Effects of oxygen-flow rate on the characteristics of the ZrO2 dielectric layers grown by metalorganic molecular beam epitaxy

Jang Hyuk Hong, Woo Jong Choi, Doo Soo Kim, Jae Min Myoung

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

ZrO2 dielectric layer grown on the p-type Si substrate by MOMBE method was characterized. A large portion of the layer was composed of a polycrystalline structure. After annealing at 800°C in a N2 ambient, the crystallinity was enhanced slightly. The crystalline structure was identified as a mixture of monoclinic and tetragonal structures. As the O2/Ar flow ratio increased, a sharper drop at the depletion region and a flatband voltage shift in the C-V curves were observed. The calculated dielectric constant of the ZrO2 layer was lower than the expected value and the high leakage current density was measured.

Original languageEnglish
Pages (from-to)2105-2108
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number5
Publication statusPublished - 2003 Sep 1

Fingerprint

Molecular beam epitaxy
Leakage currents
Permittivity
Current density
molecular beam epitaxy
flow velocity
Flow rate
Annealing
Crystalline materials
Oxygen
Electric potential
oxygen
Substrates
crystallinity
depletion
leakage
permittivity
current density
annealing
shift

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{b2487d71f30a4bb3a2e18921f2959b53,
title = "Effects of oxygen-flow rate on the characteristics of the ZrO2 dielectric layers grown by metalorganic molecular beam epitaxy",
abstract = "ZrO2 dielectric layer grown on the p-type Si substrate by MOMBE method was characterized. A large portion of the layer was composed of a polycrystalline structure. After annealing at 800°C in a N2 ambient, the crystallinity was enhanced slightly. The crystalline structure was identified as a mixture of monoclinic and tetragonal structures. As the O2/Ar flow ratio increased, a sharper drop at the depletion region and a flatband voltage shift in the C-V curves were observed. The calculated dielectric constant of the ZrO2 layer was lower than the expected value and the high leakage current density was measured.",
author = "Hong, {Jang Hyuk} and Choi, {Woo Jong} and Kim, {Doo Soo} and Myoung, {Jae Min}",
year = "2003",
month = "9",
day = "1",
language = "English",
volume = "21",
pages = "2105--2108",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
number = "5",

}

TY - JOUR

T1 - Effects of oxygen-flow rate on the characteristics of the ZrO2 dielectric layers grown by metalorganic molecular beam epitaxy

AU - Hong, Jang Hyuk

AU - Choi, Woo Jong

AU - Kim, Doo Soo

AU - Myoung, Jae Min

PY - 2003/9/1

Y1 - 2003/9/1

N2 - ZrO2 dielectric layer grown on the p-type Si substrate by MOMBE method was characterized. A large portion of the layer was composed of a polycrystalline structure. After annealing at 800°C in a N2 ambient, the crystallinity was enhanced slightly. The crystalline structure was identified as a mixture of monoclinic and tetragonal structures. As the O2/Ar flow ratio increased, a sharper drop at the depletion region and a flatband voltage shift in the C-V curves were observed. The calculated dielectric constant of the ZrO2 layer was lower than the expected value and the high leakage current density was measured.

AB - ZrO2 dielectric layer grown on the p-type Si substrate by MOMBE method was characterized. A large portion of the layer was composed of a polycrystalline structure. After annealing at 800°C in a N2 ambient, the crystallinity was enhanced slightly. The crystalline structure was identified as a mixture of monoclinic and tetragonal structures. As the O2/Ar flow ratio increased, a sharper drop at the depletion region and a flatband voltage shift in the C-V curves were observed. The calculated dielectric constant of the ZrO2 layer was lower than the expected value and the high leakage current density was measured.

UR - http://www.scopus.com/inward/record.url?scp=0242593764&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242593764&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0242593764

VL - 21

SP - 2105

EP - 2108

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 5

ER -