Effects of O2 plasma treatment on low temperature solution-processed zinc tin oxide thin film transistors

Jeong Soo Lee, Seung Min Song, Yong Hoon Kim, Jang Yeon Kwon, Min Koo Han

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The electrical characteristics such as threshold voltage, saturation mobility, and electrical reliability of low temperature (350 °C) solution-processed zinc tin oxide (ZTO) thin film transistors (TFTs) were improved considerably by employing O2 plasma treatment. O2 plasma treatment was performed by plasma asher and causes preferential dissociation of weak halide-related bonding such as Cl bonding by ion bombardment. After O2 plasma treatment, the threshold voltage decreased from 25.0 to 10.7 V because of an increase in electron concentration due to the reduction of Cl bonding and simultaneous composition of O-related bonding. The saturation mobility was increased from 0.09 to 0.58 cm2 V-1 s-1 because of the increase in electron concentration and reduction of the halide residues such as Cl atoms acting as trap states by employing O2 plasma treatment. Moreover, the electrical reliability such as threshold voltage shift was improved from 5.34 to 3.23 V for positive gate bias-stress because O2 plasma reduced the halide residues such as Cl atoms acting as trap states.

Original languageEnglish
Pages (from-to)1745-1749
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume210
Issue number9
DOIs
Publication statusPublished - 2013 Sep 1

Fingerprint

Thin film transistors
Zinc oxide
Tin oxides
zinc oxides
tin oxides
Oxide films
transistors
Plasmas
thin films
Threshold voltage
threshold voltage
halides
Temperature
traps
saturation
Atoms
Electrons
Ion bombardment
atoms
stannic oxide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "The electrical characteristics such as threshold voltage, saturation mobility, and electrical reliability of low temperature (350 °C) solution-processed zinc tin oxide (ZTO) thin film transistors (TFTs) were improved considerably by employing O2 plasma treatment. O2 plasma treatment was performed by plasma asher and causes preferential dissociation of weak halide-related bonding such as Cl bonding by ion bombardment. After O2 plasma treatment, the threshold voltage decreased from 25.0 to 10.7 V because of an increase in electron concentration due to the reduction of Cl bonding and simultaneous composition of O-related bonding. The saturation mobility was increased from 0.09 to 0.58 cm2 V-1 s-1 because of the increase in electron concentration and reduction of the halide residues such as Cl atoms acting as trap states by employing O2 plasma treatment. Moreover, the electrical reliability such as threshold voltage shift was improved from 5.34 to 3.23 V for positive gate bias-stress because O2 plasma reduced the halide residues such as Cl atoms acting as trap states.",
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Effects of O2 plasma treatment on low temperature solution-processed zinc tin oxide thin film transistors. / Lee, Jeong Soo; Song, Seung Min; Kim, Yong Hoon; Kwon, Jang Yeon; Han, Min Koo.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 210, No. 9, 01.09.2013, p. 1745-1749.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of O2 plasma treatment on low temperature solution-processed zinc tin oxide thin film transistors

AU - Lee, Jeong Soo

AU - Song, Seung Min

AU - Kim, Yong Hoon

AU - Kwon, Jang Yeon

AU - Han, Min Koo

PY - 2013/9/1

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AB - The electrical characteristics such as threshold voltage, saturation mobility, and electrical reliability of low temperature (350 °C) solution-processed zinc tin oxide (ZTO) thin film transistors (TFTs) were improved considerably by employing O2 plasma treatment. O2 plasma treatment was performed by plasma asher and causes preferential dissociation of weak halide-related bonding such as Cl bonding by ion bombardment. After O2 plasma treatment, the threshold voltage decreased from 25.0 to 10.7 V because of an increase in electron concentration due to the reduction of Cl bonding and simultaneous composition of O-related bonding. The saturation mobility was increased from 0.09 to 0.58 cm2 V-1 s-1 because of the increase in electron concentration and reduction of the halide residues such as Cl atoms acting as trap states by employing O2 plasma treatment. Moreover, the electrical reliability such as threshold voltage shift was improved from 5.34 to 3.23 V for positive gate bias-stress because O2 plasma reduced the halide residues such as Cl atoms acting as trap states.

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