Effects of oxygen-flow rate on the characteristics of the ZrO2 dielectric layers grown by metalorganic molecular beam epitaxy

Jang Hyuk Hong, Woo Jong Choi, Doo Soo Kim, Jae Min Myoung

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

ZrO2 dielectric layer grown on the p-type Si substrate by MOMBE method was characterized. A large portion of the layer was composed of a polycrystalline structure. After annealing at 800°C in a N2 ambient, the crystallinity was enhanced slightly. The crystalline structure was identified as a mixture of monoclinic and tetragonal structures. As the O2/Ar flow ratio increased, a sharper drop at the depletion region and a flatband voltage shift in the C-V curves were observed. The calculated dielectric constant of the ZrO2 layer was lower than the expected value and the high leakage current density was measured.

Original languageEnglish
Pages (from-to)2105-2108
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number5
Publication statusPublished - 2003 Sep 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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