Effects of oxygen concentration on the properties of Al-doped ZnO transparent conductive films deposited by pulsed DC magnetron sputtering

Doo Soo Kim, Ji Hyeon Park, Su Jeong Lee, Kyung Jun Ahn, Mi So Lee, Moon Ho Ham, Woong Lee, Jae Min Myoung

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The effect of oxygen concentration on the properties of Al-doped ZnO (AZO) transparent conductive films has been investigated on the films deposited by pulsed DC magnetron sputtering using a cylindrical ZnO target containing 2 wt% Al. AZO films were deposited at 230 °C to the thickness of about 1000 nm and the oxygen concentration was controlled by varying the O2/Ar supply ratio from 0 to 0.167. With the increasing O2/Ar ratio, crystallinity of the AZO films deteriorated while the film surface became smooth. Accompanying this, electrical properties also deteriorated significantly. When the O2/Ar ratios were 0 and 0.033, the AZO films showed metallic conduction behavior with the electrical resistivity in the mid 10-4 Ω cm range. However, when the ratios were 0.100 and 0.167, the films showed poor electrical conduction behavior similar to semiconductors as deduced from the transmittance behavior. Spectroscopic analysis showed that such deteriorating properties are due to the formation of condensed oxide group through the reaction between excess oxygen and dopant aluminum.

Original languageEnglish
Pages (from-to)997-1001
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume16
Issue number3
DOIs
Publication statusPublished - 2013 Jun

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Effects of oxygen concentration on the properties of Al-doped ZnO transparent conductive films deposited by pulsed DC magnetron sputtering'. Together they form a unique fingerprint.

  • Cite this