Effects of N2+ ion implantation on phase transition in Ge 2 Sb2 Te5 films

Youngkuk Kim, J. H. Baeck, M. H. Cho, E. J. Jeong, D. H. Ko

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The phase transitions of Ge2 Sb2 Te5 (GST) films after bombardment with 40 keV N2+ ions were investigated. Comparing the nitrogen incorporated GST films with a pure GST film, the suppression of a crystalline grain growth was more effective in the N2+ implanted GST film than in a nitrogen codeposited GST film, i.e., x-ray diffraction data showed that the intensities of the crystalline diffraction peaks were decreased and the full widths at half maximum were broader than that of a pure GST film. This suppression of crystallization owing to the incorporation of nitrogen drastically reduced the roughness of surface morphology and decreased the electrical conductivity of the crystalline film. A near edge x-ray absorption fine structure experiment and x-ray photoemission spectroscopy data demonstrated that the suppression of crystalline grain growth is due to the formation of Ge3 N4 and interstitial N2 molecules. In N2+ implanted GST films, in particular, interstitial N2 molecules played a major role in the suppression of crystallization.

Original languageEnglish
Article number083502
JournalJournal of Applied Physics
Volume100
Issue number8
DOIs
Publication statusPublished - 2006 Nov 7

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ion implantation
retarding
nitrogen
interstitials
crystallization
x ray absorption
bombardment
molecules
x ray diffraction
photoelectric emission
roughness
fine structure
electrical resistivity
diffraction
spectroscopy
ions
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "The phase transitions of Ge2 Sb2 Te5 (GST) films after bombardment with 40 keV N2+ ions were investigated. Comparing the nitrogen incorporated GST films with a pure GST film, the suppression of a crystalline grain growth was more effective in the N2+ implanted GST film than in a nitrogen codeposited GST film, i.e., x-ray diffraction data showed that the intensities of the crystalline diffraction peaks were decreased and the full widths at half maximum were broader than that of a pure GST film. This suppression of crystallization owing to the incorporation of nitrogen drastically reduced the roughness of surface morphology and decreased the electrical conductivity of the crystalline film. A near edge x-ray absorption fine structure experiment and x-ray photoemission spectroscopy data demonstrated that the suppression of crystalline grain growth is due to the formation of Ge3 N4 and interstitial N2 molecules. In N2+ implanted GST films, in particular, interstitial N2 molecules played a major role in the suppression of crystallization.",
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Effects of N2+ ion implantation on phase transition in Ge 2 Sb2 Te5 films. / Kim, Youngkuk; Baeck, J. H.; Cho, M. H.; Jeong, E. J.; Ko, D. H.

In: Journal of Applied Physics, Vol. 100, No. 8, 083502, 07.11.2006.

Research output: Contribution to journalArticle

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AU - Kim, Youngkuk

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AB - The phase transitions of Ge2 Sb2 Te5 (GST) films after bombardment with 40 keV N2+ ions were investigated. Comparing the nitrogen incorporated GST films with a pure GST film, the suppression of a crystalline grain growth was more effective in the N2+ implanted GST film than in a nitrogen codeposited GST film, i.e., x-ray diffraction data showed that the intensities of the crystalline diffraction peaks were decreased and the full widths at half maximum were broader than that of a pure GST film. This suppression of crystallization owing to the incorporation of nitrogen drastically reduced the roughness of surface morphology and decreased the electrical conductivity of the crystalline film. A near edge x-ray absorption fine structure experiment and x-ray photoemission spectroscopy data demonstrated that the suppression of crystalline grain growth is due to the formation of Ge3 N4 and interstitial N2 molecules. In N2+ implanted GST films, in particular, interstitial N2 molecules played a major role in the suppression of crystallization.

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