Effects of oxygen concentration on the properties of Al-doped ZnO transparent conductive films deposited by pulsed DC magnetron sputtering

Doo Soo Kim, Ji Hyeon Park, Su Jeong Lee, Kyung Jun Ahn, Mi So Lee, Moon Ho Ham, Woong Lee, Jae Min Myoung

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The effect of oxygen concentration on the properties of Al-doped ZnO (AZO) transparent conductive films has been investigated on the films deposited by pulsed DC magnetron sputtering using a cylindrical ZnO target containing 2 wt% Al. AZO films were deposited at 230 °C to the thickness of about 1000 nm and the oxygen concentration was controlled by varying the O2/Ar supply ratio from 0 to 0.167. With the increasing O2/Ar ratio, crystallinity of the AZO films deteriorated while the film surface became smooth. Accompanying this, electrical properties also deteriorated significantly. When the O2/Ar ratios were 0 and 0.033, the AZO films showed metallic conduction behavior with the electrical resistivity in the mid 10-4 Ω cm range. However, when the ratios were 0.100 and 0.167, the films showed poor electrical conduction behavior similar to semiconductors as deduced from the transmittance behavior. Spectroscopic analysis showed that such deteriorating properties are due to the formation of condensed oxide group through the reaction between excess oxygen and dopant aluminum.

Original languageEnglish
Pages (from-to)997-1001
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume16
Issue number3
DOIs
Publication statusPublished - 2013 Jun 1

Fingerprint

Conductive films
Magnetron sputtering
magnetron sputtering
direct current
Oxygen
oxygen
Metallic films
Spectroscopic analysis
Aluminum
Oxides
conduction
Electric properties
spectroscopic analysis
Doping (additives)
Semiconductor materials
crystallinity
transmittance
electrical properties
aluminum
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kim, Doo Soo ; Park, Ji Hyeon ; Lee, Su Jeong ; Ahn, Kyung Jun ; Lee, Mi So ; Ham, Moon Ho ; Lee, Woong ; Myoung, Jae Min. / Effects of oxygen concentration on the properties of Al-doped ZnO transparent conductive films deposited by pulsed DC magnetron sputtering. In: Materials Science in Semiconductor Processing. 2013 ; Vol. 16, No. 3. pp. 997-1001.
@article{de4a6b8f8a6c4baa88759b065a8433a6,
title = "Effects of oxygen concentration on the properties of Al-doped ZnO transparent conductive films deposited by pulsed DC magnetron sputtering",
abstract = "The effect of oxygen concentration on the properties of Al-doped ZnO (AZO) transparent conductive films has been investigated on the films deposited by pulsed DC magnetron sputtering using a cylindrical ZnO target containing 2 wt{\%} Al. AZO films were deposited at 230 °C to the thickness of about 1000 nm and the oxygen concentration was controlled by varying the O2/Ar supply ratio from 0 to 0.167. With the increasing O2/Ar ratio, crystallinity of the AZO films deteriorated while the film surface became smooth. Accompanying this, electrical properties also deteriorated significantly. When the O2/Ar ratios were 0 and 0.033, the AZO films showed metallic conduction behavior with the electrical resistivity in the mid 10-4 Ω cm range. However, when the ratios were 0.100 and 0.167, the films showed poor electrical conduction behavior similar to semiconductors as deduced from the transmittance behavior. Spectroscopic analysis showed that such deteriorating properties are due to the formation of condensed oxide group through the reaction between excess oxygen and dopant aluminum.",
author = "Kim, {Doo Soo} and Park, {Ji Hyeon} and Lee, {Su Jeong} and Ahn, {Kyung Jun} and Lee, {Mi So} and Ham, {Moon Ho} and Woong Lee and Myoung, {Jae Min}",
year = "2013",
month = "6",
day = "1",
doi = "10.1016/j.mssp.2013.02.012",
language = "English",
volume = "16",
pages = "997--1001",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Limited",
number = "3",

}

Effects of oxygen concentration on the properties of Al-doped ZnO transparent conductive films deposited by pulsed DC magnetron sputtering. / Kim, Doo Soo; Park, Ji Hyeon; Lee, Su Jeong; Ahn, Kyung Jun; Lee, Mi So; Ham, Moon Ho; Lee, Woong; Myoung, Jae Min.

In: Materials Science in Semiconductor Processing, Vol. 16, No. 3, 01.06.2013, p. 997-1001.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of oxygen concentration on the properties of Al-doped ZnO transparent conductive films deposited by pulsed DC magnetron sputtering

AU - Kim, Doo Soo

AU - Park, Ji Hyeon

AU - Lee, Su Jeong

AU - Ahn, Kyung Jun

AU - Lee, Mi So

AU - Ham, Moon Ho

AU - Lee, Woong

AU - Myoung, Jae Min

PY - 2013/6/1

Y1 - 2013/6/1

N2 - The effect of oxygen concentration on the properties of Al-doped ZnO (AZO) transparent conductive films has been investigated on the films deposited by pulsed DC magnetron sputtering using a cylindrical ZnO target containing 2 wt% Al. AZO films were deposited at 230 °C to the thickness of about 1000 nm and the oxygen concentration was controlled by varying the O2/Ar supply ratio from 0 to 0.167. With the increasing O2/Ar ratio, crystallinity of the AZO films deteriorated while the film surface became smooth. Accompanying this, electrical properties also deteriorated significantly. When the O2/Ar ratios were 0 and 0.033, the AZO films showed metallic conduction behavior with the electrical resistivity in the mid 10-4 Ω cm range. However, when the ratios were 0.100 and 0.167, the films showed poor electrical conduction behavior similar to semiconductors as deduced from the transmittance behavior. Spectroscopic analysis showed that such deteriorating properties are due to the formation of condensed oxide group through the reaction between excess oxygen and dopant aluminum.

AB - The effect of oxygen concentration on the properties of Al-doped ZnO (AZO) transparent conductive films has been investigated on the films deposited by pulsed DC magnetron sputtering using a cylindrical ZnO target containing 2 wt% Al. AZO films were deposited at 230 °C to the thickness of about 1000 nm and the oxygen concentration was controlled by varying the O2/Ar supply ratio from 0 to 0.167. With the increasing O2/Ar ratio, crystallinity of the AZO films deteriorated while the film surface became smooth. Accompanying this, electrical properties also deteriorated significantly. When the O2/Ar ratios were 0 and 0.033, the AZO films showed metallic conduction behavior with the electrical resistivity in the mid 10-4 Ω cm range. However, when the ratios were 0.100 and 0.167, the films showed poor electrical conduction behavior similar to semiconductors as deduced from the transmittance behavior. Spectroscopic analysis showed that such deteriorating properties are due to the formation of condensed oxide group through the reaction between excess oxygen and dopant aluminum.

UR - http://www.scopus.com/inward/record.url?scp=84877577787&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877577787&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2013.02.012

DO - 10.1016/j.mssp.2013.02.012

M3 - Article

AN - SCOPUS:84877577787

VL - 16

SP - 997

EP - 1001

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 3

ER -