that for a-C, respectively. The increase of the conducting part of the films and the role of nitrogen as an electrical donor are responsible for the enhanced field emission.
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 1999 Dec 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering