Effects of nitrogen doping on device characteristics of InSnO thin film transistor

Chang Eun Kim, Ilgu Yun

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The effects of nitrogen doping on the performance of InSnO thin film transistor were investigated. When the nitrogen was doped in the InSnO channel, device characteristics such as turn-on voltage, subthreshold swing, field effect mobility, and on/off current ratio were enhanced. The N 2 insertion in the deposition process decreased the density of the interface trap states and enhanced the crystallinity of the InSnO channel layer. These results indicate that device characteristics can be improved by nitrogen doping in the deposition process.

Original languageEnglish
Article number013501
JournalApplied Physics Letters
Volume100
Issue number1
DOIs
Publication statusPublished - 2012 Jan 2

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transistors
nitrogen
thin films
insertion
crystallinity
traps
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Effects of nitrogen doping on device characteristics of InSnO thin film transistor. / Eun Kim, Chang; Yun, Ilgu.

In: Applied Physics Letters, Vol. 100, No. 1, 013501, 02.01.2012.

Research output: Contribution to journalArticle

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