Effects of nitrogen on endurance of N-doped Ge2Sb 2Te5 films during laser-induced reversible switching

Kihoon Do, Dokyu Lee, Dae Hong Ko, Hyunchul Sohn, Mann Ho Cho

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Void formation and compositional change in nitrogen doped Ge 2Sb2Te5 (NGST) films during repeated phase transformations were examined. Stable reversible switching behavior between the crystalline and melt-quenched phase of NGST films containing 5 nitrogen was examined using laser irradiation on a nanosecond time scale. Transmission electron micrographs indicated that with repeated phase transformation, void formation and subsequent coalescing and movement to the top and bottom interfaces with "SiO"2 layers in NGST occurred in both amorphous and crystalline states. Moreover, void formation at the grain boundaries of crystalline NGST was clearly observed. Compositional change around voids also occurred, which was confirmed using energy dispersive spectroscopy. Void formation and compositional change during repeated reversible switching can cause serious issues related to the reliability of NGST materials during actual phase-change random access memory device operations.

Original languageEnglish
Pages (from-to)H390-H393
JournalJournal of the Electrochemical Society
Volume158
Issue number4
DOIs
Publication statusPublished - 2011 Apr 29

Fingerprint

endurance
voids
Durability
Nitrogen
Crystalline materials
nitrogen
Lasers
Phase transitions
lasers
phase transformations
Laser beam effects
Energy dispersive spectroscopy
Grain boundaries
random access memory
Data storage equipment
Electrons
coalescing
grain boundaries
irradiation
causes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

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abstract = "Void formation and compositional change in nitrogen doped Ge 2Sb2Te5 (NGST) films during repeated phase transformations were examined. Stable reversible switching behavior between the crystalline and melt-quenched phase of NGST films containing 5 nitrogen was examined using laser irradiation on a nanosecond time scale. Transmission electron micrographs indicated that with repeated phase transformation, void formation and subsequent coalescing and movement to the top and bottom interfaces with {"}SiO{"}2 layers in NGST occurred in both amorphous and crystalline states. Moreover, void formation at the grain boundaries of crystalline NGST was clearly observed. Compositional change around voids also occurred, which was confirmed using energy dispersive spectroscopy. Void formation and compositional change during repeated reversible switching can cause serious issues related to the reliability of NGST materials during actual phase-change random access memory device operations.",
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Effects of nitrogen on endurance of N-doped Ge2Sb 2Te5 films during laser-induced reversible switching. / Do, Kihoon; Lee, Dokyu; Ko, Dae Hong; Sohn, Hyunchul; Cho, Mann Ho.

In: Journal of the Electrochemical Society, Vol. 158, No. 4, 29.04.2011, p. H390-H393.

Research output: Contribution to journalArticle

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AU - Do, Kihoon

AU - Lee, Dokyu

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AU - Cho, Mann Ho

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AB - Void formation and compositional change in nitrogen doped Ge 2Sb2Te5 (NGST) films during repeated phase transformations were examined. Stable reversible switching behavior between the crystalline and melt-quenched phase of NGST films containing 5 nitrogen was examined using laser irradiation on a nanosecond time scale. Transmission electron micrographs indicated that with repeated phase transformation, void formation and subsequent coalescing and movement to the top and bottom interfaces with "SiO"2 layers in NGST occurred in both amorphous and crystalline states. Moreover, void formation at the grain boundaries of crystalline NGST was clearly observed. Compositional change around voids also occurred, which was confirmed using energy dispersive spectroscopy. Void formation and compositional change during repeated reversible switching can cause serious issues related to the reliability of NGST materials during actual phase-change random access memory device operations.

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