Effects of nitrogen doping and working pressure on the crystallization of GeiSb 4 Te 7 thin films for PRAM applications

Hyung Keun Kim, Seung Yun Lee, Doo Jin Choi, Sangwoo Shin, Hyung Hee Cho, Jae Sung Roh

Research output: Contribution to journalArticle

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Abstract

The phase change random access memory (PRAM) has recently been ascending to become the most potential candidate for the next-generation nonvolatile memory. In this paper, we deposited Ge 1 Sb 4 Te 7 as a phase change material on a glass substrate by DC magnetron sputtering at various working pressures of 5 × 10 -3 , 9 × 10 -3 and 13 × 10 -3 Torr and we performed nitrogen doping by flowing nitrogen gas during deposition. To verify the nitrogen doping we analyzed the secondary ion mass spectrometry (SIMS) data and observed the presence of nitrogen-doping contents. We measured the sheet resistance and the thickness reduction. We observed a reduction of the sheet resistance and the thickness of the films that had been annealed, we also observed an increase of the sheet resistance from 4.3 × 10 3 Ohm/sq to 2.8 × 10 5 Ohm/sq with additional nitrogen doping after annealing in the case of the film deposited at 9 × 10 -3 Torr. Through the 3-w thermal conductivity measurements, we observed an increase in the thermal conductivity from 0.37 to 0.49 W/mK and a decrease with nitrogen doping from 0.49 to 0.43 for the films that had been annealed. In X-ray diffraction (XRD) results, FCC and HCP peaks were observed at annealing temperatures of 175 °C and 300 °C and the role of nitrogen doping that disturb the crystallization during a phase change was also observed.

Original languageEnglish
Pages (from-to)1896-1900
Number of pages5
JournalJournal of the Korean Physical Society
Volume55
Issue number5 PART 1
DOIs
Publication statusPublished - 2009 Nov 1

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random access memory
crystallization
nitrogen
thin films
thermal conductivity
annealing
phase change materials
secondary ion mass spectrometry
magnetron sputtering
direct current
glass
diffraction
gases
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Effects of nitrogen doping and working pressure on the crystallization of GeiSb 4 Te 7 thin films for PRAM applications",
abstract = "The phase change random access memory (PRAM) has recently been ascending to become the most potential candidate for the next-generation nonvolatile memory. In this paper, we deposited Ge 1 Sb 4 Te 7 as a phase change material on a glass substrate by DC magnetron sputtering at various working pressures of 5 × 10 -3 , 9 × 10 -3 and 13 × 10 -3 Torr and we performed nitrogen doping by flowing nitrogen gas during deposition. To verify the nitrogen doping we analyzed the secondary ion mass spectrometry (SIMS) data and observed the presence of nitrogen-doping contents. We measured the sheet resistance and the thickness reduction. We observed a reduction of the sheet resistance and the thickness of the films that had been annealed, we also observed an increase of the sheet resistance from 4.3 × 10 3 Ohm/sq to 2.8 × 10 5 Ohm/sq with additional nitrogen doping after annealing in the case of the film deposited at 9 × 10 -3 Torr. Through the 3-w thermal conductivity measurements, we observed an increase in the thermal conductivity from 0.37 to 0.49 W/mK and a decrease with nitrogen doping from 0.49 to 0.43 for the films that had been annealed. In X-ray diffraction (XRD) results, FCC and HCP peaks were observed at annealing temperatures of 175 °C and 300 °C and the role of nitrogen doping that disturb the crystallization during a phase change was also observed.",
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Effects of nitrogen doping and working pressure on the crystallization of GeiSb 4 Te 7 thin films for PRAM applications . / Kim, Hyung Keun; Lee, Seung Yun; Choi, Doo Jin; Shin, Sangwoo; Cho, Hyung Hee; Roh, Jae Sung.

In: Journal of the Korean Physical Society, Vol. 55, No. 5 PART 1, 01.11.2009, p. 1896-1900.

Research output: Contribution to journalArticle

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T1 - Effects of nitrogen doping and working pressure on the crystallization of GeiSb 4 Te 7 thin films for PRAM applications

AU - Kim, Hyung Keun

AU - Lee, Seung Yun

AU - Choi, Doo Jin

AU - Shin, Sangwoo

AU - Cho, Hyung Hee

AU - Roh, Jae Sung

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AB - The phase change random access memory (PRAM) has recently been ascending to become the most potential candidate for the next-generation nonvolatile memory. In this paper, we deposited Ge 1 Sb 4 Te 7 as a phase change material on a glass substrate by DC magnetron sputtering at various working pressures of 5 × 10 -3 , 9 × 10 -3 and 13 × 10 -3 Torr and we performed nitrogen doping by flowing nitrogen gas during deposition. To verify the nitrogen doping we analyzed the secondary ion mass spectrometry (SIMS) data and observed the presence of nitrogen-doping contents. We measured the sheet resistance and the thickness reduction. We observed a reduction of the sheet resistance and the thickness of the films that had been annealed, we also observed an increase of the sheet resistance from 4.3 × 10 3 Ohm/sq to 2.8 × 10 5 Ohm/sq with additional nitrogen doping after annealing in the case of the film deposited at 9 × 10 -3 Torr. Through the 3-w thermal conductivity measurements, we observed an increase in the thermal conductivity from 0.37 to 0.49 W/mK and a decrease with nitrogen doping from 0.49 to 0.43 for the films that had been annealed. In X-ray diffraction (XRD) results, FCC and HCP peaks were observed at annealing temperatures of 175 °C and 300 °C and the role of nitrogen doping that disturb the crystallization during a phase change was also observed.

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