ZrO2 dielectric layer grown on the p-type Si substrate by MOMBE method was characterized. A large portion of the layer was composed of a polycrystalline structure. After annealing at 800°C in a N2 ambient, the crystallinity was enhanced slightly. The crystalline structure was identified as a mixture of monoclinic and tetragonal structures. As the O2/Ar flow ratio increased, a sharper drop at the depletion region and a flatband voltage shift in the C-V curves were observed. The calculated dielectric constant of the ZrO2 layer was lower than the expected value and the high leakage current density was measured.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2003 Sep 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering